Results 141 to 150 of about 470,842 (283)
Diamond Schottky barrier diodes
, 2010 Research on wide band gap semiconductors suitable for power electronic devices has spread rapidly in the last decade. The remarkable results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high ...
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physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi +8 more
wiley +1 more source
Interface Engineering of Chemical Vapor‐Deposited 2D MoSe2
physica status solidi (RRL) – Rapid Research Letters, EarlyView.Fluorine exposure and nitrogen ion implantation are employed as interface engineering strategies to modulate the near‐surface electronic structure of chemical vapor deposition‐grown MoSe2. Spectroscopic analysis reveals that fluorination induces mild lattice modifications and p‐type doping, while nitrogen implantation introduces defects and n‐type ...
Guilherme Araújo +4 more
wiley +1 more source
Small, EarlyView.Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source
Copper Oxide-Based Schottky Diode Using Poly(3-hexylthiophene) as an Interlayer. [PDF]
ACS OmegaPatel VD, Mohanty A, Roy A, Gupta D.
europepmc +1 more source
Anthracene-Based Fluorophore and Its Re(I) Complexes: Investigation of Electrical Properties and Schottky Diode Behavior. [PDF]
ACS Omega, 2020 Sinha D, Sil S, Ray PP, Rajak KK.
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Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices
Small, EarlyView.The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis +12 more
wiley +1 more source
A Compact 380 GHz Zero-Bias Schottky Diode Detector for High-Sensitivity Radiometer Applications. [PDF]
Micromachines (Basel)Tang H, Deng Y, Zhang D.
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Electrically Tunable Tunneling and Spectral Response in WSe2/h‐BN/CdSe/Graphene Heterostructure
Small, EarlyView.In the WSe2/h‐BN/CdSe quantum dot/graphene heterostructure, the graphene voltage dynamically tunes the tunneling barrier and energy alignment across the h‐BN layer. The bias‐dependent Fermi‐level alignment enhances the tunneling density of states, leading to efficient extraction of photo‐excited electrons from QDs into WSe2 and graphene.
Sang‐Hyeon Lee +6 more
wiley +1 more source
Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling. [PDF]
ACS OmegaKaraca A, Yıldız DE, Tataroğlu A.
europepmc +1 more source