Results 121 to 130 of about 174,851 (286)

Complementary Doped Source-Based Reconfigurable Schottky Diode as an Equivalence Logic Gate. [PDF]

ACS Omega, 2023
Jin X, Yuan X, Zhang S, Li M, Liu X.
europepmc   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

AIP Advances
The use of the low work function (4.5 eV) tungsten (W) as a rectifying contact was studied to obtain low on-voltages in W/Ga2O3 Schottky rectifiers and NiO/Ga2O3 heterojunction rectifiers that were simultaneously fabricated on a single wafer. The devices
Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton   +4 more
doaj   +1 more source

Self-Powered Smart Textile Based on Dynamic Schottky Diode for Human-Machine Interactions. [PDF]

Adv Sci (Weinh), 2023
Deng P, Wang Y, Yang R, He Z, Tan Y, Chen Z, Liu J, Li T.   +7 more
europepmc   +1 more source

Current-voltage modeling of bilayer graphene nanoribbon Schottky diode

, 2011
This paper is all about the current-voltage modeling of Bilayer Graphene Nanoribbons (BGNRs) Schottky Diode. The metal semiconductor devices were used in the beginning of the year 1900s. We can make a point contact diode by touching a metallic whisker to
Mohammad Taghi Ahmadi, Rahmani, Komeil, Nahid Shayesteh, Ahmadi, Mohammad Taghi, Rahmani, Meisam, Ismail, Razali, Meisam Rahmani, Noraliah Aziziah Amin, Komeil Rahmani, Amin, Noraliah Aziziah, Razali Ismail, Ismail, Komeil Razali, Shayesteh, Nahid   +12 more
core   +1 more source

Green‐Synthesized Bi‐Doped PEI N‐GQDs Enabling Long‐Term Stable Silicon Heterojunction Photodetectors

Advanced Electronic Materials, EarlyView.
Green‐engineered BiNPs&PEI N‐GQDs enable dual‐emission p‐Si Schottky photodetectors with strong photoresponse, long‐term stability, and a simple scalable fabrication strategy, offering a promising route for sustainable optoelectronic and photosensing applications.
Zeynep Berktaş, Arun Kumar, Salar H. Sedani, Mustafa Yıldız, İlker Yıdız, Antonio Di Bartolomeo, Elif Orhan   +6 more
wiley   +1 more source

Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser. [PDF]

Sci Rep, 2023
Wang YH, Su JH, Wang TW, Lei ZY, Chen ZJ, Shangguan SP, Han JW, Ma YQ.   +7 more
europepmc   +1 more source

Design and simulation of a novel 1200 V 4H-SiC trench junction barrier Schottky diode

Based on the low cost fabricated 650 V and 1200 V 4H-SiC Schottky barrier diode (SBD), technology computer-aided design (TCAD) of SBD model was calibrated to fit the measurement data.
Lai, L, Liu, Z, Luo, L, Han, J, Xu, X, Linewih, H, Yang, X, Chen, X   +7 more
core   +1 more source

Fabrication and electrical characterization of transparent ZnOx-based Schottky diode

, 2020
En el presente trabajo se aborda la fabricación de microdiodos Schottky transparentes, realizando la unión de una película delgada de óxido de zinc (ZnOx) con una película delgada de óxido de indio dopado con estaño (ITO), la primera es usada como ...
ANGEL REGALADO CONTRERAS
core  

Balancing Injection and Short‐Channel Effects in Organic Permeable Base Transistors via Thickness Scaling

Advanced Electronic Materials, EarlyView.
Organic permeable base transistors are shown to benefit from balanced control of the semiconductor layers above and below the permeable base. Simulations and experiments indicate that the top semiconductor layer affects charge injection and lateral transfer length, while the bottom layer modulates the collector‐induced short‐channel effects.
Sun‐Woo Jo, Songhyun Kim, Sanghoon Park, Hanul Moon, Seunghyup Yoo   +4 more
wiley   +1 more source