Results 111 to 120 of about 10,859 (269)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

A Current Transport Mechanism on the Surface of Pd-SiO2 Mixture for Metal-Semiconductor-Metal GaAs Diodes

open access: yesAdvances in Materials Science and Engineering, 2013
This paper presents a current transport mechanism of Pd metal-semiconductor-metal (MSM) GaAs diodes with a Schottky contact material formed by intentionally mixing SiO2 into a Pd metal.
Shih-Wei Tan, Shih-Wen Lai
doaj   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink   +6 more
wiley   +1 more source

High‐Performance Solar‐Blind Photodetectors Enabled by Post‐Annealing Optimization of Solution‐Processed Ga2O3 Films

open access: yesAdvanced Electronic Materials, EarlyView.
Post‐annealing atmosphere and temperature are optimized to regulate oxygen‐related defect states in solution‐processed Ga2O3 films. The optimized H2/N2 annealing enables enhanced photoconductive gain while maintaining low dark current, leading to high‐performance solar‐blind photodetectors with a responsivity of 7.5 × 102 A W−1 under 254 nm ...
Shiqi Yan   +10 more
wiley   +1 more source

GaP Schottky diodes for high temperature applications [PDF]

open access: yes, 1981
A need for high temperature electronic components has been established. In an effort to meet part of this need four metals have been evaluated for use in fabricating a Schottky barrier diode. Schottky diodes made from Pt, Cr, Al and Ni were aged for 1000
Coquat, J. A.   +2 more
core  

Parallel and interleaved structures for diamond Schottky diodes [PDF]

open access: yes, 2017
International audienceIn the recent years, diamond Schottky diodes with high Figures of Merit have been demonstrated. Static and dynamic characteristics of diamond Schottky diodes are presented in this paper.
Lefranc, Pierre   +4 more
core   +2 more sources

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

open access: yesAdvanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti   +6 more
wiley   +1 more source

Structure and Spectroscopic Characterisation of Phenanthroline‐Based Iodobismuthate(III) Complexes Utilised for Raw Acoustic Signal Classification

open access: yesAdvanced Intelligent Discovery, EarlyView.
Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz   +4 more
wiley   +1 more source

Carbon/Silicon Heterojunction Solar Cells: Status and Perspectives

open access: yesCarbon Energy, EarlyView.
This review examines carbon/silicon heterojunctions and highlights the advantages of carbon materials in terms of cost‐effectiveness, low‐temperature processing, and scalability. It adopts a comprehensive approach to bridge the gap between laboratory‐scale innovations and industrial‐scale applications, incorporating current state‐of‐the‐art findings ...
Randi Azmi   +6 more
wiley   +1 more source

4H-SiC Schottky diodes with high on/off current ratio [PDF]

open access: yes, 2001
4H-SiC Schottky diodes having a main titanium contact surrounded by a narrow ring-shaped nickel contact have been fabricated. The diodes display low reverse leakage currents, corresponding to those observed in nickel Schottky contacts, and low forward ...
Wright NG   +4 more
core  

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