Results 41 to 50 of about 14,138 (303)
Reconfigurable resistive switching devices based on individual tungsten trioxide nanowires
AIP Advances, 2013 In the two-terminal Au/WO3 nanowire/Au electronic device with two Schottky barriers, drifting of oxygen vacancies under strong electric field induced by the bias voltage applied at short distance will result in the effective width of the reverse biased ...
Jie Guo +8 more
doaj +1 more source
Green Energy & Environment, 2022 It is highly demanded to steer the charge flow in semiconductor for efficient photocatalytic environmental remediation. Herein, we designed an interfacial contact Ti3C2 MXene/ZnIn2S4 nanosheets (TC/ZISNS) Schottky heterostructure which could greatly ...
Sijian Li +6 more
doaj +1 more source
Electronic transport, field effect and doping in pentacene nanorods and monolayer thin film prepared by combination of nano-fabrication and self-assembly [PDF]
, 2008 The transport in organic semiconductors is investigated on the nanometer scale. Field effect transistor with device-active layers in the monolayer (ML) range are characterized in-situ right after the controlled deposition of pentacene.
Vanoni, Claudio
core +1 more source
Zero-dipole Schottky contact: Homologous metal contact to 2D semiconductor [PDF]
APL Electronic DevicesBand alignment of metal contacts to 2D semiconductors often deviates from the ideal Schottky–Mott (SM) rule due to non-idealities such as the formations of interface dipoles and metal-induced gap states (MIGS).
Yee Sin Ang, Shibo Fang, Che Chen Tho
doaj +1 more source
Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot [PDF]
Журнал нано- та електронної фізики, 2016 The current-voltage (I-V) characteristics of In/p-Si Schottky barrier contact were measured over the temperature range 230-360 K with interval of 10 K.
J.M. Dhimmar, H.N. Desai, B.P. Modi
doaj +1 more source
The operating mechanism of Schottky-gate nanosensors [PDF]
, 2012 The highly sensitive nanowire-based Schottky-gate nanosensors for detecting UV, bio-molecules, and gas sensing were demonstrated. The operating mechanism of the Schottky-gate nanosensors is totally distinct from the conventional Ohmic contacted ...
葉炳宏 +1 more
core +1 more source
Exploring Curvature Effects in Direct‐Written 3D Curved Hollow Magnetic Nanoshells
Advanced Functional Materials, EarlyView.Fabricated by a hybrid FEBID/CVD method, 3D PtC/Co3Fe core–shell heterostructures with engineered curvature and shell thickness exhibit complex reversal modes with axially symmetric N'eel‐type domain walls. XMCD‐PEEM combined with full‐scale micromagnetic simulations reveal how curvature and thickness govern the domain wall energy landscape and shape ...
Oleksii M. Volkov +10 more
wiley +1 more source
Supersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts
, 2010 A Schottky barrier can be formed at the interface between a metal electrode and a semiconductor. The current passing through the metal-semiconductor contact is mainly controlled by the barrier height and barrier width.
Te-Yu Wei +7 more
core +1 more source
Advanced Functional Materials, EarlyView.Moiré band engineering in graphene/hexagonal boron nitride–based superlattices unlocks van Hove singularities (VHSs) for terahertz (THz) optoelectronics. Tuning the Fermi level near these singularities, associated with secondary neutrality points (SNPs), enhances the photothermoelectric response.
Leonid Elesin +16 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Self‐assembled monolayers (SAMs) are promising hole‐transporting materials for organic photovoltaics (OPVs), but suffer from self‐aggregation and poor large‐area uniformity. We find that interfacial modification using nicotinic hydrazide can eliminate the residual SAM aggregates by forming energetically favorable complexes, yielding uniform SAM.
Seongwon Yoon +10 more
wiley +1 more source