Results 41 to 50 of about 1,741,103 (246)

Numerical simulation of the current-voltage characteristics of the inhomogeneous Schottky diodes

Lietuvos Matematikos Rinkinys, 2002
In this paper we offer methods for estimation parameters of diodes of the Schottky by compa­ring outcomes of calculations and experiment. Definite some parameters of contact area: allocation of a active impurity in this area, to define more precisely a ...
Albertas Pincevičius, Rimantas-Jonas Rakauskas   +1 more
doaj   +3 more sources

Electronic transport, field effect and doping in pentacene nanorods and monolayer thin film prepared by combination of nano-fabrication and self-assembly [PDF]

, 2008
The transport in organic semiconductors is investigated on the nanometer scale. Field effect transistor with device-active layers in the monolayer (ML) range are characterized in-situ right after the controlled deposition of pentacene.
Vanoni, Claudio
core   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Supersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts

, 2010
A Schottky barrier can be formed at the interface between a metal electrode and a semiconductor. The current passing through the metal-semiconductor contact is mainly controlled by the barrier height and barrier width.
Te-Yu Wei, Jun Zhou, Zhou Li, Youfan Hu, Wang, Zhong-Lin, Ping-Hung Yeh, Zhong Lin Wang, Hu, Youfan; Zhou, Jun; Yeh, Ping-Hung; Li, Zhou; Wei, Te-Yu; Wang, Zhong-Lin   +7 more
core   +1 more source

Fabrication and characterization of optical float-zone (100) β-Ga2O3 Schottky diodes [PDF]

AIP Advances
We conducted a rapid fabrication of Ga2O3 vertical Schottky barrier diodes using Ti/Au for ohmic contacts and Ni/Au for Schottky contacts on a (100) Sn-doped β-Ga2O3 grown by the optical float-zone method and analyzed the device characteristics and ...
Zubear Nowshad Pasha, Vijayakumar Subramanian, Ved Krishna, Konstantinos Floros, Ingo Ludtke, Shanthi Subashchandran, S. Ganesamoorthy, Naresh Gunasekar   +7 more
doaj   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source

First-Principles Study of Biaxial Strain Effects on Schottky Barrier Modulation in Graphene/ZnSe Heterostructures

Nanomaterials
Reducing the Schottky barrier at the metal–semiconductor interface and achieving Ohmic contact is crucial for the development of high-performance Schottky field-effect transistors. This paper investigates the stability, interface interactions, interlayer
Guowang Pang, Xue Wen, Lili Zhang, Yineng Huang   +3 more
doaj   +1 more source

Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites

Advanced Functional Materials, EarlyView.
Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto, Javier Zamudio‐García, Abraham Sánchez‐Caballero, David Marrero‐López, Vincenzo Esposito   +4 more
wiley   +1 more source