Results 131 to 140 of about 174,851 (286)
Spintronic and plasmonic applications of electrodeposition on semiconductors
, 2009 In this thesis, metal electrodeposition on semiconductor substrates is investigated. We show that electrodeposition of metals on n-type Si and Ge is an excellent method to create Schottky barriers and that this method has a number of unique advantages ...
Li, X.
core +1 more source
Multiband Microstrip Rectenna Using ZnO-Based Planar Schottky Diode for RF Energy Harvesting Applications. [PDF]
Micromachines (Basel), 2023 Kayed SI +3 more
europepmc +1 more source
Advanced Electronic Materials, EarlyView.A compact resistively loaded metamaterial absorber captures RF energy at 2.4 GHz and directs most of the accepted power to modeled loads. The resonant response is confirmed experimentally for the fabricated absorber, while an impedance‐matched rectifier is evaluated through simulation. The stage‐wise results distinguish absorber, rectifier, and cascade
Md. Murad Kabir Nipun, Md. Jahedul Islam
wiley +1 more source
Simulation of combined Schottky diode
, 2013 Средствами системы TCAD Studio рассмотрены статические и динамические характеристики двухмерной конечно – разностной модели комбинированного диода Шоттки.
Кісельов, Є.М.
core +1 more source
Investigation of Deep Spiking Neural Networks Utilizing Gated Schottky Diode as Synaptic Devices. [PDF]
Micromachines (Basel), 2022 Lee ST, Bae JH.
europepmc +1 more source
Advanced Energy Materials, EarlyView.This review looks at the different experimental techniques that measure spatiotemporal charge carrier dynamics. This information is viewed in the context of particulate photocatalysts, outlining the insights these techniques provide and how they advance our understanding.
Sutripto Khasnabis, Robert Godin
wiley +1 more source
State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz. [PDF]
Sensors (Basel), 2023 Yadav R +6 more
europepmc +1 more source
Advanced Energy Materials, EarlyView.A novel top‐to‐bottom film restructuring strategy is applied to perovskite films, taking advantage of high penetration of vapor‐phase ligand. A gradient‐distributed 2D perovskite structure is built up from top surface to film bulk, meanwhile, inhomogeneity at the buried interface is mitigated, which leads to high quality perovskite films with improved ...
Zhengyan Jiang +8 more
wiley +1 more source
SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode. [PDF]
Materials (Basel), 2021 Deng X, Liu R, Li S, Li L, Wu H, Li X.
europepmc +1 more source
Pt/Nanostructured RuO2/SiC Schottky Diode Based Hydrogen Gas Sensors
, 2011 In this paper, we report the development of novel Pt/nanostructured RuO2/SiC Schottky diode based sensors for hydrogen gas applications. The nanostructured ruthenium oxide thin films were deposited on SiC substrates using radio frequency sputtering ...
COMINI, Elisabetta +19 more
core +1 more source