Results 61 to 70 of about 10,590 (276)

Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

AIP Advances, 2015
This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface.
Arjun Shetty, Basanta Roul, Shruti Mukundan, Lokesh Mohan, Greeshma Chandan, K. J. Vinoy, S. B. Krupanidhi   +6 more
doaj   +1 more source

Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface

Advanced Materials Interfaces, EarlyView.
This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu, Tsung‐Han Tsai, Qingxiao Wang, Haicheng Cao, Jie Zhou, You Jin Koo, Chenyu Wang, Yang Liu, Yuyue Hao, Michael Eller, Connor Bailey, Stephanie Liu, Nicholas J. Tanen, Zhiyuan Liu, Mingtao Nong, Robert M. Jacobberger, Tien Khee Ng, Katherine Fountaine, Vincent Gambin, Boon S. Ooi, Xiaohang Li, Zhenqiang Ma   +21 more
wiley   +1 more source

Effect of CO on characteristics of AlGaN/GaN Schottky diode [PDF]

, 2008
Pt Schottky diode gas sensors for CO are fabricated using AlGaN/ GaN high electron mobility transistor ( HEMTs) structure. The diodes show a remarkable sensor signal (3 mA, in N-2; 2mA in air ambient) biased 2V after 1% CO is introduced at 50 degrees C ...
Hu, GX, Wang, JX, Wang, ZG, Feng, C, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: cfeng@semi.ac.cn, Zhang, ML, Jiang, LJ, Xiao, HL, Feng, C, Wang, XL, Yang, CB, Tang, J   +10 more
core  

Fabrication and electrical characterization of transparent ZnOx-based Schottky diode [PDF]

, 2020
En el presente trabajo se aborda la fabricación de microdiodos Schottky transparentes, realizando la unión de una película delgada de óxido de zinc (ZnOx) con una película delgada de óxido de indio dopado con estaño (ITO), la primera es usada como ...
ANGEL REGALADO CONTRERAS
core  

Reversed bias Pt/nanostructured ZnO Schottky diode with enhanced electric field for hydrogen sensing [PDF]

, 2010
In this paper, the effect of electric field enhancement on Pt/nanostructured ZnO Schottky diode based hydrogen sensors under reverse bias condition has been investigated.
COMINI, Elisabetta, Kalantar-zadeh, K., Comini, E., Ferroni, M., Wlodarski, W., Kalantar zadeh K., SBERVEGLIERI, Giorgio, Shafiei, M., Yu, J., Yu J., Arsat, R., Wlodarski W., FERRONI, Matteo, Shafiei M., Arsat R., Sberveglieri, G.   +15 more
core   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Power Schottky diode design and comparison with the junction diode [PDF]

, 1971
Because the Schottky diode is a one-carrier device, it has both advantages and disadvantages with respect to the junction diode which is a two-carrier device. The advantage is that there are practically no excess minority carriers which must be swept out
Hoeneisen, B., Mead, C. A.
core  

Current-voltage modeling of bilayer graphene nanoribbon Schottky diode [PDF]

, 2011
This paper is all about the current-voltage modeling of Bilayer Graphene Nanoribbons (BGNRs) Schottky Diode. The metal semiconductor devices were used in the beginning of the year 1900s. We can make a point contact diode by touching a metallic whisker to
Mohammad Taghi Ahmadi, Rahmani, Komeil, Nahid Shayesteh, Ahmadi, Mohammad Taghi, Rahmani, Meisam, Ismail, Razali, Meisam Rahmani, Noraliah Aziziah Amin, Komeil Rahmani, Amin, Noraliah Aziziah, Razali Ismail, Ismail, Komeil Razali, Shayesteh, Nahid   +12 more
core   +1 more source

Compact high‐efficiency c‐band rectifier with high input power for microwave power transmission

Electronics Letters, 2023
This letter presents a novel C‐band rectifier that is capable of handling high input power. The rectifier consists of a Schottky diode, an impedance matching circuit with a compensation microstrip structure, and an output filter with harmonic suppression
Hongzheng Zeng, Yuzhu Tang, Yunpeng Liu
doaj   +1 more source

Controlling Film Formation in Inkjet‐printed MAPbBr3 Through Graphene Incorporation for Enhanced Photodetection

Advanced Materials Technologies, EarlyView.
This work highlights the impact of incorporating graphene nanoflakes into precursor inks of MAPbBr3 for inkjet‐printed optoelectronic device applications. A substantial modification of the crystallization dynamics is reported despite miniscule concentrations.
Kenneth Lobo, Javier Bartolomé, María Vila, Giovanni Vescio, Raúl I. Sánchez‐Alarcón, Junaid Khan, Júlia Marí Guaita, Francisco Palacio Bonet, Juan P. Martínez‐Pastor, Sergi Hernández, Blas Garrido, Carmen Coya, Albert Cirera   +12 more
wiley   +1 more source