Results 91 to 100 of about 14,138 (303)
Comparison of 4H-SiC Radiation Detectors Based on PN Junctions and Schottky Contacts [PDF]
EPJ Web of ConferencesSilicon carbide (SiC) is a material that shows great promise in the fabrication of semiconductor radiation detectors intended for harsh environments, such as space missions, nuclear reactors, or direct neutron detection. This is primarily attributable to
Kurucová Nikola +5 more
doaj +1 more source
Electric Field Induced Schottky to Ohmic Contact Transition in Fe3GeTe2/TMDs Contacts
, 2023 Although the two-dimensional transition metal dichalcogenides (TMDs) present excellent electrical properties, the contact resistance at the interface of metal/TMDs limits the device performance.
Litao Sun +5 more
core +1 more source
Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
, 2010 [[abstract]]The effects of composition of a-SiGe channel layer and annealing temperature on the electrical performances of the inverted-staggered thin-film transistors with Sb/Al binary alloy Schottky source/drain contact had been studied.
Cha-Shin Lin; Rong-Hwei Yeh; Inn-Xin Li; Jyh-Wong Hong
core
High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact [PDF]
, 2019 A high-performance Schottky diode based on a 600-μm-thick Cr-doped β-Ga2O3 single crystal has been fabricated using SnOx as the Schottky contact. The SnOx film was deposited in argon/oxygen mixture gas to ensure an oxygen-rich stoichiometry in Ga2O3 near
Du, Lulu +10 more
core +1 more source
Advanced Materials Interfaces, EarlyView.An all‐in‐fiber broadband polarization photodetector is demonstrated by integrating a PdSe2/2H‐MoTe2 van der Waals heterostructure onto a fiber endface. The device exhibits broadband response spanning 532 nm to 1630 nm, a fast response time of 59 µs, and a polarization ratio of 1.99. This work demonstrates a promising hardware strategy for polarization
Zexing Zheng +11 more
wiley +1 more source
The influence of Schottky contact metals on the strain of AlGaN barrier layers
, 2008 Ir and Ni Schottky contacts on strained Al0.25Ga0.75N/GaN heterostructures, and the Ni Schottky contact with different areas on strained Al0.3Ga0.7N/GaN heterostructures have been prepared.
Corrigan, TD +7 more
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Stabilizing Electrochemical Interfaces With Multifunctional Cobalt Nitride Layers
Advanced Materials Interfaces, EarlyView.Cobalt nitrides emerged recently as an interesting class of earth‐abundant oxygen evolution catalysts. Herein, plasma‐enhanced atomic layer deposition is used to synthesize multifunctional cobalt nitride layers that simultaneously protect and catalytically activate photoelectrode surfaces.
Matthias Kuhl +7 more
wiley +1 more source
Spintronic and plasmonic applications of electrodeposition on semiconductors
, 2009 In this thesis, metal electrodeposition on semiconductor substrates is investigated. We show that electrodeposition of metals on n-type Si and Ge is an excellent method to create Schottky barriers and that this method has a number of unique advantages ...
Li, Xiaoli, Li, X.
core
Gas‐Selective Remote Plasma Engineering of WO3 Photoanodes for Solar Water Splitting
Advanced Materials Interfaces, EarlyView.Gas‐selective remote plasma treatment tunes the near‐surface defect chemistry of WO3 photoanodes without altering their bulk structure. Ar plasma generates the most oxygen‐vacancy‐rich surface and the highest W5+ content, delivering the strongest photocurrent.
Elham Jassemi Zargani +5 more
wiley +1 more source