Results 61 to 70 of about 137,897 (277)

Arithmetic Logic Unit Circuit Based on Zinc Oxide Nanogap Schottky Diodes

Advanced Electronic Materials
The intrinsic high non‐linearity of Schottky diodes with the latest improvements in performance, material, and design novelties have made them invaluable in the emerging devices ecosystem.
Zhanibek Bizak, Harold F. Mazo‐Mantilla, Linqu Luo, Camelia Florica, Georgian Melinte, Thomas D. Anthopoulos, Khaled N. Salama   +6 more
doaj   +1 more source

Recent Advances in Light‐Addressable Electrochemistry for Spatially Resolved Applications

Advanced Materials Technologies, EarlyView.
This comprehensive review highlights light‐addressable electrochemistry as a powerful tool that uses light to control localized chemical reactions on unstructured semiconductor surfaces. The work evaluates advanced strategies to optimize electrode materials for enhanced spatial resolution and stability. Furthermore, it showcases diverse applications in
Nhi Trang Vo, Sina Jamali, Nam‐Trung Nguyen   +2 more
wiley   +1 more source

SiC Schottky Diodes and Polyphase Buck Converters [PDF]

, 2007
The turn-on characteristics of a SiC Schottky diode are analyzed theoretically, by simulation, and by experiment. The static characteristics of SiC Schottky diodes and Si junction diodes are analyzed for normal and high temperatures.
Galigekere, Veda Prakash N.
core   +2 more sources

Electrically Reconfigurable Optical Initialization of Spin Valley Polarization in Monolayer WS2 Enabled by Switchable Dual‐Mode Liquid Crystal Lasers

Advanced Optical Materials, EarlyView.
This work presents an electrically controllable approach to spin–valley polarization in monolayer WS2 by integrating it with a dual‐mode liquid crystal laser. Applying an external field triggers phase transitions that switch the laser emission between helicity‐defined band‐edge lasing and unpolarized random lasing.
Yu‐Chuan Tsao, Ya‐Ping Hsieh, Yang‐Fang Chen, Hui‐Yu Chen   +3 more
wiley   +1 more source

Improving the reliability of Schottky diodes under the influence of electrostatic discharges [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012
Experimental studies of Schottky diodes with molybdenum barrier structure showed that resistance of the structures to electrostatic discharge depends on the design parameters, as well as on guard ring diffusion depth.
Sоlоdukha V. A., Turtsevich A. S., Solov’yov J. A., Rubtsevich I. I., Kerentsev A. F.   +4 more
doaj   +2 more sources

Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP Advances, 2019
This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky ...
Ajay Kumar Visvkarma, Chandan Sharma, Robert Laishram, Sonalee Kapoor, D. S. Rawal, Seema Vinayak, Manoj Saxena   +6 more
doaj   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Charge recovery by vacuum annealing in β-Ga2O3 multi-fin trench Schottky barrier diodes [PDF]

APL Electronic Devices
In this work, we have demonstrated charge recovery in (001) β-Ga2O3 vertical structures after reactive ion etching. The charge recovery is achieved by annealing the etched structures under ultra-high vacuum.
Sushovan Dhara, Ashok Dheenan, Siddharth Rajan   +2 more
doaj   +1 more source

A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms

, 2020
We develop a complete compact model to describe the forward current, reverse current, and capacitance of SiC Schottky barrier diodes. The model is based on the fundamental current mechanisms of thermionic emission and tunneling, and is usable over a ...
Dimitrijev, Sima, Nicholls, Jordan R
core   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source