Results 61 to 70 of about 174,851 (286)
Compact high‐efficiency c‐band rectifier with high input power for microwave power transmission
This letter presents a novel C‐band rectifier that is capable of handling high input power. The rectifier consists of a Schottky diode, an impedance matching circuit with a compensation microstrip structure, and an output filter with harmonic suppression
Hongzheng Zeng, Yuzhu Tang, Yunpeng Liu
doaj +1 more source
Recent Advances in Light‐Addressable Electrochemistry for Spatially Resolved Applications
This comprehensive review highlights light‐addressable electrochemistry as a powerful tool that uses light to control localized chemical reactions on unstructured semiconductor surfaces. The work evaluates advanced strategies to optimize electrode materials for enhanced spatial resolution and stability. Furthermore, it showcases diverse applications in
Nhi Trang Vo +2 more
wiley +1 more source
Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes
In this paper, the development of two high power 220 GHz frequency triplers is proposed. The GaAs Schottky diodes with six nodes are applied to realize high efficiency 220 GHz tripler, while the application of GaN Schottky diodes with eight nodes is ...
Yilin Yang +6 more
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Pt/Nanograined ZnO/SiC Schottky diode based hydrogen and propene sensor
A nanostructured Schottky diode was fabricated to sense hydrogen and propene gases in the concentration range of 0.06% to 1%. The ZnO sensitive layer was deposited on SiC substrate by pulse laser deposition technique.
Kang, J.H. +13 more
core +1 more source
This work presents an electrically controllable approach to spin–valley polarization in monolayer WS2 by integrating it with a dual‐mode liquid crystal laser. Applying an external field triggers phase transitions that switch the laser emission between helicity‐defined band‐edge lasing and unpolarized random lasing.
Yu‐Chuan Tsao +3 more
wiley +1 more source
Simulation Based Analysis of Temperature Effect on Breakdown Voltage of Ion Implanted Co/n-Si Schottky Diode [PDF]
In semiconductor devices, breakdown voltage variation with temperature is a very significant study, since the reliability and performance of semiconductor devices especially depends upon the temperature.
Vibhor Kumar +3 more
doaj
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere.
Ivan Shtepliuk +5 more
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A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky Diodes
This paper describes the design and demonstration of a 135−190 GHz self-biased broadband frequency doubler based on planar Schottky diodes. Unlike traditional bias schemes, the diodes are biased in resistive mode by a self-bias resistor; thus, no ...
Chengkai Wu +5 more
doaj +1 more source
Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source

