Results 111 to 120 of about 137,897 (277)
Novel Optical Functionalities in Memristors
We present a tunnel junction memristor with expanded optical functionalities enabled by the integration of an ultra‐thin CdS barrier and a top ITO electrode. UV illumination triggers a photovoltaic response that can sense the memristor state. At very low temperatures, the UV light generates a high injection of photocarriers and produces a volatile ...
Isabel Tenreiro +6 more
wiley +1 more source
A High-Power 170 GHz in-Phase Power-Combing Frequency Doubler Based on Schottky Diodes. [PDF]
Wang L, Zhang D, Meng J, Zhu H.
europepmc +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Nanocrystalline ZnSnN2 Prepared by Reactive Sputtering, Its Schottky Diodes and Heterojunction Solar Cells. [PDF]
Ye F +6 more
europepmc +1 more source
Fabrication of Schottky diodes for terahertz imaging
In this paper we present design, fabrication and characterization of Schottky terahertz diodes. The diode is based on a Ti/n-GaAs junction with very low junction capacitance.
M. Ortolani +6 more
core +1 more source
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada +11 more
wiley +1 more source
Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN). [PDF]
Georgiadou DG +4 more
europepmc +1 more source
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink +6 more
wiley +1 more source
Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes. [PDF]
Wendel P +3 more
europepmc +1 more source
Electrical characterization of Ag/p-GaSe:Gd schottky barrier diodes
Some parameters of Ag/p-GaSe:Gd Schottky barrier diodes have been investigated by means of current-voltage and capacitance-voltage measurements at room temperature.
Dogan, S. +3 more
core +1 more source

