Results 41 to 50 of about 137,897 (277)

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement

Micromachines
GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The thermal characteristics of GaN Schottky diodes with single and double-row anode arrangements are described in this paper.
Zenghui Liu, Xiaobo Zhang, Zhiwen Liang, Fengge Wang, Yanyan Xu, Xien Yang, Xin Li, Yisheng Liang, Lizhang Lin, Xiaodong Li, Wenbo Zhao, Xin Cao, Xinqiang Wang, Baijun Zhang   +13 more
doaj   +1 more source

Graphene–Silicon Schottky Diodes for Photodetection [PDF]

IEEE Transactions on Nanotechnology, 2018
5 pages, 9 ...
Di Bartolomeo, Antonio, Luongo, Giuseppe, Iemmo, Laura, Urban, Francesca, Giubileo, Filippo   +4 more
openaire   +2 more sources

Single‐Chromophore Homojunction Organic Solar Cells: A Path to Simplicity and Efficiency

Advanced Materials, EarlyView.
This perspective discusses how the intrinsic optoelectronic properties of organic semiconductors, their molecular packing in the solid‐state, and internal energetic gradients within a device can enable free‐charge carrier generation in homojunction organic solar cells.
Shaun McAnally, Paul L. Burn, Paul E. Shaw   +2 more
wiley   +1 more source

Fabrication and characterization of optical float-zone (100) β-Ga2O3 Schottky diodes [PDF]

AIP Advances
We conducted a rapid fabrication of Ga2O3 vertical Schottky barrier diodes using Ti/Au for ohmic contacts and Ni/Au for Schottky contacts on a (100) Sn-doped β-Ga2O3 grown by the optical float-zone method and analyzed the device characteristics and ...
Zubear Nowshad Pasha, Vijayakumar Subramanian, Ved Krishna, Konstantinos Floros, Ingo Ludtke, Shanthi Subashchandran, S. Ganesamoorthy, Naresh Gunasekar   +7 more
doaj   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

Advanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis, Filip Aniés, Yiyang Yu, Mohammed Ghadiyali, Hendrik Faber, Zhanibek Bizak, Youssef Kabri, Pavlos Tzourmpakis, Suman Mandal, Linqu Luo, Temur Maksudov, Mohamad Insan Nugraha, Harold F. Mazo‐Mantilla, Patrice Vanelle, Julie Broggi, Khaled N. Salama, Udo Schwingenschlögl, Martin Heeney, Atif Shamim, Thomas D. Anthopoulos   +19 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications [PDF]

Журнал нано- та електронної фізики, 2011
In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN.
Ashish Kumar, Seema Vinayak, R. Singh
doaj  

Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes

AIP Advances, 2017
Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes.
Tom N. Oder, Krishna C. Kundeti, Nicholas Borucki, Sundar B. Isukapati   +3 more
doaj   +1 more source

Dry etch damage anisotropy and damage mitigation using hot H3PO4 in (001) β-Ga2O3 Schottky diodes [PDF]

APL Electronic Devices
β-Ga2O3 is a promising ultra-wide bandgap semiconductor for power devices. Here, we report on the fabrication of Schottky barrier diodes on (001) β-Ga2O3 to investigate both dry etch damage anisotropy and damage mitigation using H3PO4.
Steve Rebollo, Wolfgang Buchmaier, Sriram Krishnamoorthy, James S. Speck   +3 more
doaj   +1 more source