Results 51 to 60 of about 10,590 (276)
Electrically Coded Retinomorphic Spectrophotodetector
Advanced Materials, EarlyView.Self‐powered retinomorphic pyro‐photodetector is demonstrated that avoids machine‐learning post‐processing and covers 365–940 nm. Electrostatic balancing of built‐in potential produces an electrical wavelength code, delivering <3 nm wavelength decoding accuracy with ∼46 µs response.
Mohit Kumar, Hyunmin Dang, Hyungtak Seo
wiley +1 more source
Sensors, 2014 We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It
Farahiyah Mustafa, Abdul Manaf Hashim
doaj +1 more source
Advanced Materials, EarlyView.Ionic conjugated polyelectrolyte electron‐blocking layers enable photomultiplication organic photodetectors with dark current robustness up to −10 V and external quantum efficiencies exceeding 3000%. Fowler–Nordheim tunneling, interfacial dipole, trap density of states, and noise analyses reveal how ionic conjugated polyelectrolytes suppress electron ...
Yelim Kang +12 more
wiley +1 more source
Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts [PDF]
, 2005 A new measurement method for GaN films and their Schottky contacts is reported in this paper. Instead of the fabrication of Ohmic contacts, this measurement is based on a special back-to-back Schottky diode that has a rectifying character. A mathematical
Luo Q +6 more
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R&D of 3 300V SiC MOSFET With Embedded SBD
Zhongguo dianli, 2021 In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky ...
Guoyou LIU +3 more
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Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
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Pt/Nanostructured RuO2/SiC Schottky Diode Based Hydrogen Gas Sensors [PDF]
, 2011 In this paper, we report the development of novel Pt/nanostructured RuO2/SiC Schottky diode based sensors for hydrogen gas applications. The nanostructured ruthenium oxide thin films were deposited on SiC substrates using radio frequency sputtering ...
COMINI, Elisabetta +19 more
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A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars
Crystals, 2022 In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance.
Rongyu Gao +6 more
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Turning Humidity Into Function: Heterojunction Interfaces for Dual‐Mode Removal of Nonpolar Vapors
Advanced Materials Interfaces, EarlyView.A wire‐grown MIL–88B(Fe)@Fe3(PO4)2 heterojunction converts ambient humidity into a functional mediator for nonpolar VOC purification. Water forms a hydration layer that enhances cyclohexane uptake while simultaneously promoting •OH generation, resulting in synergistic adsorption–photocatalysis under humid conditions.
Jinwook Lee, Jooyoun Kim
wiley +1 more source
International Journal of Energetica, 2020 In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj