Results 111 to 120 of about 1,741,103 (246)

Reducing the Barrier Height in Organic Transistors

open access: yesAdvanced Electronic Materials
Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors.
Arash Ghobadi   +7 more
doaj   +1 more source

Electrically Reconfigurable Optical Initialization of Spin Valley Polarization in Monolayer WS2 Enabled by Switchable Dual‐Mode Liquid Crystal Lasers

open access: yesAdvanced Optical Materials, EarlyView.
This work presents an electrically controllable approach to spin–valley polarization in monolayer WS2 by integrating it with a dual‐mode liquid crystal laser. Applying an external field triggers phase transitions that switch the laser emission between helicity‐defined band‐edge lasing and unpolarized random lasing.
Yu‐Chuan Tsao   +3 more
wiley   +1 more source

Overcoming the Trade‐Off Between Magnetic Coupling and Electrical Insulation in Soft Magnetic Materials via Nanochain Engineering

open access: yesAdvanced Science, EarlyView.
This study employs a nanochain engineering approach combined with an in situ oxidation strategy to fabricate self‐insulating iron‐based magnetic nanochains, addressing the challenge of balancing magnetic coupling and electrical insulation in soft magnetic materials.
Dingrong Zuo   +8 more
wiley   +1 more source

Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN. [PDF]

open access: yesNanomaterials (Basel), 2020
Lee M   +7 more
europepmc   +1 more source

Recent Advances in Laser‐Induced Graphene‐Based Gas Sensors: From Sensing Mechanisms to Biomedical Applications

open access: yesAdvanced Science, EarlyView.
Laser‐induced graphene (LIG) provides a scalable, laser‐direct‐written route to porous graphene architecture with tunable chemistry and defect density. Through heterojunction engineering, catalytic functionalization, and intrinsic self‐heating, LIG achieves highly sensitive and selective detection of NOX, NH3, H2, and humidity, supporting next ...
Md Abu Sayeed Biswas   +6 more
wiley   +1 more source

Highly Flexible and Conformable ZnO/FeGa Magnetoelectric Heterostructures for Skin wound Healing

open access: yesAdvanced Science, EarlyView.
The magnetic field‐induced electric field generated by a highly flexile ZnO(piezoelectric)/FeGa(magnetostrictive) magnetoelectric heterostructure embedded in the low Young's modulus elastomer PDMS has been used to stimulate the wound healing processes.
Filippos Perdikos   +17 more
wiley   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

open access: yesAdvanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang   +5 more
wiley   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

open access: yesAdvanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen   +9 more
wiley   +1 more source

Physical foundation of a recently proposed schottky-contact model

open access: yes, 2011
The goal of this correspondence is to supplement the Schottky-contact model proposed in "A Generalized Drift-Diffusion Model for Rectifying Schottky Contact Simulation," IEEE Transactions on Electron Devices, vol. 57, no.
Schröder, Dietmar
core   +1 more source

Versatile Contact Engineering on β‐Ga2O3 Using EGaIn for Schottky Diodes and MESFET Applications

open access: yesAdvanced Electronic Materials
Beta gallium oxide (β‐Ga2O3) has emerged as a promising ultrawide bandgap n‐type semiconductor for large‐area circuit integration and high‐power device applications in the field of 5G and AI technology.
Gyeong Seop Kim   +4 more
doaj   +1 more source

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