Results 71 to 80 of about 470,842 (283)
Compact high‐efficiency c‐band rectifier with high input power for microwave power transmission
This letter presents a novel C‐band rectifier that is capable of handling high input power. The rectifier consists of a Schottky diode, an impedance matching circuit with a compensation microstrip structure, and an output filter with harmonic suppression
Hongzheng Zeng, Yuzhu Tang, Yunpeng Liu
doaj +1 more source
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi +7 more
wiley +1 more source
Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes
In this paper, the development of two high power 220 GHz frequency triplers is proposed. The GaAs Schottky diodes with six nodes are applied to realize high efficiency 220 GHz tripler, while the application of GaN Schottky diodes with eight nodes is ...
Yilin Yang +6 more
doaj +1 more source
220 GHz outdoor wireless communication system based on a Schottky-diode transceiver
In this paper, an all-electronic outdoor wireless communication system based on a Schottky-diode transceiver at 220GHz is reported. The transceiver is implemented by the use of in-house designed 220GHz lownoise Schottky diode-based subharmonic mixers ...
Zhe Chen +5 more
semanticscholar +1 more source
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Simulation Based Analysis of Temperature Effect on Breakdown Voltage of Ion Implanted Co/n-Si Schottky Diode [PDF]
In semiconductor devices, breakdown voltage variation with temperature is a very significant study, since the reliability and performance of semiconductor devices especially depends upon the temperature.
Vibhor Kumar +3 more
doaj
Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere.
Ivan Shtepliuk +5 more
doaj +1 more source
A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky Diodes
This paper describes the design and demonstration of a 135−190 GHz self-biased broadband frequency doubler based on planar Schottky diodes. Unlike traditional bias schemes, the diodes are biased in resistive mode by a self-bias resistor; thus, no ...
Chengkai Wu +5 more
doaj +1 more source
Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo +12 more
wiley +1 more source

