Results 101 to 110 of about 1,741,103 (246)
Sharp edges schottky contact electric field simulation [PDF]
This paper reports investigation on effect of adding sharp edges to Schottky contact. Few studies suggested that sharp edge nanostructures produces high electric field which subsequently improve gas sensing performance on reversed biased mode.
Arsat, Rashidah @ Siti Saedah +4 more
core
Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald +3 more
wiley +1 more source
The influence of Schottky contact metals on the strain of AlGaN barrier layers
Ir and Ni Schottky contacts on strained Al0.25Ga0.75N/GaN heterostructures, and the Ni Schottky contact with different areas on strained Al0.3Ga0.7N/GaN heterostructures have been prepared.
Corrigan, TD +7 more
core
GaN metal-semiconductor-metal ultraviolet photodetector with IrO2 Schottky contact
Iridium oxide (IrO2) was used as the Schottky barrier materials of GaN metal-semiconductor-metal (MSM) ultraviolet photodetector. Annealing an Ir contact at 500 degreesC under O-2 ambient, the reverse leakage current density at -5 V reduced by the four ...
Kim, JK, Jeon, CM, Lee, JL, Jang, HW
core +1 more source
A sustainable polymer–carbon nanotube bilayer enables efficient near‐infrared photodetection in a simple lateral planar p–n junction thin‐film architecture. Thermal side‐chain cleavage enhances interfacial coupling, shifts the dominant photoresponse from 800 to 1000 nm, and substantially improves device performance.
Jenner H. L. Ngai +3 more
wiley +1 more source
Copper electroplating transforms lightweight 3D‐printed TPMS polymer lattices into effective electromagnetic shields. Topology, relative density, and conductive seed layer continuity govern copper penetration, electrical resistance, and attenuation. SEA consistently exceeds SER, while 35% RD Diamond lattice gives the best performance, reaching 48.72 dB
Aman Al Khatib +6 more
wiley +1 more source
The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact
Through the hydrothermal technique, we successfully deposited boron (B)-doped zinc oxide nanorods (ZnO NRs) onto a polyethylene terephthalate (PET)/graphene (GR) flexible substrate, creating a B-ZnO/PET/GR Schottky contact.
Jianhua Zhang +3 more
doaj +1 more source
A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact
Among various polymorphic phases of gallium oxide (Ga2O3), α-phase Ga2O3 has clear advantages such as its heteroepitaxial growth as well as wide bandgap, which is promising for use in power devices.
Seung Yoon Oh +6 more
doaj +1 more source
Sidegating effect on Schottky contact in ion-implanted GaAs
The sidegating effect on the Schottky barrier in ion-implanted GaAs was investigated with capacitance-voltage profiling at various negative substrate voltages.
Wu J +5 more
core
Recent Advances in Light‐Addressable Electrochemistry for Spatially Resolved Applications
This comprehensive review highlights light‐addressable electrochemistry as a powerful tool that uses light to control localized chemical reactions on unstructured semiconductor surfaces. The work evaluates advanced strategies to optimize electrode materials for enhanced spatial resolution and stability. Furthermore, it showcases diverse applications in
Nhi Trang Vo +2 more
wiley +1 more source

