Results 11 to 20 of about 1,741,103 (246)
Schottky Contact of Gallium on p-Type Silicon [PDF]
Журнал нано- та електронної фізики, 2011 The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for ...
B.P. Modi, K.D. Patel
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A Novel 183GHz Subharmonic Schottky Diode Mixer [PDF]
, 1992 PhDThe technique of microwave . limb sounding -from space represents a very powerful tool for determining the atmospheric processes involved in ozone depletion, the greenhouse effect, acid rain, etc..
Mann, Christopher Mark
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A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]
, 2010 We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bonani, Fabrizio +11 more
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High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs [PDF]
, 2009 Schottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage.
Husain, M.K., Li, X., de Groot, C.H.
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Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
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High-frequency performance of Schottky source/drain silicon pMOS devices [PDF]
, 2008 A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic
Snyder, J. +6 more
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AIP Advances, 2022 Carbon nanotubes (CNTs) are promising materials for gas sensing because of their large specific area and high sensitivity to charge differentiation.
Shota Nakahara +5 more
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Electrodeposition of Ni-Si Schottky barriers [PDF]
, 2005 Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities.
P.A.J. de Groot +13 more
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Formation CMOS Schemes on GaAs with Self-Aligned Nitride and Silicide Gates
Фізика і хімія твердого тіла, 2016 Advanced integrated logic circuits on GaAs are mainly based on the using of n-channel field-effect transistors with gate Schottky (MESFET). To create the complementary MESFET integrated circuits the main problem is quite small Schottky barrier height ...
S. P. Novosjadly +2 more
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Frontiers in Materials, 2020 Despite the intensive study on the promotion of device performance, the device physics regarding the effects of Schottky barrier on the charge injection in conjugated polymer transistors still need more discussions.
Yang Xu, Fanming Huang, Wenwu Li
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