Overcoming spectral limits of perovskite photodetectors for the infrared region
Infrared (IR) photodetectors are vital for modern optoelectronics, but traditional inorganic semiconductors face limitations in cost, processing, and bandgap tunability. This review provides a summary of advanced strategies to extend metal halide perovskites into the IR region, categorizing approaches into intrinsic material engineering, physical ...
Jiean Li +4 more
wiley +1 more source
An electrically conductive dinuclear aluminium complex for the fabrication of a Schottky diode. [PDF]
Alam MA +8 more
europepmc +1 more source
Organic neuromorphic optoelectronic sensing materials, intelligent devices, and bionic systems
Due to the excellent performance and biocompatibility, organic neuromorphic photoelectric sensing technology is regarded as a highly promising research field. In this review, Liu et al. summarize the recent advances in related materials, devices, and system integration.
Yu‐ang Liu +4 more
wiley +1 more source
Investigation of electrical transport mechanisms in an n-CdIn<sub>2</sub>Se<sub>4</sub>/Pt thin film Schottky diode fabricated by pulsed laser deposition. [PDF]
Dhruv SD +10 more
europepmc +1 more source
A Schottky photodiode based on (Al0.14Ga0.86)2O3 was developed, in which the sensing and processing functions were temporally decoupled through bias voltage modulation. By integrating single‐pixel imaging with a reservoir computing architecture, a comprehensive intelligent vision system was constructed.
Hongbin Wang +10 more
wiley +1 more source
Green synthesis of carbon dot structures from Rheum Ribes and Schottky diode fabrication. [PDF]
Durmus MT, Bozkurt E.
europepmc +1 more source
Application of a Schottky Diode as a Temperature Sensor
189-193A simple technique is proposed for low range temperature measurement using a Schottky barrier diode. A square root circuit is applied to regulate the thermionic current of the diode into a linear relationship with ambient temperature variation ...
Dutta, Sutanu +2 more
core
This review provides a comprehensive perspective on p‐doping in two‐dimensional transition metal dichalcogenides, linking the origins of carrier polarity, doping mechanisms, verification methodologies, and device‐level impacts. By establishing correlations among atomic‐scale doping, carrier modulation, and device functionality, it offers practical ...
Seo Yeon Han +4 more
wiley +1 more source
Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications. [PDF]
Majchrzak D +8 more
europepmc +1 more source
Schottky Diode Leakage Current Fluctuations: Electrostatically Induced Flexoelectricity in Silicon. [PDF]
Hurtado C +3 more
europepmc +1 more source

