Results 211 to 220 of about 470,842 (283)
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Thin Solid Films, 2019
Radio frequency magnetron sputtered Al-doped zinc oxide (AZO) thin films were formed on n-type gallium nitride (GaN). X-ray diffraction reflections and Raman modes confirmed the formation of the AZO films.
V. Janardhanam +4 more
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Radio frequency magnetron sputtered Al-doped zinc oxide (AZO) thin films were formed on n-type gallium nitride (GaN). X-ray diffraction reflections and Raman modes confirmed the formation of the AZO films.
V. Janardhanam +4 more
semanticscholar +1 more source
1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019This paper presents the design and experimental analysis of 1200-V 4H-silicon carbide (SiC) merged PiN Schottky (MPS) diodes. Design considerations and device performances of the MPS diodes are compared with those of the junction barrier Schottky (JBS ...
Jiupeng Wu +3 more
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Vacuum, 2020
This study examined the temperature-dependent current-voltage (I–V) characteristics of the Ni/Au Schottky contact to β-Ga2O3. The Au/Ni/β-Ga2O3 Schottky diode showed a good rectifying behavior.
P. Reddy +6 more
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This study examined the temperature-dependent current-voltage (I–V) characteristics of the Ni/Au Schottky contact to β-Ga2O3. The Au/Ni/β-Ga2O3 Schottky diode showed a good rectifying behavior.
P. Reddy +6 more
semanticscholar +1 more source
IEEE Transactions on Microwave Theory and Techniques, 1977
The super-Schottky-barrier diode, a superconductor-semiconductor tunneling junction, has been established as the most sensitive detector of microwaves. These record sensitivities were obtained in both the video and mixing modes of operation. Measurements at X-band have yielded a video NEP of 5 x 10/sup -16/ W/Hz/sup 1/2/ and a mixer input noise ...
F.L. Vernon +5 more
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The super-Schottky-barrier diode, a superconductor-semiconductor tunneling junction, has been established as the most sensitive detector of microwaves. These record sensitivities were obtained in both the video and mixing modes of operation. Measurements at X-band have yielded a video NEP of 5 x 10/sup -16/ W/Hz/sup 1/2/ and a mixer input noise ...
F.L. Vernon +5 more
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Comparison Study of Surge Current Capability of Body Diode of SiC MOSFET and SiC Schottky Diode
European Conference on Cognitive Ergonomics, 2018The superior performance of the SiC MOSFETs operating in synchronous mode converter without external antiparallel SiC Schottky diodes have been demonstrated recently. However, there are few studies of the surge current capability of the SiC MOSFET's body
Xi Jiang +7 more
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A novel InGaAs Schottky-2DEG diode
1993 (5th) International Conference on Indium Phosphide and Related Materials, 2002The preparation and properties of planar pseudomorphic InGaAs Schottky two-dimensional electron gas (2DEG) diodes are described. Single- and double-barrier diodes were prepared on metal-organic vapor phase epitaxial (MOVPE) grown modulation doped FET (MODFET)-like structures.
MARSO, Michel +5 more
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Capacitance of cadmium telluride Schottky diodes
Physica Status Solidi (a), 1978The ac small signal capacitance of Schottky structures obtained on undoped (106 Ωcm) and chlorine compensated (108Ωcm) p-type CdTe as well as on low resistivity (300 to 1000 Ωcm) n-type material is analyzed. For the lower resistivity p- and n-type samples, deviations from the expected behaviour are observed, which are explained in terms of a model ...
Rabin, B., Tabatabai, H., Siffert, P.
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Ideal Schottky diodes on passivated silicon
Physical Review Letters, 1992Because of the complicated electronic and metallurgical properties of the metal-semiconductor interface, there is much controversy about the theoretical interpretation of experimental results on Schottky barrier heights. We present a new approch of barrier height measurements on a prototypical clean, abrupt and noninteracting system consisting of ...
, Wittmer, , Freeouf
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Carbon–Silicon Schottky Barrier Diodes
Small, 2012The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained.
Chanyoung, Yim +4 more
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1998
A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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