Results 41 to 50 of about 613 (170)
β-Ga2O3Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm2Power Figure of Merit [PDF]
, 2022 A novel lateral β-Ga2O3 schottky diode with high permittivity dielectric superjuction technique which circumvents the lack of p-type dopants in β-Ga2O3 for high voltage applications is demonstrated. The lateral drift region was depleted from the sides in
Saurav Roy (13871699)
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Research on vertical GaN devices based on gradient Al components
Frontiers in Physics, 2023 A groove-gate power device with a linearly gradient Al composition P-type AlGaN superjunction (abbreviated as LG-SJCAVET) is proposed, which uses polarized P-type AlGaN material instead of the traditional P-type GaN buried layer, avoiding the technical ...
Yonghe Chen +3 more
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Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices
Advanced Electronic Materials, Volume 11, Issue 1, January 2025.The nickel oxide (NiO) is investigated as a p‐type material to pair with n‐type (ultra‐)wide‐bandgap semiconductors to construct multidimensional power devices. A tunable acceptor concentration is revealed in NiO with breakdown field up to 6.3 MV cm−1.
Yunwei Ma +11 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2020 This note clarifies an important approximation used to simulate the breakdown field in the SiO2 liner of a SiC Charge-Sheet Superjunction - a new power device structure - reported by Akshay and Karmalkar (2020).
K. Akshay, Shreepad Karmalkar
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Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
Advanced Electronic Materials, Volume 11, Issue 1, January 2025.The advanced ultra‐wide bandgap semiconductor material β‐Ga2O3 is highly favored for its exceptional material properties. This sudy provides a comprehensive review of its developments in areas such as materials, power devices, and RF devices. The current status of its commercialization process is outlined, along with an analysis of the challenges it is
Sihan Sun +5 more
wiley +1 more source
Analytical models for electric field in superjunction power devices [PDF]
, 2009 Two-dimensional analytical models for the calculation of the electric field distribution in superjunction power semiconductor devices are presented in this paper.
NAPOLI, ETTORE, E. Napoli
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IET Power Electronics, Volume 18, Issue 1, January/December 2025.This work presents an overview of surface‐mounted devices (SMDs) and pin‐through‐hole (PTH) low‐voltage (tens of volts) MOSFETs for power electronics in industrial equipment. Efficiency and cost are analysed using Pareto front in a database of 200 MOSFETs, including PTH (TO220) and SMD (DPAK, D2PAK, TOLL, SuperSO8) packages.
Edemar O. Prado +7 more
wiley +1 more source
Bipolar to unipolar conversion in superjunction MOSFETs during resonant switching
Power Electronic Devices and ComponentsSuperjunction MOSFETs have been one of the promising switching components for realizing resonant converters. In spite of the numerous studies about the resonant converters in power electronics, the detailed current flow in the device has been still ...
H. Kang, F. Udrea
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Analysis of Intrinsic Switching Losses in Superjunction MOSFETs Under Zero Voltage Switching
Energies, 2020 Switching losses of power transistors usually are the most relevant energy losses in high-frequency power converters. Soft-switching techniques allow a reduction of these losses, but even under soft-switching conditions, these losses can be significant ...
Maria R. Rogina +5 more
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High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss
IEEE Journal of the Electron Devices Society, 2022 A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun +7 more
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