Results 91 to 100 of about 470,842 (283)

Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit

Advances in Condensed Matter Physics, 2020
In recent years, wireless energy transmission technology has developed rapidly and has received increasing attention in the industry. For microwave wireless energy transfer system applications, Ge Schottky diodes as the core components of the rectifier ...
Wei-Feng Liu, Xue-Mei Wu, Jian-Jun Song, Xin-Yan Zhao, Rong-Xi Xuan   +4 more
doaj   +1 more source

Junction Physics and Architectural Paradigms in Optoelectronic Semiconductor Fibers

Advanced Science, EarlyView.
Optoelectronic fibers are emerging as a key platform for distributed sensing, energy harvesting, and optical communication in deformable systems. Their performance is fundamentally governed by junction formation under confined, dynamic processing conditions.
Hailiang Wang, Wenshu Ouyang, Yuhang Xiao, Wei Yan, Meifang Zhu   +4 more
wiley   +1 more source

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong‐Wook Kim   +8 more
wiley   +1 more source

Vapor‐Phase Grain‐Boundary Anchoring Enables Molecular Toughening and Record Bending Endurance in Pilot‐Scale Roll‐to‐Roll‐Printed Flexible Perovskite Modules

Angewandte Chemie, EarlyView.
A vapor‐phase molecular toughening strategy is developed for pilot‐scale roll‐to‐roll (R2R) ‐compatible fabrication of flexible perovskite solar modules. Thiol vapor selectively regulates crystallization and anchors at grain boundaries, reducing defects while enhancing mechanical resilience.
Lirong Dong, Viktor Rehm, Shudi Qiu, Zexian Han, Naveen Harindu Hemasiri, Michael Wurmshuber, Michael Wagner, Cindy‐Ly Tavera‐Méndez, Dorothea Wisser, Chaohui Li, Robin Basu, Leopold Lahn, Olga Kasian, Sarmad Feroze, Wolfgang Heiss, Andreas Distler, Hans‐Joachim Egelhaaf, Fu Yang, Christoph J. Brabec   +18 more
wiley   +2 more sources

Atomically Modulating Competing Exchange Interactions in Centrosymmetric Skyrmion Hosts GdRu2X2 (X = Si and Ge)

Advanced Electronic Materials, EarlyView.
Our work bridges the gap between skyrmion discovery and material design by demonstrating how atomic‐scale control of exchange interactions enables tunable skyrmion phase transitions in centrosymmetric magnetic metals. ABSTRACT Magnetic skyrmions are topologically protected spin states that hold promise for shaping the future of electronics.
Dasuni N. Rathnaweera, Xudong Huai, K. Ramesh Kumar, Michał J. Winiarski, Tomasz Klimczuk, Allana G. Iwanicki, Satya K. Kushwaha, Martin Mourigal, Tyrel M. McQueen, Thao T. Tran   +9 more
wiley   +1 more source

Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo, Seongmin Ko, Sunggyu Ryoo, Jaehyoung Park, Jaeyoung Kim, Juntae Jang, Jinwoo Sim, Donguk Kim, SeungNam Cha, Chongwu Zhou, Kyungjune Cho, Takhee Lee   +11 more
wiley   +1 more source

An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

Nanoscale Research Letters, 2018
Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices ...
Huiwen Xue, Qiming He, Guangzhong Jian, S. Long, T. Pang, Ming Liu   +5 more
semanticscholar   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

A comprehensive review of suitable interfacial insulating layer selection, I-V characteristics and working parameters in MIS structured Schottky diodes for multifunctional optoelectronic applications

Discover Electronics
Schottky Barrier diode (SBD) with Metal- Insulator- Semiconductor (MIS) structure is an important functional part for a broad spectrum of optoelectronic applications. This review paper illustrates the developments in the field of MIS structured SBDs that
K. U. Aiswarya, K. J. Arun, M. D. Aggarwal, Padmaja Guggilla   +3 more
doaj   +1 more source

Aging and Electrical Stability of DNTT Honey‐Gated OFETs

Advanced Electronic Materials, EarlyView.
DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira, Ana C. de Paula, José D. F. Dias, Maria H. L. O. Fung, Rafael Furlan de Oliveira, Gabriel L. Nogueira, Keli F. Seidel, José P. M. Serbena, Neri Alves   +8 more
wiley   +1 more source