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Materials and Processes for Schottky Contacts on Silicon Carbide [PDF]
Materials, 2021 Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are today essential elements in many applications of power electronics. In this context, the study of Schottky barriers on 4H-SiC is of primary importance, since a deeper understanding of the metal/4H-SiC interface is the prerequisite to improving the electrical ...
Vivona M, Giannazzo F, Roccaforte F
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Electron spin injection at a Schottky contact [PDF]
Physical Review B, 2002 We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy and semiconductor doping density. The effect of a spin-dependent interface resistance that results from a tunneling
Albrecht, J. D., Smith, D. L.
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IEEE Journal of the Electron Devices Society, 2020 A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed.
Gheorghe Brezeanu +5 more
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IEEE Journal of the Electron Devices Society, 2021 A 27 nm gate oxide thickness has been successfully used for manufacturing high performance 650V 4H-SiC planar-gate, inversion-channel power JBSFETs in a 6-inch commercial foundry with three (Linear, Hexagonal, and Octagonal) cell topologies.
Aditi Agarwal, Kijeong Han, B. J. Baliga
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Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study
npj 2D Materials and Applications, 2023 Metal contacts form one of the main limitations for the introduction of 2D materials in next-generation scaled devices. Through ab-initio simulation techniques, we shed light on the fundamental physics and screen several 2D and 3D top and side contact ...
Rutger Duflou +3 more
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Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge
IEEE Journal of the Electron Devices Society, 2023 Fermi-level pinning (FLP) at the metal/Ge interface makes it difficult to control the Schottky barrier height, which forces an ohmic behavior on p-Ge and a rectifying behavior on n-Ge.
Kenta Moto +5 more
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A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]
, 2010 We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bonani, Fabrizio +11 more
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Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
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Electrodeposition of Ni-Si Schottky barriers [PDF]
, 2005 Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities.
P.A.J. de Groot +13 more
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AIP Advances, 2022 Carbon nanotubes (CNTs) are promising materials for gas sensing because of their large specific area and high sensitivity to charge differentiation.
Shota Nakahara +5 more
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