Results 41 to 50 of about 10,859 (269)
Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades +7 more
wiley +1 more source
Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications [PDF]
In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
core
Single‐Chromophore Homojunction Organic Solar Cells: A Path to Simplicity and Efficiency
This perspective discusses how the intrinsic optoelectronic properties of organic semiconductors, their molecular packing in the solid‐state, and internal energetic gradients within a device can enable free‐charge carrier generation in homojunction organic solar cells.
Shaun McAnally +2 more
wiley +1 more source
Comparison between 3.3kV 4H-SiC Schottky and bipolar diodes [PDF]
Silicon Carbide Schottky and bipolar diodes have been fabricated with a breakdown voltage of 3.3kV. Diodes have been packaged and measured up to 300°C.
J. Millan +15 more
core +1 more source
Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement
GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The thermal characteristics of GaN Schottky diodes with single and double-row anode arrangements are described in this paper.
Zenghui Liu +13 more
doaj +1 more source
Fabrication and characterization of optical float-zone (100) β-Ga2O3 Schottky diodes [PDF]
We conducted a rapid fabrication of Ga2O3 vertical Schottky barrier diodes using Ti/Au for ohmic contacts and Ni/Au for Schottky contacts on a (100) Sn-doped β-Ga2O3 grown by the optical float-zone method and analyzed the device characteristics and ...
Zubear Nowshad Pasha +7 more
doaj +1 more source
Graphene–Silicon Schottky Diodes for Photodetection [PDF]
5 pages, 9 ...
Di Bartolomeo, Antonio +4 more
openaire +2 more sources
n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis +19 more
wiley +1 more source
Analytical Theory of Thin-Film Schottky Diodes [PDF]
Thin-film electronics straddles the border between bulk electronics and the quantum realm. Though thin-film devices are increasingly prevalent, our understanding of their operation remains incomplete.
Zhang, Jiawei +2 more
core +3 more sources
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source

