Results 111 to 120 of about 174,851 (286)

SiC Schottky diode electrothermal macromodel [PDF]

, 2010
This paper presents a SiC Schottky diode model including static, dynamic and thermal features implemented as separate parameterized blocks constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources.
Masana Nadal, Francisco
core   +1 more source

Schottky-Diode Design for Future High-Speed Telecommunications. [PDF]

Nanomaterials (Basel), 2023
Wong CH, Lam LF, Hu X, Tsui CP, Zatsepin AF.   +4 more
europepmc   +1 more source

Simulation of Silicon Carbide Schottky diode (SiC)

, 2015
Includes bibliographical references (leaves 70-74)The specific Schottky diode that is designed and simulated in this project is an Silicon Carbide (SiC) Schottky diode.
Yadav, Deepak
core  

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

Advanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Markus Fritscher, Felix Reichmann, Oliver Skibitzki, Juan Bautista Roldán, Helena Castán, Salvador Dueñas, Christian Wenger, Eduardo Pérez   +11 more
wiley   +1 more source

Single nanowire-based UV photodetectors for fast switching

Nanoscale Research Letters, 2011
Relatively long (30 µm) high quality ZnO nanowires (NWs) were grown by the vapor-liquid-solid (VLS) technique. Schottky diodes of single NW were fabricated by putting single ZnO NW across Au and Pt electrodes.
Lu Jun, ul Hasan Kamran, Alvi N H, Nur O, Willander Magnus   +4 more
doaj  

Effect of Heating of Charge Carriers and Phonons on The Contact Resistance of Rectifying Metal-Semiconductor Structures

East European Journal of Physics
The dependence of the temperature of charge carriers and phonons on the contact resistance of the Schottky diode is calculated. It is shown that the increase in contact resistance depends on the current passing through the diode, the surface and volume ...
Gafur Gulyamov, K.B. Umarov, Alisher Z. Soliyev   +2 more
doaj   +1 more source

Fully rubbery Schottky diode and integrated devices. [PDF]

Sci Adv, 2022
Jang S, Shim H, Yu C.
europepmc   +1 more source

Silicon Carbide Schottky Barrier Diode

, 2004
This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin ...
Sheng, Kuang, Zhao, Jian H., Lebron-Velilla, Ramon C.   +2 more
core  

Simulation of Silicon Carbide Schottky diode (SiC) [PDF]

, 2011
The specific Schottky diode that is designed and simulated in this project is an Silicon Carbide (SiC) Schottky diode. Besides actual experiments in the research field, Schottky di{)de can also be simulated using special computer software.
Yadav, Deepak
core  

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source