Results 181 to 190 of about 174,851 (286)
Impacts of Fermi Level Pinning at Hole‐Selective Contacts in CdSeTe/CdTe Solar Cells
Experimental measurements and SCAPS simulations consistently demonstrate dark–light J–V non‐superposition in CdSeTe/CdTe solar cells. The results indicate that donor‐like interface states at the ZnTe/CdTe contact pin the Fermi level, thereby producing a parasitic built‐in voltage that accounts for the observed non‐superposition (take‐off) behavior ...
Ariful Islam +5 more
wiley +1 more source
Effects of 10 keV Electron Irradiation on the Performance Degradation of SiC Schottky Diode Radiation Detectors. [PDF]
Ruan J +7 more
europepmc +1 more source
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi +8 more
wiley +1 more source
Environmental pollution and water scarcity demand innovative purification methods. This study presents a sol‐gel approach to fabricate mixed silica–titania thin films joining photocatalytic activity with selective sorption capability. The films exhibit higher surface area, enhanced degradation of cationic and improved performance over bare titania ...
Andrea Lanfranchi +13 more
wiley +1 more source
Electrical Properties of Laser Patterned Schottky Diode with ALD-Grown TiO2 Interlayer. [PDF]
Dikicioǧlu E +6 more
europepmc +1 more source
A graphene/Si Schottky diode for the highly sensitive detection of protein. [PDF]
Noroozi AA, Abdi Y.
europepmc +1 more source
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source
Sensing of NO<sub>2</sub>, NH<sub>3</sub>, and C<sub>3</sub>H<sub>6</sub>O by graphene-Si Schottky diode at chosen voltage biases. [PDF]
Drozdowska K +6 more
europepmc +1 more source
Flexible carbon nanotube Schottky diode and its integrated circuit applications. [PDF]
Lee Y +10 more
europepmc +1 more source
Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices
The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis +12 more
wiley +1 more source

