Results 111 to 120 of about 10,847 (275)

Carbon-Nanotube Schottky Diodes

, 2006
Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources.
Wong, Eric, Schlecht, Erich, Siegel, Peter, Hunt, Brian, Manohara, Harish   +4 more
core  

2D Materials Empowered Radar Absorbing Materials: A Review

Advanced Electronic Materials, EarlyView.
Recent progress in 2D materials empowered radar absorbing materials (RAMs) is reviewed, highlighting four key structural design strategies that enhance electromagnetic wave absorption. Porous structures, heterogeneous interfaces, printed metamaterials, and tunable metasurfaces are compared in terms of their governing physics, fabrication complexity ...
Yujie Zhong, Shuncong Zhong, Yi Huang, Shan‐Tung Tu, Minghong Wu   +4 more
wiley   +1 more source

GaP Schottky diodes for high temperature applications [PDF]

, 1981
A need for high temperature electronic components has been established. In an effort to meet part of this need four metals have been evaluated for use in fabricating a Schottky barrier diode. Schottky diodes made from Pt, Cr, Al and Ni were aged for 1000
Coquat, J. A., Eknoyan, O., Weichold, M. H.   +2 more
core  

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

Molecular Design and Interfacial Functions of Self‐Assembled Monolayers for Perovskite and Tandem Solar Cells

Advanced Energy Materials, EarlyView.
We identify two decisive levers for SAM interfaces: molecular design (carboxylic acid‐based, phosphonic acid, other anchoring chemistries, and polymeric SAMs) and mixing routes (co‐assembly, in situ assembly, pre‐ and post‐treatment). Coordinated tuning of headgroups and assembly pathways optimises energy alignment and film formation, suppresses ...
Jiaxu Zhang, Bochun Kang, Feng Yan
wiley   +1 more source

Structure and Spectroscopic Characterisation of Phenanthroline‐Based Iodobismuthate(III) Complexes Utilised for Raw Acoustic Signal Classification

Advanced Intelligent Discovery, EarlyView.
Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz, Gisya Abdi, Andrzej Sławek, Marlena Gryl, Konrad Szaciłowski   +4 more
wiley   +1 more source

Experimental investigation of traps in THz Schottky diodes

, 2016
In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested.
Subash Khanal, Juha Mallat, Piironen, Petri, Khanal, Subash, Tero Kiuru, Kiuru, Tero, Räisänen, Antti V., Petri Piironen, Antti. V. Raisanen, Mallat, Juha, Seppä, Heikki, Heikki Seppa   +11 more
core   +1 more source

A High-Power 170 GHz in-Phase Power-Combing Frequency Doubler Based on Schottky Diodes. [PDF]

Micromachines (Basel), 2023
Wang L, Zhang D, Meng J, Zhu H.
europepmc   +1 more source

High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact

Applied Physics Express
β-Ga _2 O _3 power diodes were expected to possess low turn-on voltage ( V _on ), low reverse leakage ( J _R ), and high blocking capability for low power losses. In this work, a low V _on (0.48 V) β-Ga _2 O _3 heterojunction barrier Schottky diode (HJBS)
Qiuyan Li, Weibing Hao, Jinyang Liu, Zhao Han, Song He, Xuanze Zhou, Guangwei Xu, Shibing Long   +7 more
doaj   +1 more source

Nanocrystalline ZnSnN₂ Prepared by Reactive Sputtering, Its Schottky Diodes and Heterojunction Solar Cells. [PDF]

Nanomaterials (Basel), 2022
Ye F, Hong RT, Qiu YB, Xie YZ, Zhang DP, Fan P, Cai XM.   +6 more
europepmc   +1 more source