Results 151 to 160 of about 174,851 (286)

The Surge Current Failure and Thermal Analysis of 4H-SiC Schottky Barrier Diode

The surge current capability is one of the key parameters for the application of silicon carbide (SiC) Schottky barrier diode (SBD) in power converters. In this study, the surge current failure mechanism of a 650 V 4H-SiC SBD during non-repetitive surge ...
Cui, P, Xu, M, Zhong, Y, Zhang, B, Han, J, Cui, Y, Linewih, H   +6 more
core   +1 more source

Transparent and Photovoltaic Water–Semiconductor Interface for Ultra‐Low‐Light Omnidirectional Photodetection

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
A self‐powered photodetector using a static water–ZnO interface forms a Schottky‐like photovoltaic junction for ultra‐low‐light sensing. It delivers strong photoresponse, 360° detection, and flexibility, advancing transparent and sustainable water‐based optoelectronics.
Sanh Vo Thi, Malkeshkumar Patel, Sourov Hossain, Md Arifur Rahman Barno, Ngoc Le Trinh, Han‐Bo‐Ram Lee, Yu Kwon Kim, Joondong Kim   +7 more
wiley   +1 more source

Highly Fast Response of Pd/Ta₂O₅/SiC and Pd/Ta₂O₅/Si Schottky Diode-Based Hydrogen Sensors. [PDF]

Sensors (Basel), 2021
Hussain M, Jeong W, Kang IS, Choi KK, Jaffery SHA, Jaffery SHA, Ali A, Hussain T, Ayaz M, Hussain S, Jung J.   +10 more
europepmc   +1 more source

Recent Progress of Metal Halide Perovskite‐Based S‐Scheme Heterojunction for Solar Energy Conversion

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Recent advances in metal halide perovskite‐based S‐scheme photocatalytic heterojunctions are systematically reviewed in this work. Synthetic protocols, state‐of‐the‐art characterizations for tracking interfacial charge transfer, and their diverse photocatalytic applications are thoroughly explored.
Xinhe Wu, Shujie Yin, Jiachao Xu, Lihong Tan, Guohong Wang   +4 more
wiley   +1 more source

ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices

Electron, EarlyView.
This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker, Adrien Baillard, Estelle Appert, Vincent Consonni   +3 more
wiley   +1 more source

Light‐Modulated Exchange Bias in Multiferroic Heterostructures

Electron, EarlyView.
In this article, exchange bias and magnetization are modulated with visible light at room temperature in PMN‐PZT/FeGa/IrMn multiferroic heterostructures. Photostrictive effect is the main mechanism leading to the modulation of magnetic anisotropy and interfacial exchange bias coupling between the ferromagnetic and antiferromagnetic layers.
Huan Tan, Zheng Ma, Cynthia Bou Karroum, Matthieu Liparo, Jean‐Philippe Jay, David Spenato, David T. Dekadjevi, Luís Martínez Armesto, Alberto Quintana, Jordi Sort   +9 more
wiley   +1 more source

An electrically conductive dinuclear double helicate Al(iii) complex for the fabrication of a Schottky diode. [PDF]

RSC Adv
Raja MH, Sil S, Ahmed S, Sk R, Mondal MRA, Baig KMY, Sarmah MP, Khatun N, Ray PP, Kole GK, Sarma M, Islam AKMM, Zangrando E, Alam MA.   +13 more
europepmc   +1 more source

Fabrication and characterisation of Silicon-Germanium Schottky diode

, 2003
In this project, both the silicon and silicon germanium schottky barrier diode were fabricated and studied. Pt, Ti and W metal were investigated as schottky materials.
Tan, Oscar Aik Poh.
core  

Reconfigurable Logic Operation of MoTe2 Homojunction Enabled by Staggered Double‐Sided Contacts

Electron, EarlyView.
A gap adjacent to an electrode in the MoTe2 SDC transistor enables polarity reconfiguration, switching between p‐type and n‐type depending on bias polarity. This reconfiguration is ensured when the absolute bias voltage is less than the gate voltage, yielding a near‐ideal subthreshold swing of 67.6 mV/dec and on/off ratios of 104–106.
Jun‐Qiang Zhang, Jia‐Yi Zhang, Jiong‐Tao Zhang, Xu Zeng, Yuntian Wu, Lili He, Xiangyu Hou, Xiaoguang Luo   +7 more
wiley   +1 more source

Copper Oxide-Based Schottky Diode Using Poly(3-hexylthiophene) as an Interlayer. [PDF]

ACS Omega
Patel VD, Mohanty A, Roy A, Gupta D.
europepmc   +1 more source