Results 121 to 130 of about 470,842 (283)

Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

AIP Advances
The use of the low work function (4.5 eV) tungsten (W) as a rectifying contact was studied to obtain low on-voltages in W/Ga2O3 Schottky rectifiers and NiO/Ga2O3 heterojunction rectifiers that were simultaneously fabricated on a single wafer. The devices
Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton   +4 more
doaj   +1 more source

Multiband Microstrip Rectenna Using ZnO-Based Planar Schottky Diode for RF Energy Harvesting Applications. [PDF]

Micromachines (Basel), 2023
Kayed SI, Elsheakh DN, Mohamed HA, Shawkey HA.   +3 more
europepmc   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Investigation of Deep Spiking Neural Networks Utilizing Gated Schottky Diode as Synaptic Devices. [PDF]

Micromachines (Basel), 2022
Lee ST, Bae JH.
europepmc   +1 more source

Gas–Solid Interface‐Assisted Growth of Organic Semiconductor Single Crystals: Dimensions, Structures, Mechanisms, and Applications

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Gas–solid interface‐assisted growth strategies have unlocked precise control over crystal structure, morphology, dimension, and molecular packing. The obtained organic semiconductor single crystals represent the ideal candidates for high‐performance organic optoelectronic devices.
Tingyi Yan, Qing Tian, Jinwen Wang, Ke Jiang, Yage Han, Yuanzhuang Ren, Lingyun Li, Xiujuan Zhang, Jiansheng Jie   +8 more
wiley   +1 more source

State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz. [PDF]

Sensors (Basel), 2023
Yadav R, Ludwig F, Faridi FR, Klopf JM, Roskos HG, Preu S, Penirschke A.   +6 more
europepmc   +1 more source

ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices

Electron, EarlyView.
This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker, Adrien Baillard, Estelle Appert, Vincent Consonni   +3 more
wiley   +1 more source

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode. [PDF]

Materials (Basel), 2021
Deng X, Liu R, Li S, Li L, Wu H, Li X.
europepmc   +1 more source

Light‐Modulated Exchange Bias in Multiferroic Heterostructures

Electron, EarlyView.
In this article, exchange bias and magnetization are modulated with visible light at room temperature in PMN‐PZT/FeGa/IrMn multiferroic heterostructures. Photostrictive effect is the main mechanism leading to the modulation of magnetic anisotropy and interfacial exchange bias coupling between the ferromagnetic and antiferromagnetic layers.
Huan Tan, Zheng Ma, Cynthia Bou Karroum, Matthieu Liparo, Jean‐Philippe Jay, David Spenato, David T. Dekadjevi, Luís Martínez Armesto, Alberto Quintana, Jordi Sort   +9 more
wiley   +1 more source

Control of Ni/β-Ga₂O₃ Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer. [PDF]

Nanomaterials (Basel), 2022
Labed M, Sengouga N, Rim YS.
europepmc   +1 more source