A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky Diodes
Micromachines, 2019 This paper describes the design and demonstration of a 135−190 GHz self-biased broadband frequency doubler based on planar Schottky diodes. Unlike traditional bias schemes, the diodes are biased in resistive mode by a self-bias resistor; thus, no ...
Chengkai Wu +5 more
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Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Advanced Science, EarlyView.Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source
Diode Schottky pe baza cristalelor anizotrope [PDF]
, 2009 Pending. Exibits Clasification: Class no. 10. Information Technology and Communication. Tehnologia Informatiei si ComunicatiiSchottky diodes based on planar anisotropic structures of ZnP2 and diverse metals were elaborated.
STAMOV, Ion +2 more
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Simulation of combined Schottky diode [PDF]
, 2013 Средствами системы TCAD Studio рассмотрены статические и динамические характеристики двухмерной конечно – разностной модели комбинированного диода Шоттки.
Кісельов, Є.М.
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Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks
Advanced Science, EarlyView.Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley +1 more source
Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors
Advanced Science, EarlyView.This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung +7 more
wiley +1 more source
SiC-Based Schottky Diode Gas Sensors [PDF]
, 1997 Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper.
Knight, Dak +5 more
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SiC lateral Schottky diode technology for integrated smart power converter [PDF]
, 2018 International audienceAmpere laboratory develops a technology of lateral power integrated circuit in Silicon Carbide (SiC). The purpose is to establish integrated power converter with its driver, which can operate in harsh environment.
Planson, Dominique +9 more
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Printed Silver Electrode for Silicon-based Schottky Barrier Diode: High Rectification Ratio Enabled by Ag/p-Si Interface Exceeds Theoretical Barrier Height [PDF]
, 2020 The printed electronics enables the fabrication of a variety of devices and is becoming important as critical techniques for some applications in diverse areas.
Toshiyuki, Tamai, Masashi, Saitoh
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Investigation of significantly high barrier height in Cu/GaN Schottky diode
AIP Advances, 2016 Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films.
Manjari Garg +4 more
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