Results 201 to 210 of about 470,842 (283)
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, 2021
In this paper, we show that high-performance β-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with various β-Ga2O3 periodic fin widths of 1.5/3/5 μm are demonstrated with the incorporation of p-type NiOx.
Qinglong Yan +14 more
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In this paper, we show that high-performance β-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with various β-Ga2O3 periodic fin widths of 1.5/3/5 μm are demonstrated with the incorporation of p-type NiOx.
Qinglong Yan +14 more
semanticscholar +1 more source
High Performance Self‐Driven Photodetectors Based on MoS2 Schottky Barrier Diode
Advanced Optical Materials, 2023Practical application of two‐dimensional transition metal dichalcogenides (2D TMDCs) involves creating a p‐n diode and a Schottky diode. Unlike p‐n diodes, the research of 2D material‐based Schottky diodes especially in the application field of ...
Mengde Dai +10 more
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Single-Dislocation Schottky Diodes
Nano Letters, 2021Dislocations often exhibit unique physical properties distinct from those of the bulk material. However, functional applications of dislocations are challenging due to difficulties in the construction of high-performance devices of dislocations. Here we demonstrate unidirectional single-dislocation Schottky diode arrays in a Fe2O3 thin film on Nb-doped
Ang Tao +9 more
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Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition
, 2021Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition (MOCVD)-grown epitaxial films are reported in this paper for high-power application devices.
E. Farzana +6 more
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IEEE Transactions on Circuits and Systems - II - Express Briefs, 2020
A novel parameter extraction method for the Schottky diode’s large-signal equivalent-circuit model is proposed, and used to design high-efficiency microwave rectifying circuits.
Qiang Chen +3 more
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A novel parameter extraction method for the Schottky diode’s large-signal equivalent-circuit model is proposed, and used to design high-efficiency microwave rectifying circuits.
Qiang Chen +3 more
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Physical Review Letters, 1994
A Schottky contact consisting of a semiconducting ferroelectric material and a high work function metal shows a bistable conduction characteristic. An on/off ratio of about 2 orders of magnitude was obtained in a structure consisting of a 0.2 \ensuremath{\mu}m ferroelectric PbTi${\mathrm{O}}_{3}$ film, a Au Schottky contact, and a ${\mathrm{La}}_{0.5}$$
, Blom, , Wolf, , Cillessen, , Krijn
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A Schottky contact consisting of a semiconducting ferroelectric material and a high work function metal shows a bistable conduction characteristic. An on/off ratio of about 2 orders of magnitude was obtained in a structure consisting of a 0.2 \ensuremath{\mu}m ferroelectric PbTi${\mathrm{O}}_{3}$ film, a Au Schottky contact, and a ${\mathrm{La}}_{0.5}$$
, Blom, , Wolf, , Cillessen, , Krijn
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Superlattices and Microstructures, 2019
We have investigated the detailed temperature dependent mechanism across the interface formed in Ag/p-Si Schottky diode. The Schottky diodes were fabricated by depositing highly pure silver and aluminum metals on the front and back sides of the boron ...
Arvind Kumar +3 more
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We have investigated the detailed temperature dependent mechanism across the interface formed in Ag/p-Si Schottky diode. The Schottky diodes were fabricated by depositing highly pure silver and aluminum metals on the front and back sides of the boron ...
Arvind Kumar +3 more
semanticscholar +1 more source
Journal of Nanoscience and Nanotechnology, 2021
We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot.
Seong-Ji, Min +3 more
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We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot.
Seong-Ji, Min +3 more
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Molecules that mimic Schottky diodes
Physical Chemistry Chemical Physics, 2006Self-assembled monolayers of cationic donor-(pi-bridge)-acceptor dyes coupled with anionic donors exhibit asymmetric current-voltage (I-V) characteristics when contacted by Au or PtIr probes. Rectification ratios of 3000 at +/- 1 V are obtained from Au-S-C10H20-A+-pi-D|D-|Au structures in which the cationic moiety is 5-(4-dimethylaminobenzylidene)-5,6 ...
Geoffrey J, Ashwell +2 more
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