Results 41 to 50 of about 178 (144)
IET Power Electronics, Volume 18, Issue 1, January/December 2025.This work presents an overview of surface‐mounted devices (SMDs) and pin‐through‐hole (PTH) low‐voltage (tens of volts) MOSFETs for power electronics in industrial equipment. Efficiency and cost are analysed using Pareto front in a database of 200 MOSFETs, including PTH (TO220) and SMD (DPAK, D2PAK, TOLL, SuperSO8) packages.
Edemar O. Prado +7 more
wiley +1 more source
Theory of Superjunction Devices
, 2020 Since the first ideal specific resistance model by Fujihira in 1997 and the first commercial superjunction MOSFET by Infineon technology in 1998, the technology and the understanding of superjunction devices have been gradually progressed. Although Fujihira’s ideal model was developed to estimate the specific on-state resistance at a given cell pitch ...
openaire +2 more sources
Analog/RF and Distortion Characteristics of Recessed Superjunction AlGaN/GaN HEMTs
IET Circuits, Devices and SystemsIn this work, we investigate the impact of the recessed height of the i-gallium nitride (GaN) layer on the performance of superjunction AlGaN/GaN high electron mobility transistors (HEMTs).
Nahida Banu +2 more
doaj +1 more source
Analysis of Intrinsic Switching Losses in Superjunction MOSFETs Under Zero Voltage Switching
Energies, 2020 Switching losses of power transistors usually are the most relevant energy losses in high-frequency power converters. Soft-switching techniques allow a reduction of these losses, but even under soft-switching conditions, these losses can be significant ...
Maria R. Rogina +5 more
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IEEE Open Journal of Power Electronics, 2023 We compare the switching losses of four equivalent silicon and wide-bandgap 650 V power transistors operated in a hard-switched half-bridge configuration, switching 400 V at 40 A.
Daniel J. Rogers +5 more
doaj +1 more source
Advanced Materials Interfaces, Volume 11, Issue 33, November 25, 2024.Silicon Carbide The wide bandgap semiconductor material Silicon Carbide (SiC) is an attractive proposition to replace Silicon for the development of advanced novel power electronic devices, such as superjunction devices. Trench refill epitaxy (TFE) has been developed, where semiconductor processing techniques have been used to create microstructures in
Kelly Turner +8 more
wiley +1 more source
High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss
IEEE Journal of the Electron Devices Society, 2022 A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun +7 more
doaj +1 more source
physica status solidi (a), Volume 221, Issue 21, November 2024.This study investigates the temperature‐dependent characteristics of AlN/Al0.5Ga0.5N high electron mobility transistors with highly degenerate n‐type GaN (d‐GaN) ohmic contacts fabricated via pulsed sputtering deposition. The regrown d‐GaN at the source and drain regions works as low‐resistive ohmic contacts within the temperature range of 77–473 K ...
Ryota Maeda +3 more
wiley +1 more source
IGBTs: Concept, Development and New Structures
Kongzhi Yu Xinxi Jishu, 2017 The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj
Recent research progress of SiC superjunction devices
机车电传动, 2023 Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power.
ZHANG Jinping +4 more
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