Results 221 to 230 of about 470,842 (283)
Some of the next articles are maybe not open access.
Metallization of power Schottky diodes
Vacuum, 1990Abstract A study involving the choice of basic materials, the structure of the Schottky diodes and the results of surface preparation before metallization with the barrier metals Cr and W in connection with the TiNiAu metallization system is presented.
A Pintar, J Razinger
openaire +1 more source
Journal of Physics E: Scientific Instruments, 1972
The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
openaire +1 more source
The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
openaire +1 more source
Ultrafast generation of magnetic fields in a Schottky diode
Nature, 2001For the development of future magnetic data storage technologies, the ultrafast generation of local magnetic fields is essential. Subnanosecond excitation of the magnetic state has so far been achieved by launching current pulses into micro-coils and micro-striplines and by using high-energy electron beams.
Acremann Y +5 more
openaire +3 more sources
High-Performance Vertical $\beta$ -Ga2O3 Schottky Barrier Diode With Implanted Edge Termination
IEEE Electron Device Letters, 2019This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of the vertical $\beta $ -Ga2O3 Schottky barrier diode (SBD).
Hong Zhou +13 more
semanticscholar +1 more source
Gold/Ga0.85Al0.15Sb Schottky diodes
Journal of Applied Physics, 1985Gold on n-type Ga0.85Al0.15Sb devices were prepared and characterized. Current versus voltage (I-V) and capacitance versus voltage (C-V) measurements are discussed following the classical models of thermionic field emission and metal-insulator-semiconductor devices.
L. Gouskov +5 more
openaire +1 more source
Characterization and modelling of THz Schottky diodes
2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014Efficient characterization and modelling techniques have a key role in the development of Schottky diode-based devices with state-of-the-art performance. This paper makes an effort to introduce such techniques and to provide examples of how they are used by the Schottky community.
openaire +2 more sources
High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics
IEEE Electron Device Letters, 2021F. Zhou +8 more
semanticscholar +1 more source
Temperature-Dependent I–V Characteristics of In/p-SnSe Schottky Diode
Journal of Electronic Materials, 2021Hetal Patel +6 more
semanticscholar +1 more source
Hydrogen detection by Schottky diodes
International Journal of Hydrogen Energy, 1982Abstract A compact hydrogen detector utilizing the Schottky barrier diode of a palladium-oxide-silicon structure as a sensor was developed. A bridge circuit compensated the temperature dependence of the diode characteristics. With the sensor operating at room temperature, the detector was able to respond to 2000 ppm H2 in air within 10 s.
K ITO, K KOJIMA
openaire +1 more source
1992
Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
openaire +1 more source
Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
openaire +1 more source