Results 111 to 120 of about 14,138 (303)

Janus MoSH/WSi₂N₄ van der Waals Heterostructure: Two-Dimensional Metal/Semiconductor Contact

Molecules
Constructing heterostructures from already synthesized two-dimensional materials is of significant importance. We performed a first-principles study to investigate the electronic properties and interfacial characteristics of Janus MoSH/WSi2N4 van der ...
Yongdan Wang, Xiangjiu Zhu, Hengshuo Zhang, Shitong He, Ying Liu, Wenshi Zhao, Huilian Liu, Xin Qu   +7 more
doaj   +1 more source

A modified Schottky model for graphene-semiconductor (3D/2D) contact: A combined theoretical and experimental study

, 2016
In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum ...
Shi-Jun Liang, Adam, Shaffique, Shaffique Adam, Liang, Shi Jun, Wei Hu, A. Di Bartolomeo, Hu, Wei, DI BARTOLOMEO, Antonio, Lay Kee Ang, Ang, Lay Kee   +9 more
core   +1 more source

Controlling Film Formation in Inkjet‐printed MAPbBr3 Through Graphene Incorporation for Enhanced Photodetection

Advanced Materials Technologies, EarlyView.
This work highlights the impact of incorporating graphene nanoflakes into precursor inks of MAPbBr3 for inkjet‐printed optoelectronic device applications. A substantial modification of the crystallization dynamics is reported despite miniscule concentrations.
Kenneth Lobo, Javier Bartolomé, María Vila, Giovanni Vescio, Raúl I. Sánchez‐Alarcón, Junaid Khan, Júlia Marí Guaita, Francisco Palacio Bonet, Juan P. Martínez‐Pastor, Sergi Hernández, Blas Garrido, Carmen Coya, Albert Cirera   +12 more
wiley   +1 more source

The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact

Materials Research Express
Through the hydrothermal technique, we successfully deposited boron (B)-doped zinc oxide nanorods (ZnO NRs) onto a polyethylene terephthalate (PET)/graphene (GR) flexible substrate, creating a B-ZnO/PET/GR Schottky contact.
Jianhua Zhang, Yapeng Li, Jiqiang Jia, Zhaoyu Luo   +3 more
doaj   +1 more source

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

Advanced Materials Technologies, EarlyView.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi, Ho Jin Lee, Seok Hee Hong, Jae Seong Park, Chan Ho Ryu, Kyeong Heon Kim, Tukaram D. Dongale, Tae Geun Kim   +7 more
wiley   +1 more source

Overcoming the Trade‐Off Between Magnetic Coupling and Electrical Insulation in Soft Magnetic Materials via Nanochain Engineering

Advanced Science, EarlyView.
This study employs a nanochain engineering approach combined with an in situ oxidation strategy to fabricate self‐insulating iron‐based magnetic nanochains, addressing the challenge of balancing magnetic coupling and electrical insulation in soft magnetic materials.
Dingrong Zuo, Lichen Liu, Haibo Ke, Rongsheng Bai, Huaping Ding, Jing Zhou, Zhenxiang Cheng, Peng Yu, Weihua Wang   +8 more
wiley   +1 more source

Contact effect on the current-voltage characteristic of graphene nanoribbon based schottky diode

, 2015
This paper presents the study of the current-voltage characteristic of graphene nanoribbon based Schottky diode using analytical method. The work presents a simple model to analyse the current-voltage characteristic in the function of Schottky barrier ...
Ahmadi, M. Taghi, Ismail, Razali, Kiat, Wong King   +2 more
core   +1 more source

Metal‐Enhanced Charge Transport and its Mechanism in Atomically Precise Ruthenium Single‐Molecule Devices

Advanced Science, EarlyView.
An atomically precise platform was developed for investigating single‐molecule charge transport. This innovative platform enables the creation of highly uniform molecular devices using ruthenium‐based molecules. It reveals a significant enhancement in molecular conductance due to the metallic ruthenium center and a unique barrier‐lowering effect during
Jie Guo, Qinghua Gao, Ping Duan, Cong Zhao, Huimin Wen, Xiaoyan He, Lucie Norel, Yuzhe Zhang, Chunwen Wang, Wu Zhou, Xinyue Chang, Ju Wang, Stéphane Rigaut, Mingliang Li, Chuancheng Jia, Xuefeng Guo   +15 more
wiley   +1 more source

Reducing the Barrier Height in Organic Transistors

Advanced Electronic Materials
Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors.
Arash Ghobadi, Cherian J. Mathai, Jacob Cook, Guang Bian, Salahuddin Attar, Mohammed Al‐Hashimi, Shubhra Gangopadhyay, Suchismita Guha   +7 more
doaj   +1 more source

Ab-initio study of NiGe/Ge Schottky contact

, 2017
Germanium is a promising material for next-generation electronic and photonic devices, and engineering ohmic contacts to it can be expected to be a key challenge therein.
LODHA, S, GANGULY, S, Dhirendra Vaidya, Saurabh Lodha, VAIDYA, D, Swaroop Ganguly   +5 more
core   +1 more source