Results 101 to 110 of about 470,842 (283)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

2D Materials Empowered Radar Absorbing Materials: A Review

Advanced Electronic Materials, EarlyView.
Recent progress in 2D materials empowered radar absorbing materials (RAMs) is reviewed, highlighting four key structural design strategies that enhance electromagnetic wave absorption. Porous structures, heterogeneous interfaces, printed metamaterials, and tunable metasurfaces are compared in terms of their governing physics, fabrication complexity ...
Yujie Zhong, Shuncong Zhong, Yi Huang, Shan‐Tung Tu, Minghong Wu   +4 more
wiley   +1 more source

Scaling of nano-Schottky-diodes

Applied Physics Letters, 2002
A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with decreasing
Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)   +2 more
openaire   +5 more sources

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

Structure and Spectroscopic Characterisation of Phenanthroline‐Based Iodobismuthate(III) Complexes Utilised for Raw Acoustic Signal Classification

Advanced Intelligent Discovery, EarlyView.
Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz, Gisya Abdi, Andrzej Sławek, Marlena Gryl, Konrad Szaciłowski   +4 more
wiley   +1 more source

Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

, 2017
The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single ...
Qiming He, W. Mu, Hang Dong, S. Long, Z. Jia, H. Lv, Qi Liu, M. Tang, X. Tao, Ming Liu   +9 more
semanticscholar   +1 more source

Surface Charges Guided Quasi‐TEM‐mode Microwave Propagation along Dielectric Nanowire

Advanced Physics Research, EarlyView.
According to Maxwell's equations, a single‐conductor transmission line cannot allow TEM‐mode electromagnetic wave propagation, however, this is based upon the assumption that dielectric material is isolated from the environment. In practice, surface electrostatic charges widely existed in nano‐materials with large surface‐to‐volume ratio.
BoYan Xu, Kaibo Zhang, Haojie Gao, Zhiyuan Gao, Kai Wang, Lihuan Zhao, Qi Yang, Bifeng Cui   +7 more
wiley   +1 more source

Schottky-Diode Design for Future High-Speed Telecommunications. [PDF]

Nanomaterials (Basel), 2023
Wong CH, Lam LF, Hu X, Tsui CP, Zatsepin AF.   +4 more
europepmc   +1 more source

Carbon/Silicon Heterojunction Solar Cells: Status and Perspectives

Carbon Energy, EarlyView.
This review examines carbon/silicon heterojunctions and highlights the advantages of carbon materials in terms of cost‐effectiveness, low‐temperature processing, and scalability. It adopts a comprehensive approach to bridge the gap between laboratory‐scale innovations and industrial‐scale applications, incorporating current state‐of‐the‐art findings ...
Randi Azmi, Adi Prasetio, Muhammad Iqbal Syauqi, Yanping Liu, Arsalan Razzaq, Nandang Mufti, Stefaan De Wolf   +6 more
wiley   +1 more source

Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics

Nanomaterials
In this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD helps inactivate the parasitic body diode
Peiran Wang, Chenglong Li, Chenkai Deng, Qinhan Yang, Shoucheng Xu, Xinyi Tang, Ziyang Wang, Wenchuan Tao, Nick Tao, Qing Wang, Hongyu Yu   +10 more
doaj   +1 more source