Fabrication of High‐Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS
A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Ju Hee Mun +10 more
wiley +1 more source
Sensing of NO<sub>2</sub>, NH<sub>3</sub>, and C<sub>3</sub>H<sub>6</sub>O by graphene-Si Schottky diode at chosen voltage biases. [PDF]
Drozdowska K +6 more
europepmc +1 more source
Flexible carbon nanotube Schottky diode and its integrated circuit applications. [PDF]
Lee Y +10 more
europepmc +1 more source
Iodine incorporation into the CdS buffer layer induces spontaneous anion diffusion and selectively passivates selenium vacancies in Sb2Se3 absorbers. The formation of low‐energy, charge‐neutral ISe defects effectively suppresses non‐radiative recombination, resulting in a substantially enhanced open‐circuit voltage and boosting the device efficiency to
Luyan Shen +6 more
wiley +1 more source
Modeling of Schottky diode and optimal matching circuit design for low power RF energy harvesting. [PDF]
Reddaf A +8 more
europepmc +1 more source
We identify two decisive levers for SAM interfaces: molecular design (carboxylic acid‐based, phosphonic acid, other anchoring chemistries, and polymeric SAMs) and mixing routes (co‐assembly, in situ assembly, pre‐ and post‐treatment). Coordinated tuning of headgroups and assembly pathways optimises energy alignment and film formation, suppresses ...
Jiaxu Zhang, Bochun Kang, Feng Yan
wiley +1 more source
Impact of Nickel Diffusion on Leakage Current Degradation in β‐Ga2O3 Schottky Barrier Diodes
The diffusion of Ni atoms during Schottky electrode fabrication induces localized stress defects in β‐Ga₂O₃ substrates, which act as primary reverse leakage pathways in SBDs. Elucidating this mechanism provides critical guidance for optimizing electrode composition in high‐performance β‐Ga₂O₃ electronics.
Ziyi Wang +9 more
wiley +1 more source
Comparative study on gas sensing by a Schottky diode electrode prepared with graphene-semiconductor-polymer nanocomposites. [PDF]
Biswas MRUD, Oh WC.
europepmc +1 more source
Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang +6 more
wiley +1 more source
Nanoscale High-Tc YBCO/GaN Super-Schottky Diode. [PDF]
Panna D +6 more
europepmc +1 more source

