Results 101 to 110 of about 14,138 (303)
Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket. [PDF]
Discov Nano, 2023 Lin JT, Lin KP, Cheng KM.
europepmc +1 more source
Sidegating effect on Schottky contact in ion-implanted GaAs
, 1995 The sidegating effect on the Schottky barrier in ion-implanted GaAs was investigated with capacitance-voltage profiling at various negative substrate voltages.
Wu J +5 more
core
Advances in Halide Perovskites for Photon Radiation Detectors
Advanced Materials Technologies, EarlyView.This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang +3 more
wiley +1 more source
Ultrafast Self‐Driven WSe2 Photodetectors with Bottom Schottky Contacts
Advanced ScienceConventional top‐contact two dimensional (2D) Schottky photodetectors suffer from light shadowing and contact damage, leading to Fermi‐level pinning and performance degradation.
Jian Li +10 more
doaj +1 more source
Advanced Materials Technologies, EarlyView.Flexible Chitosan‐glycerol sensor integrated with porous laser‐induced graphene (LIG) electrodes enable room‐temperature chemiresistive detection of ammonia (NH3) and proof‐of‐concept detection of fish spoilage. ABSTRACT We report a metal‐free sensor platform combining laser induced graphene (LIG) electrodes with drop‐deposited, glycerol‐plasticized ...
Mintesinot Tamiru Mengistu +9 more
wiley +1 more source
Thermally stable Ir Schottky contact on AlGaN/GaN heterostructure
, 2019 We report thermally stable Ir Schottky contacts on AlGaN/GaN heterostructure. The Schottky barrier height was increased from 0.68 to 1.07 eV, and the reverse leakage current dramatically decreased after annealing at 500 degreesC under O-2 ambient.
Jeon, CM, Lee, JL, Jang, HW
core +1 more source
Record Performance in Vertically Stacked, Solution‐Processed ZTO Schottky Diodes
Advanced Materials Technologies, EarlyView.Schottky diodes based on solution processed sustainable zinc—tin–oxide thin films present an eco‐friendly and versatile alternative to conventional CMOS based technologies. Beyond state‐of‐the‐art performance for vertically stacked solution‐based oxide diodes was achieved, including rectification ratios exceeding nine orders of magnitude, and intrinsic
Carlos Silva +10 more
wiley +1 more source
Schottky contact of zinc onp-germanium
Bulletin of Materials Science, 1997 Metal-semiconductor contacts are drawing increasing attention due to their potential for applications in devices and integrated circuits. Experimentally, lower barrier heights have been reported more often for metallic contacts onp-type semiconductors. Here we report our results regarding barrier height of zinc onp-type germanium.
K K Patel, K D Patel, R Srivastava
openaire +2 more sources
Rectifying Characteristics of Thermally Treated Mo/SiC Schottky Contact
, 2019 The rectifying characteristics of a Mo/SiC Schottky contact fabricated by facing targets sputtering system were investigated through current–voltage measurement.
Ki Hyun Kim +2 more
core +1 more source
Advanced Materials Technologies, EarlyView.ABSTRACT Molybdenum disulfide (MoS2) has attracted attention as a promising material due to the growing demand for environmentally friendly, cost‐effective, and efficient water treatment techniques. With its physicochemical characteristics, this stratified bidimensional material allows it to be highly effective in adsorption and catalytic performance ...
Pariksha Bishnoi +4 more
wiley +1 more source