Results 81 to 90 of about 1,741,103 (246)
Advanced Materials, EarlyView.Alkoxy chain length drives a continuous transition from eclipsed AA to a serrated, slipped AA* configuration over Co‐porphyrin COFs. A moderate slip both contracts the pore channel to enrich CO2 and suppress hydrogen evolution, and enhances collective high‐spin of Co sites, which delivers a record CO production rate with high selectivity.
Jie He +8 more
wiley +1 more source
Comparison of 4H-SiC Radiation Detectors Based on PN Junctions and Schottky Contacts [PDF]
EPJ Web of ConferencesSilicon carbide (SiC) is a material that shows great promise in the fabrication of semiconductor radiation detectors intended for harsh environments, such as space missions, nuclear reactors, or direct neutron detection. This is primarily attributable to
Kurucová Nikola +5 more
doaj +1 more source
Pt/ZnO Schottky nano-contact for piezoelectric nanogenerator
, 2010 The electrical characteristics of Pt Schottky contact to ZnO nanorod were studied with atomic force microscopy. A Pt tip was placed on the top end of a ZnO nanorod, forming a Pt/ZnO Schottky nano-junction.
Wu DM (吴东岷) +5 more
core
Advanced Materials, EarlyView.A hierarchical flexible ceramic nanofiber membrane integrates a La‐stabilized ZrO2 scaffold with superhydrophobic UiO‐66‐NH2/CdS heterojunctions. The gas–liquid–solid interfacial architecture sustains vapor‐selective desalination, visible‐light charge separation, and rapid H2 extraction, enabling simultaneous freshwater production and photocatalytic ...
Pengfei Lin +9 more
wiley +1 more source
Engineering Slow-Carrier Interfacial Recombination Enables Tailored Spectral Response. [PDF]
Adv Sci (Weinh)This work demonstrates that weak‐drift slow carriers are preferentially captured at generic semiconductor surfaces/interfaces and recombine. This process is manipulated to achieve tailored spectral response. A tens of µm‐wide depletion region is created to observe surface collection rates for photocarriers generated at different positions.
Zhang Y +5 more
europepmc +2 more sources
IrO2 Schottky contact on n-type 4H-SiC
, 2018 A thermally stable IrO2 Schottky contact on n-type 4H-SiC was achieved by annealing an Ir contact under O-2 ambient. The IrO2 contact exhibited a high Schottky barrier height of 2.22 eV and low reverse leakage current.
Lee, JL, Han, SY, Jang, HW
core +1 more source
Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing
Advanced Materials, EarlyView.Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris +7 more
wiley +1 more source
Computation‐Less, Bias‐Free, and Ultra‐Broadband Photodetector for On‐Chip Edge Extraction
Advanced Materials, EarlyView.A computation‐less, bias‐free, and ultra‐broadband photodetector directly converts local optical‐intensity gradients into signed photocurrents through a position‐dependent bi‐directional photoresponse. This intrinsic physical sensing mechanism enables single‐pixel edge extraction from the near‐infrared to the long‐wave infrared at room temperature ...
Jintao Fu +8 more
wiley +1 more source
Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket. [PDF]
Discov Nano, 2023 Lin JT, Lin KP, Cheng KM.
europepmc +1 more source
Advanced Materials, EarlyView.Molecular doping redistributes the internal electric field in organic photodetectors, providing a new degree of freedom to spatially control carrier transport and collection. Simulations and experiments reveal distinct transport pathways for injected and photogenerated carriers, enabling low dark current under reverse bias and wavelength‐selective ...
Jingwei Yi +15 more
wiley +1 more source