Results 21 to 30 of about 1,741,103 (246)

Schottky barrier heights and electronic transport in Ga2O3 Schottky diodes

Materials Research Express, 2023
The Schottky contact, formed at the interface between a metal and a semiconductor, is instrumental in defining the electrical properties of Schottky barrier diodes (SBDs).
Min-Yeong Kim, Dong-Wook Byun, Geon-Hee Lee, Sujitra Pookpanratana, Qiliang Li, Sang-Mo Koo   +5 more
doaj   +1 more source

The dependence of Schottky junction (I–V) characteristics on the metal probe size in nano metal–semiconductor contacts

AIP Advances, 2018
We have studied the dependence of Schottky junction (I–V) characteristics on the metal contact size in metal–semiconductor (M–S) junctions using different metal nanoprobe sizes. The results show strong dependence of (I–V) characteristics on the nanoprobe
Moh’d Rezeq, Ahmed Ali, Shashikant P. Patole, Khouloud Eledlebi, Ripon Kumar Dey, Bo Cui   +5 more
doaj   +1 more source

Plasma-etch-free β-Ga2O3–NiO–PtOx merged PiN Schottky diode with high-voltage stress reliability [PDF]

APL Electronic Devices
A gallium oxide (Ga2O3)–nickel oxide (NiO) merged PiN Schottky (MPS) diode was fabricated using Ga flux plasma-free etch and platinum oxide (PtOx) contacts.
Marko J. Tadjer, Yuhao Zhang, Travis J. Anderson, Karl D. Hobart, Akito Kuramata, Geoffrey M. Foster, Bixuan Wang, Matthew Porter, Hannah N. Masten, Neeraj Nepal, Boyan Wang, Alan G. Jacobs, Yuan Qin, Joseph A. Spencer   +13 more
doaj   +1 more source

Influence of the reaction between water and ZnO on the properties of Au Schottky contacts and the photocatalytic activity of ZnO(0001) single crystals

Materials Research Express, 2022
Wet chemical treatment is a conventional surface cleaning method, and metal oxide photocatalysts are commonly used to decompose organic compounds in water.
Koji Abe
doaj   +1 more source

In-nSiC schottky photodiode ; Fabrication and Study [PDF]

Engineering and Technology Journal, 2008
In the present work , schottky photodiode have been mode on n-type SiCby depositing of thin layer of In . electrical characteristics included I-V(dark and illumination ) have been investigated .
Khalid Z. Yahiya, Ammar H. Jraiz, Abdulla Khudiar Abass   +2 more
doaj   +1 more source

Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts

IEEE Journal of the Electron Devices Society, 2017
Contact resistance and thermal degradation of metal-silicon contacts are major challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, in state ...
Max Stelzer, Moritz Jung, Franz Kreupl
doaj   +1 more source

Constructing Ti3C2 MXene/ZnIn2S4 heterostructure as a Schottky catalyst for photocatalytic environmental remediation

Green Energy & Environment, 2022
It is highly demanded to steer the charge flow in semiconductor for efficient photocatalytic environmental remediation. Herein, we designed an interfacial contact Ti3C2 MXene/ZnIn2S4 nanosheets (TC/ZISNS) Schottky heterostructure which could greatly ...
Sijian Li, Luhua Shao, Zhenfei Yang, Shu Cheng, Cong Yang, Yutang Liu, Xinnian Xia   +6 more
doaj   +1 more source

Reconfigurable resistive switching devices based on individual tungsten trioxide nanowires

AIP Advances, 2013
In the two-terminal Au/WO3 nanowire/Au electronic device with two Schottky barriers, drifting of oxygen vacancies under strong electric field induced by the bias voltage applied at short distance will result in the effective width of the reverse biased ...
Jie Guo, Yong Zhou, Huajun Yuan, Ding Zhao, Yanling Yin, Kuo Hai, Yuehua Peng, Weichang Zhou, Dongsheng Tang   +8 more
doaj   +1 more source

Zero-dipole Schottky contact: Homologous metal contact to 2D semiconductor [PDF]

APL Electronic Devices
Band alignment of metal contacts to 2D semiconductors often deviates from the ideal Schottky–Mott (SM) rule due to non-idealities such as the formations of interface dipoles and metal-induced gap states (MIGS).
Yee Sin Ang, Shibo Fang, Che Chen Tho
doaj   +1 more source

Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot [PDF]

Журнал нано- та електронної фізики, 2016
The current-voltage (I-V) characteristics of In/p-Si Schottky barrier contact were measured over the temperature range 230-360 K with interval of 10 K.
J.M. Dhimmar, H.N. Desai, B.P. Modi
doaj   +1 more source