Results 171 to 180 of about 470,842 (283)

Fabrication of High‐Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS

open access: yesAdvanced Science, Volume 13, Issue 34, 19 June 2026.
A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Ju Hee Mun   +10 more
wiley   +1 more source

Flexible carbon nanotube Schottky diode and its integrated circuit applications. [PDF]

open access: yesRSC Adv, 2019
Lee Y   +10 more
europepmc   +1 more source

Diffusion‐Driven Targeted Passivation of Selenium Vacancies via an I‐Doped CdS Buffer Layer for Efficient Sb2Se3 Solar Cells

open access: yesAdvanced Science, Volume 13, Issue 31, 4 June 2026.
Iodine incorporation into the CdS buffer layer induces spontaneous anion diffusion and selectively passivates selenium vacancies in Sb2Se3 absorbers. The formation of low‐energy, charge‐neutral ISe defects effectively suppresses non‐radiative recombination, resulting in a substantially enhanced open‐circuit voltage and boosting the device efficiency to
Luyan Shen   +6 more
wiley   +1 more source

Modeling of Schottky diode and optimal matching circuit design for low power RF energy harvesting. [PDF]

open access: yesHeliyon
Reddaf A   +8 more
europepmc   +1 more source

Molecular Design and Interfacial Functions of Self‐Assembled Monolayers for Perovskite and Tandem Solar Cells

open access: yesAdvanced Energy Materials, Volume 16, Issue 23, 17 June 2026.
We identify two decisive levers for SAM interfaces: molecular design (carboxylic acid‐based, phosphonic acid, other anchoring chemistries, and polymeric SAMs) and mixing routes (co‐assembly, in situ assembly, pre‐ and post‐treatment). Coordinated tuning of headgroups and assembly pathways optimises energy alignment and film formation, suppresses ...
Jiaxu Zhang, Bochun Kang, Feng Yan
wiley   +1 more source

Impact of Nickel Diffusion on Leakage Current Degradation in β‐Ga2O3 Schottky Barrier Diodes

open access: yesInformation &Functional Materials, Volume 3, Issue 2, Page 189-196, June 2026.
The diffusion of Ni atoms during Schottky electrode fabrication induces localized stress defects in β‐Ga₂O₃ substrates, which act as primary reverse leakage pathways in SBDs. Elucidating this mechanism provides critical guidance for optimizing electrode composition in high‐performance β‐Ga₂O₃ electronics.
Ziyi Wang   +9 more
wiley   +1 more source

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

open access: yesInformation &Functional Materials, Volume 3, Issue 2, Page 66-100, June 2026.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang   +6 more
wiley   +1 more source

Nanoscale High-Tc YBCO/GaN Super-Schottky Diode. [PDF]

open access: yesSci Rep, 2018
Panna D   +6 more
europepmc   +1 more source

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