Results 61 to 70 of about 10,847 (275)
, 2017 This thesis work contributes to two fields of research: Schottky diode characterisation and dielectric material characterisation, both for millimeter wave and THz applications. Schottky diodes are characterised for their electrical, thermal, noise and RF
Khanal, Subash
core +1 more source
Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
Advances in Halide Perovskites for Photon Radiation Detectors
Advanced Materials Technologies, EarlyView.This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang +3 more
wiley +1 more source
Record Performance in Vertically Stacked, Solution‐Processed ZTO Schottky Diodes
Advanced Materials Technologies, EarlyView.Schottky diodes based on solution processed sustainable zinc—tin–oxide thin films present an eco‐friendly and versatile alternative to conventional CMOS based technologies. Beyond state‐of‐the‐art performance for vertically stacked solution‐based oxide diodes was achieved, including rectification ratios exceeding nine orders of magnitude, and intrinsic
Carlos Silva +10 more
wiley +1 more source
, 2019 In this paper, we derive the equations for the current-voltage characteristics of SiC Schottky barrier diodes from the fundamental physics of thermionic emission and tunneling, as the two fundamental current mechanisms. An excellent fit between the model
J. Nicholls +7 more
core +1 more source
Advanced Materials Technologies, EarlyView.This work highlights the impact of incorporating graphene nanoflakes into precursor inks of MAPbBr3 for inkjet‐printed optoelectronic device applications. A substantial modification of the crystallization dynamics is reported despite miniscule concentrations.
Kenneth Lobo +12 more
wiley +1 more source
Arithmetic Logic Unit Circuit Based on Zinc Oxide Nanogap Schottky Diodes
Advanced Electronic MaterialsThe intrinsic high non‐linearity of Schottky diodes with the latest improvements in performance, material, and design novelties have made them invaluable in the emerging devices ecosystem.
Zhanibek Bizak +6 more
doaj +1 more source
Advanced Materials Technologies, EarlyView.An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi +7 more
wiley +1 more source
Fabrication of High‐Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS
Advanced Science, EarlyView.A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Ju Hee Mun +10 more
wiley +1 more source
Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors
AIP Advances, 2019 This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky ...
Ajay Kumar Visvkarma +6 more
doaj +1 more source