Advanced Functional Materials, Volume 36, Issue 44, 1 June 2026.A cross‐layer passivation strategy employing molecularly designed thiazol‐5‐ylmethanamine hydrochloride (TMACl) enables coherent defect regulation at the SnO2/perovskite interface, stabilizes both layers, promotes phase‐pure α‐FAPbI3 formation, and enhances charge extraction, delivering PCEs of 26.44% in rigid and 24.72% in flexible perovskite solar ...
Fan Shen +16 more
wiley +1 more source
Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications. [PDF]
ACS Appl Mater InterfacesMajchrzak D +8 more
europepmc +1 more source
In Situ Regenerative Adduct Assisted p‐Type Doping of Organic Semiconductor
Advanced Materials, Volume 38, Issue 34, 17 June 2026.An in situ regenerative adduct‐assisted (IRAA) doping strategy is introduced for p‐type doping of organic semiconductors. A regenerating adduct serves as the dopant, enabling highly efficient doping with a choice of counterions. The generality of this approach provides a scalable route to dope a wide range of hole‐transport materials with high thermal ...
Brijesh K. Patel +8 more
wiley +1 more source
Schottky Diode Leakage Current Fluctuations: Electrostatically Induced Flexoelectricity in Silicon. [PDF]
Adv Sci (Weinh)Hurtado C +3 more
europepmc +1 more source
Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan +3 more
wiley +1 more source
Effects of 10 keV Electron Irradiation on the Performance Degradation of SiC Schottky Diode Radiation Detectors. [PDF]
Micromachines (Basel)Ruan J +7 more
europepmc +1 more source
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk +8 more
wiley +1 more source
Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance
Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim +4 more
wiley +1 more source
Electrical Properties of Laser Patterned Schottky Diode with ALD-Grown TiO2 Interlayer. [PDF]
ACS OmegaDikicioǧlu E +6 more
europepmc +1 more source
A graphene/Si Schottky diode for the highly sensitive detection of protein. [PDF]
RSC Adv, 2019 Noroozi AA, Abdi Y.
europepmc +1 more source