Results 171 to 180 of about 174,851 (286)

Overcoming spectral limits of perovskite photodetectors for the infrared region

open access: yesInfoScience, EarlyView.
Infrared (IR) photodetectors are vital for modern optoelectronics, but traditional inorganic semiconductors face limitations in cost, processing, and bandgap tunability. This review provides a summary of advanced strategies to extend metal halide perovskites into the IR region, categorizing approaches into intrinsic material engineering, physical ...
Jiean Li   +4 more
wiley   +1 more source

An electrically conductive dinuclear aluminium complex for the fabrication of a Schottky diode. [PDF]

open access: yesRSC Adv
Alam MA   +8 more
europepmc   +1 more source

Organic neuromorphic optoelectronic sensing materials, intelligent devices, and bionic systems

open access: yesInfoMat, EarlyView.
Due to the excellent performance and biocompatibility, organic neuromorphic photoelectric sensing technology is regarded as a highly promising research field. In this review, Liu et al. summarize the recent advances in related materials, devices, and system integration.
Yu‐ang Liu   +4 more
wiley   +1 more source

Investigation of electrical transport mechanisms in an n-CdIn<sub>2</sub>Se<sub>4</sub>/Pt thin film Schottky diode fabricated by pulsed laser deposition. [PDF]

open access: yesRSC Adv
Dhruv SD   +10 more
europepmc   +1 more source

Programmable solar‐blind ultraviolet sensors enabling integrated single‐pixel sensing and neuromorphic processing

open access: yesInfoMat, EarlyView.
A Schottky photodiode based on (Al0.14Ga0.86)2O3 was developed, in which the sensing and processing functions were temporally decoupled through bias voltage modulation. By integrating single‐pixel imaging with a reservoir computing architecture, a comprehensive intelligent vision system was constructed.
Hongbin Wang   +10 more
wiley   +1 more source

Application of a Schottky Diode as a Temperature Sensor

open access: yes, 2015
189-193A simple technique is proposed for low range temperature measurement using a Schottky barrier diode. A square root circuit is applied to regulate the thermionic current of the diode into a linear relationship with ambient temperature variation ...
Dutta, Sutanu   +2 more
core  

Origin, verification, and device‐level impacts of p‐doping in two‐dimensional transition metal dichalcogenides

open access: yesInfoMat, EarlyView.
This review provides a comprehensive perspective on p‐doping in two‐dimensional transition metal dichalcogenides, linking the origins of carrier polarity, doping mechanisms, verification methodologies, and device‐level impacts. By establishing correlations among atomic‐scale doping, carrier modulation, and device functionality, it offers practical ...
Seo Yeon Han   +4 more
wiley   +1 more source

Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications. [PDF]

open access: yesACS Appl Mater Interfaces
Majchrzak D   +8 more
europepmc   +1 more source

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