Results 41 to 50 of about 470,842 (283)
60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
Sensors, 2021 A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the ...
Razvan Pascu +7 more
doaj +1 more source
Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
IEEE Transactions on Nuclear Science, 2018 Ion-induced degradation and catastrophic failures in high-voltage SiC junction barrier Schottky power diodes are investigated. The experimental results agree with earlier data showing discrete jumps in leakage current for individual ions and show that ...
A. Witulski +9 more
semanticscholar +1 more source
Air-bridged Schottky diodes for dynamically tunable millimeter-wave metamaterial phase shifters
Scientific Reports, 2021 A low loss metamaterial unit cell is presented with an integrated GaAs air-bridged Schottky diode to produce a dynamically tunable reflective phase shifter that is capable of up to 250° phase shift with an experimentally measured average loss of 6.2 dB ...
Evangelos Vassos +5 more
doaj +1 more source
Near ultraviolet enhanced 4H-SiC Schottky diode
, 2019 Silicon carbide Schottky diodes with thick i-regions are reported. Compared with previously reported p-i-n photodiodes, a shift of the absorption peak from 270 nm to 350 nm was observed.
Yang Shen +10 more
semanticscholar +1 more source
Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation
Walailak Journal of Science and Technology, 2018 Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with
Doldet TANTRAVIWAT +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.This work demonstrates a scalable, low‐temperature synthesis strategy that combines a thioacetamide (TA)‐based dual sulfur source with CdS chlorination, enabling the formation of high‐quality Sb2S3 with a reduced open‐circuit voltage loss, resulting in improved device efficiency.
Vijay C. Karade +16 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2020 A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed.
Gheorghe Brezeanu +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Metasurfaces and other structured photonic environments can dramatically modify the absorption and/or light emission of semiconductors. However, the consequences of these changes on the temperature of the system are not well understood. The authors address this problem for colloidal nanocrystals and leverage their findings to convert light into ...
Hugo Kowalczyk +7 more
wiley +1 more source
Current‐voltage model of a graphene nanoribbon p‐n junction and Schottky junction diode
IET Circuits, Devices and Systems, 2022 This work presents a simplified analytical model of a p‐n junction diode based on a graphene nanoribbon (GNR) and a unique type of Schottky diode based on metallic graphene and semi‐conducting GNRs.
Samira Shamsir +3 more
doaj +1 more source
Electrical Rectifying and Photosensing Property of Schottky Diode Based on MoS2.
ACS Applied Materials and Interfaces, 2018 Heterojunction based on two-dimensional (2D) layered materials is an emerging topic in the field of nanoelectronics and optoelectronics. Here, molybdenum sulfide (MoS2)-based Schottky diodes were fabricated using the field-effect transistor configuration
Jing-Yuan Wu +4 more
semanticscholar +1 more source