Results 231 to 240 of about 470,842 (283)
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1982
Power can be efficiently converted from the mains to low voltage, high current, d.c. in the switched mode power supply. The output stages require low voltage, fast diodes to minimize the losses. Reverse recovery times of 30 ns, and reverse voltages of 200 V can be achieved by replacing the double-diffused structure with an epitaxial one.
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Power can be efficiently converted from the mains to low voltage, high current, d.c. in the switched mode power supply. The output stages require low voltage, fast diodes to minimize the losses. Reverse recovery times of 30 ns, and reverse voltages of 200 V can be achieved by replacing the double-diffused structure with an epitaxial one.
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Photosensitive barium titanate Schottky diodes
IEEE Transactions on Electron Devices, 1968The observation of photocurrents generated in Schottky barrier diodes on Remeika-grown reduced barium titanate is reported. Photon-to-electron conversion efficiencies of 5% at 0.3 μm have been measured which suggests that the effect may be large enough for employment in practical devices.
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Characterisation of Fullerene Schottky Diodes
1993The fabrication and characterisation of the fullerenes C60 and C70 as semiconductors in Schottky diodes are reported. The preparation of these devices involved forming a Schottky barrier between heavily doped n-Si and Ca with C70, and Mg-ln with C60. Electrical diode characteristics are determined and from these measurements both the device quality and
S. Curran +10 more
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1993
The use of metal-semiconductor diodes for detection was probably the first operational use of semiconductors. In 1874, Ferdinand Braun made a detector composed of a piece of galena (lead sulphide) and a metallic contact. As is well known, such devices have been extensively used for the same purpose in the simple radio receivers used in the beginning of
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The use of metal-semiconductor diodes for detection was probably the first operational use of semiconductors. In 1874, Ferdinand Braun made a detector composed of a piece of galena (lead sulphide) and a metallic contact. As is well known, such devices have been extensively used for the same purpose in the simple radio receivers used in the beginning of
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ECS Transactions, 2012
Metalorganic Chemical Vapor Deposition (MOCVD) GaN films were grown simultaneously on multiple substrates ranging in threading dislocation density from 10^3 to 10^10 cm^-2. GaN power Schottky diodes were fabricated on these films to examine the role of crystalline defects on the performance of these devices.
Randy P. Tompkins +12 more
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Metalorganic Chemical Vapor Deposition (MOCVD) GaN films were grown simultaneously on multiple substrates ranging in threading dislocation density from 10^3 to 10^10 cm^-2. GaN power Schottky diodes were fabricated on these films to examine the role of crystalline defects on the performance of these devices.
Randy P. Tompkins +12 more
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Edge effects in Schottky diodes
Solid-State Electronics, 1990Abstract The current-voltage ( I − V ) characteristics of unguarded Schottky diodes are investigated by applying the tunneling theory of Stratton to the non-parabolic barrier at the diode edge. The form of this barrier having been first determined by an appropriate solution of the Poisson equation in this region.
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Extraction of Schottky diode parameters from forward current-voltage characteristics
, 1986S. Cheung, N. Cheung
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