Results 61 to 70 of about 10,859 (269)

Space-charge-limited currents in GaN Schottky diodes [PDF]

, 2005
Unusual dark current voltage (I-V) characteristics were observed in GaN Schottky diodes. I-V characteristics of the GaN Schottky diodes were measured down to the magnitude of 10(-14) A.
Yang H, Hu ZF, Zhao DG, Shen, XM, Tongji Univ, Inst Semicond & Informat Technol, 1239 Siping Rd, Shanghai 200092, Peoples R China. 电子邮箱地址: xmshen@mail.tongji.edu.cn, Shen XM, Liang JW, Liu ZS   +6 more
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Fabrication of Schottky diodes for terahertz imaging [PDF]

, 2011
In this paper we present design, fabrication and characterization of Schottky terahertz diodes. The diode is based on a Ti/n-GaAs junction with very low junction capacitance.
M. Ortolani, A. Notargiacomo, V. Foglietti, E. Giovine, D. Dominijanni, R. Casini, ORTOLANI, MICHELE   +6 more
core   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

ESD Behavior of AlGaN/GaN Schottky Diodes [PDF]

, 2019
This experimental study reports behavior of Ni/Au-based AlGaN/GaN Schottky diodes under ESD conditions. A comparative study of diodes with/without recessed Schottky contact unfolds different degradation physics in each case.
Shrivastava, Mayank, Raghavan, Srinivasan, Gupta, Sayak Dutta, Shankar, Bhawani, Soni, Ankit   +4 more
core   +1 more source

Turning Humidity Into Function: Heterojunction Interfaces for Dual‐Mode Removal of Nonpolar Vapors

Advanced Materials Interfaces, EarlyView.
A wire‐grown MIL–88B(Fe)@Fe3(PO4)2 heterojunction converts ambient humidity into a functional mediator for nonpolar VOC purification. Water forms a hydration layer that enhances cyclohexane uptake while simultaneously promoting •OH generation, resulting in synergistic adsorption–photocatalysis under humid conditions.
Jinwook Lee, Jooyoun Kim
wiley   +1 more source

Electrical characterization of Ag/p-GaSe:Gd schottky barrier diodes [PDF]

, 2010
Some parameters of Ag/p-GaSe:Gd Schottky barrier diodes have been investigated by means of current-voltage and capacitance-voltage measurements at room temperature.
Dogan, S., Gurbulak, Bekir, Duman, S., Tekle, T. Bahtiyari   +3 more
core   +1 more source

Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface

Advanced Materials Interfaces, EarlyView.
This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu, Tsung‐Han Tsai, Qingxiao Wang, Haicheng Cao, Jie Zhou, You Jin Koo, Chenyu Wang, Yang Liu, Yuyue Hao, Michael Eller, Connor Bailey, Stephanie Liu, Nicholas J. Tanen, Zhiyuan Liu, Mingtao Nong, Robert M. Jacobberger, Tien Khee Ng, Katherine Fountaine, Vincent Gambin, Boon S. Ooi, Xiaohang Li, Zhenqiang Ma   +21 more
wiley   +1 more source

Graphene-Silicon Schottky Diodes [PDF]

, 2016
We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current–voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type ...
Stephen B. Cronin (1467643), Mehmet Aykol (1809052), A. F. J. Levi (2201497), Chun-Chung Chen (1587412), Chia-Chi Chang (1949149)   +4 more
core   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes [PDF]

, 2008
Pt/AlGaN/AIN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed
Wang, XH, Wang, JX, Wang, XH, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: wxh@mail.semi.ac.cn, Ran, JX, Wang, CM, Wang, BZ, Xiao, HL, Wang, XL, Feng, C, Yang, CB   +9 more
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