Results 51 to 60 of about 174,851 (286)
A Universal van der Waals Tunneling Injector for Monolayer CMOS
Advanced Materials, EarlyView.A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho +17 more
wiley +1 more source
A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars
Crystals, 2022 In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance.
Rongyu Gao +6 more
doaj +1 more source
Schottky barrier light emitting diode in standard CMOS technology
, 2011 Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from673nm ...
Beiju Huang +12 more
core +1 more source
On‐Skin Wireless Vibratory Interfaces by Stretchable Multilayer Circuits
Advanced Materials Interfaces, EarlyView.A battery‐free, stretchable wireless vibratory interface is developed through printable liquid‐metal‐based multilayer circuits. The soft device integrates wireless power reception, signal modulation, and vibrotactile actuation within a compliant platform.
Jiawei Liu +10 more
wiley +1 more source
International Journal of Energetica, 2020 In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj
AIP Advances, 2015 This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface.
Arjun Shetty +6 more
doaj +1 more source
State-Space Modelling of Schottky Diode Rectifiers Including Parasitic and Coupling Effects up to the Terahertz Band [PDF]
A nonlinear state-space model for Schottky diode rectifiers is presented that incorporates junction dynamics, layout parasitic effects, and electromagnetic coupling effects.
Basherlou, Haleh Jahanbakhsh +5 more
core +1 more source
Advances in Halide Perovskites for Photon Radiation Detectors
Advanced Materials Technologies, EarlyView.This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang +3 more
wiley +1 more source
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
core +1 more source
Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics
Advanced Materials Technologies, EarlyView.In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald +3 more
wiley +1 more source