Results 11 to 20 of about 14,138 (303)

Schottky Contact of Gallium on p-Type Silicon [PDF]

Журнал нано- та електронної фізики, 2011
The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for ...
B.P. Modi, K.D. Patel
doaj   +6 more sources

Tuneable Schottky contact of MoSi2N4/TaS2 van der Waals heterostructure [PDF]

Heliyon, 2023
The two-dimensional MoSi2N4 monolayer is an emerging semiconductor material that offers considerable promise due to its ultra-thin profile, tuneable mechanical properties, excellent optoelectronic properties and exceptional environmental stability.
Jinglin Xia, Yixiao Gu, Jun Mai, Tianyang Hu, Qikun Wang, Chao Xie, Yunkai Wu, Xu Wang   +7 more
doaj   +2 more sources

First-Principles Study of Biaxial Strain Effects on Schottky Barrier Modulation in Graphene/ZnSe Heterostructures [PDF]

Nanomaterials
Reducing the Schottky barrier at the metal–semiconductor interface and achieving Ohmic contact is crucial for the development of high-performance Schottky field-effect transistors. This paper investigates the stability, interface interactions, interlayer
Guowang Pang, Xue Wen, Lili Zhang, Yineng Huang   +3 more
doaj   +2 more sources

Silicon Nanowire-Based Schottky Diodes for Enhanced Temperature Sensing and Extended Operable Range [PDF]

Sensors
This paper analyzes microstructural layout and electrical behavior of silicon nanowire-based Schottky diodes, for use as wide-domain temperature sensors.
Gheorghe Pristavu, Razvan Pascu, Melania Popescu, Monica Simion, Cosmin Romanitan, Iuliana Mihalache, Florin Draghici, Gheorghe Brezeanu   +7 more
doaj   +2 more sources

Analytical Photoresponses of Schottky‐Contact MoS₂ Phototransistors

Small
AbstractHigh‐gain photodetectors based on 2D semiconductors have been extensively investigated in the past decades. However, the underlying mechanism remains in dispute without a proper analytical theory. On one side, the classical photogain theory is not applicable, as it was derived on two misplaced assumptions.
Jianyong Wei, Yumeng Liu, Yizhuo Wang, Kai Li, Zhentao Lian, Maosong Xie, Xinhan Yang, Seyed Saleh Mousavi Khaleghi, Fuxing Dai, Weida Hu, Xuejiao Gao, Rui Yang, Yaping Dan   +12 more
core   +5 more sources

Tunable Schottky barrier in van der Waals heterojunction composed of graphene and SiCP4 from first principle calculations

Results in Physics, 2023
The contact type between graphene and semiconducting two-dimensional materials is a crucial factor in determining the performance of nanoscale electronic devices based on two-dimensional materials. Recently, SiCP4 is proposed to have high charge mobility
Shaofeng Zhang, Zhaowu Wang
doaj   +1 more source

Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure

AIP Advances, 2021
A graphene Schottky contact was fabricated on an AlGaN/GaN heterostructure and subsequently analyzed. The calculated and experimentally measured Schottky barrier heights (SBHs) determined using the theoretical Schottky–Mott model, the thermionic emission
Bhishma Pandit, Jaeho Kim, Jaehee Cho
doaj   +1 more source

Tunable Contact Types and Interfacial Electronic Properties in TaS₂/MoS₂ and TaS₂/WSe₂ Heterostructures

Molecules, 2023
Following the successful experimental synthesis of single-layer metallic 1T-TaS2 and semiconducting 2H-MoS2, 2H-WSe2, we perform a first-principles study to investigate the electronic and interfacial features of metal/semiconductor 1T-TaS2/2H-MoS2 and 1T-
Xiangjiu Zhu, Hongxing Jiang, Yukai Zhang, Dandan Wang, Lin Fan, Yanli Chen, Xin Qu, Lihua Yang, Yang Liu   +8 more
doaj   +1 more source

Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure

Nanoscale Research Letters, 2020
Two-dimensional (2D) transition metal dichalcogenides with intrinsically passivated surfaces are promising candidates for ultrathin optoelectronic devices that their performance is strongly affected by the contact with the metallic electrodes.
Yu Lan, Li-Xin Xia, Tao Huang, Weiping Xu, Gui-Fang Huang, Wangyu Hu, Wei-Qing Huang   +6 more
doaj   +1 more source

On the ohmicity of Schottky contacts [PDF]

Semiconductors, 2016
The conditions under which Schottky contacts become ohmic are analyzed. Proceeding from classical concepts of the mechanisms of current flow, a generalized Schottky contact model is investigated. This model takes into account the thermionic current of majority charge carriers and the recombination current of minority carriers in Schottky contacts with ...
A. V. Sachenko, A. E. Belyaev, R. V. Konakova   +2 more
openaire   +1 more source