Results 81 to 90 of about 174,851 (286)

Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering

open access: yesMicro and Nano Engineering, 2019
A comparative study of the electrical and photodetection properties of ZnO and Cr doped ZnO thin films are being reported here. The films were deposited using magnetron sputtering. X-ray diffraction (XRD) revealed hexagonal crystal structure of the films
S. Fareed   +3 more
doaj   +1 more source

Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit

open access: yesAdvances in Condensed Matter Physics, 2020
In recent years, wireless energy transmission technology has developed rapidly and has received increasing attention in the industry. For microwave wireless energy transfer system applications, Ge Schottky diodes as the core components of the rectifier ...
Wei-Feng Liu   +4 more
doaj   +1 more source

Reverse biased Pt/nanostructured MoO3/SiC Schottky diode based hydrogen gas sensors

open access: yes, 2009
Pt/nanostructured molybdenum oxide (MoO3) /SiC Schottky diode based gas sensors were fabricated for hydrogen (H2) gas sensing. Due to the enhanced performance, which is ascribed to the application of MoO3 nanostructures, these devices were used in ...
Kalantar-zadeh, Kourosh   +11 more
core   +1 more source

Engineering Slow‐Carrier Interfacial Recombination Enables Tailored Spectral Response

open access: yesAdvanced Science, EarlyView.
This work demonstrates that weak‐drift slow carriers are preferentially captured at generic semiconductor surfaces/interfaces and recombine. This process is manipulated to achieve tailored spectral response. A tens of µm‐wide depletion region is created to observe surface collection rates for photocarriers generated at different positions.
Yibo Zhang   +5 more
wiley   +1 more source

Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

open access: yes, 2022
In this article, we reported on a Ga2O3-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga2O3 drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping.
Zhang, Yuantao   +17 more
core   +1 more source

Optically Tunable Threshold Switching and Thermally Activated Transport in Planar Ag/MAPbI3 Thin Single‐Crystal Devices

open access: yesAdvanced Science, EarlyView.
Planar Ag/MAPbI3 thin single‐crystal halide perovskite devices show ultralow dark current and optically tunable threshold switching. Illumination enhances the polarity‐dependent hysteresis and shifts the switching voltage, whereas temperature‐dependent measurements reveal thermally activated, contact‐limited transport, underscoring the central role of ...
Ofelia Durante   +16 more
wiley   +1 more source

Engineering Large‐Grain Metal Halide Perovskite Films via Chemical Vapor Deposition for High‐Performance, Ultralow‐Noise Perovskite Photodetectors

open access: yesAdvanced Science, EarlyView.
Chemical vapor deposition produces large‐grain, phase‐pure CsPbBr3 films (grains up to 35 µm) with Drude‐like terahertz photoconductivity and twofold higher carrier mobility versus spin‐coated references. These microstructural advances translate into photodetectors with a detectivity of 8.4 × 1012 Jones, dark current below 1 pA cm−2, X‐ray sensitivity ...
Roel Vanden Brande   +14 more
wiley   +1 more source

Activating Ionic Carbon Nitrides via Epitaxial Dyadic Coupling for Efficient Solar‐Driven H2O2 Generation

open access: yesAdvanced Science, EarlyView.
Epitaxial integration of a C1N1 phase onto KPHI creates a dyadic charge‐transfer nanostructure with strong interfacial electronic coupling. This architecture drives directional electron transfer from KPHI to C1N1, enabling efficient cocatalyst‐free solar H2O2 production.
Haijian Tong   +3 more
wiley   +1 more source

Effect of radiation-induced emission of Schottky defects on the formation of colloids in alkali halides [PDF]

open access: yes, 2003
Formation of vacancy clusters in irradiated crystals is considered taking into account radiation-induced Schottky defect emission (RSDE) from extended defects.
Hartog, H.W. den,   +8 more
core   +1 more source

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

open access: yesAdvanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee   +3 more
wiley   +1 more source

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