Borophene‐based sensing platforms: Pioneering ultrasensitive detection
Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
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A Compact 380 GHz Zero-Bias Schottky Diode Detector for High-Sensitivity Radiometer Applications. [PDF]
Tang H, Deng Y, Zhang D.
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Anthracene-Based Fluorophore and Its Re(I) Complexes: Investigation of Electrical Properties and Schottky Diode Behavior. [PDF]
Sinha D, Sil S, Ray PP, Rajak KK.
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Abstract Imagers operating in the visible to near‐infrared (NIR) range play an important role in applications such as industrial sorting, security surveillance, and autonomous driving. However, conventional imaging technologies based on silicon and III–V semiconductors suffer from several limits, including restricted spectral range, high fabrication ...
Xin Hong +4 more
wiley +1 more source
TCAD investigation of β-Ga<sub>2</sub>O<sub>3</sub> junction barrier Schottky diode with p-Cr<sub>2</sub>O<sub>3</sub> heterojunction wells. [PDF]
Than PH, Than TQ, Takaki Y.
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Centered on the multiscale meniscus, this review dissects mass transport in meniscus‐guided coating into parallel and lateral components. By analyzing the balance of multiple factors during crystallization, it establishes a clear morphology‐performance relationship.
Yumeng Wang +7 more
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Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling. [PDF]
Karaca A, Yıldız DE, Tataroğlu A.
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This review explores recent progress in printing strategies such as inkjet, screen, liquid metal, and roll to roll (R2R) methods and their roles in fabricating flexible TFTs. Device architectures are examined with emphasis on printed components and their influence on performance and stability.
Xia Zhao +6 more
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Single V2 defect in 4H silicon carbide Schottky diode at low temperature. [PDF]
Steidl T +13 more
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Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions. [PDF]
Li J +6 more
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