Results 41 to 50 of about 733 (170)

Bipolar to unipolar conversion in superjunction MOSFETs during resonant switching

Power Electronic Devices and Components
Superjunction MOSFETs have been one of the promising switching components for realizing resonant converters. In spite of the numerous studies about the resonant converters in power electronics, the detailed current flow in the device has been still ...
H. Kang, F. Udrea
doaj   +1 more source

Note Clarifying the Paper, “Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design”

IEEE Journal of the Electron Devices Society, 2020
This note clarifies an important approximation used to simulate the breakdown field in the SiO2 liner of a SiC Charge-Sheet Superjunction - a new power device structure - reported by Akshay and Karmalkar (2020).
K. Akshay, Shreepad Karmalkar
doaj   +1 more source

Research on vertical GaN devices based on gradient Al components

Frontiers in Physics, 2023
A groove-gate power device with a linearly gradient Al composition P-type AlGaN superjunction (abbreviated as LG-SJCAVET) is proposed, which uses polarized P-type AlGaN material instead of the traditional P-type GaN buried layer, avoiding the technical ...
Yonghe Chen, Ye Yang, Jianghui Zhai, Yuanyuan Sun   +3 more
doaj   +1 more source

Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies

Advanced Electronic Materials, Volume 11, Issue 1, January 2025.
The advanced ultra‐wide bandgap semiconductor material β‐Ga2O3 is highly favored for its exceptional material properties. This sudy provides a comprehensive review of its developments in areas such as materials, power devices, and RF devices. The current status of its commercialization process is outlined, along with an analysis of the challenges it is
Sihan Sun, Chenlu Wang, Sami Alghamdi, Hong Zhou, Yue Hao, Jincheng Zhang   +5 more
wiley   +1 more source

Design consideration of 1000V Merged PiN Schottky diode using Superjunction sustaining layer

, 2001
The paper presents a novel rectifier structure based on superjunction technique, the Superjunction Merged PiN Schottky diode. Optimal diode design is obtained exploiting a two-dimensional analytical model, able to correctly estimate electric field, for ...
NAPOLI, ETTORE, A.G.M. STROLLO, E. NAPOLI, STROLLO, ANTONIO GIUSEPPE MARIA   +3 more
core   +1 more source

An Overview and Comparative Analysis of Surface Mount and Pin‐Through‐Hole LV MOSFETs for Power Electronics Applications

IET Power Electronics, Volume 18, Issue 1, January/December 2025.
This work presents an overview of surface‐mounted devices (SMDs) and pin‐through‐hole (PTH) low‐voltage (tens of volts) MOSFETs for power electronics in industrial equipment. Efficiency and cost are analysed using Pareto front in a database of 200 MOSFETs, including PTH (TO220) and SMD (DPAK, D2PAK, TOLL, SuperSO8) packages.
Edemar O. Prado, Luan A. C. Mendonça, Tális Piovesan, Pedro C. Bolsi, Marcio Fontana, Antonio C. de C. Lima, Hamiltom C. Sartori, José R. Pinheiro   +7 more
wiley   +1 more source

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride (Adv. Mater. Interfaces 33/2024)

Advanced Materials Interfaces, Volume 11, Issue 33, November 25, 2024.
Silicon Carbide The wide bandgap semiconductor material Silicon Carbide (SiC) is an attractive proposition to replace Silicon for the development of advanced novel power electronic devices, such as superjunction devices. Trench refill epitaxy (TFE) has been developed, where semiconductor processing techniques have been used to create microstructures in
Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah   +8 more
wiley   +1 more source

Analysis of Intrinsic Switching Losses in Superjunction MOSFETs Under Zero Voltage Switching

Energies, 2020
Switching losses of power transistors usually are the most relevant energy losses in high-frequency power converters. Soft-switching techniques allow a reduction of these losses, but even under soft-switching conditions, these losses can be significant ...
Maria R. Rogina, Alberto Rodriguez, Diego G. Lamar, Jaume Roig, German Gomez, Piet Vanmeerbeek   +5 more
doaj   +1 more source

A Comparison of the Hard-Switching Performance of 650 V Power Transistors With Calorimetric Verification

IEEE Open Journal of Power Electronics, 2023
We compare the switching losses of four equivalent silicon and wide-bandgap 650 V power transistors operated in a hard-switched half-bridge configuration, switching 400 V at 40 A.
Daniel J. Rogers, Jack Bruford, Aleksandar Ristic-Smith, Kawsar Ali, Patrick Palmer, Edward Shelton   +5 more
doaj   +1 more source

High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss

IEEE Journal of the Electron Devices Society, 2022
A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun, Kemeng Yang, Jie Wei, Yanjiang Jia, Siyu Deng, Zhijia Zhao, Bo Zhang, Xiaorong Luo   +7 more
doaj   +1 more source