Results 51 to 60 of about 178 (144)

New Super-Junction LDMOS Based on Poly-Si Thin-Film Transistors

IEEE Journal of the Electron Devices Society, 2016
A multi-channel super-junction lateral doubled-diffused MOSFET (SJ-LDMOS) that is developed from thin film transistor technology is proposed. To optimize the breakdown voltage (VBD) and to reduce the specific on-resistance (RSP), a new structure called ...
Jhen-Yu Tsai, Hsin-Hui Hu
doaj   +1 more source

Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

IEEE Access, 2021
A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (RonA).
Miao Zhang, Zhiyou Guo, Yong Huang, Yuan Li, Jiancheng Ma, Xiaoyu Xia, Xiuyang Tan, Fan Xia, Huiqing Sun   +8 more
doaj   +1 more source

Current Saturation Behavior in GaN Polarization Superjunction Hybrid Diode

physica status solidi (a), Volume 221, Issue 21, November 2024.
This is the first report on the current saturation behavior observed in the forward characteristics of polarization superjunction (PSJ)‐based hybrid PiN‐Schottky GaN power diodes fabricated on Sapphire. As a result, most of the applied anode voltage is dropped across the regions immediately adjacent to the edge of the doped P‐GaN region closest to the ...
Yangming Du, Ekkanath Madathil Sankara Narayanan, Hiroji Kawai, Shuichi Yagi, Hironobu Narui   +4 more
wiley   +1 more source

Effect of SiO2 Surface Passivation on the Performance of GaN Polarization Superjunction Heterojunction Field Effect Transistors

physica status solidi (a), Volume 221, Issue 4, February 2024.
In this article, the effects of the SiO2 surface passivation layer are firstly reported on the normally‐on 1.2 kV GaN polarization superjunction heterojunction field effect transistors. The static on‐state and off‐state performances of devices are improved after passivation through optimizing the sheet density of 2D electron gas and 2D hole gas.
Yangming Du, Sankara Narayanan Ekkanath Madathil, Hiroji Kawai, Shuichi Yagi, Hironobu Narui   +4 more
wiley   +1 more source

Superjunction LDMOS With Dual Gate for Low On-Resistance and High Transconductance

IEEE Journal of the Electron Devices Society, 2020
In this paper, a novel bulk silicon lateral superjunction double diffused MOSFET (SJ-LDMOS) with dual gate (DG) is proposed and its mechanism is investigated by numerical TCAD simulations.
Zhen Cao, Licheng Jiao
doaj   +1 more source

Normally-Off Trench-Gated AlGaN/GaN Current Aperture Vertical Electron Transistor with Double Superjunction

Technologies
This study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD ...
Jong-Uk Kim, Do-Yeon Park, Byeong-Jun Park, Sung-Ho Hahm   +3 more
doaj   +1 more source

An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS

IEEE Access, 2019
The theoretical analysis of breakdown model for a deep trench superjunction (DT-SJ) SiC VDMOS is presented in this paper. The vertical electric field distribution is derived by the electric field decomposition.
Tao Liu, Shengdong Hu, Jian'an Wang, Gang Guo, Jun Luo, Yuan Wang, Jingwei Guo, Yanmeng Huo   +7 more
doaj   +1 more source

Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement

Доклады Белорусского государственного университета информатики и радиоэлектроники
This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen, Dao Dinh Ha, I. Yu. Lovshenko, V. R. Stempitsky   +3 more
doaj   +1 more source

Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors [PDF]

Zbornik Radova: Elektrotehnički Institut "Nikola Tesla", 2020
The subject of this paper is the mutual comparison of switching energy losses in cascode gallium nitride HEMT and silicon "superjunction" MOSFET transistor, both designed for a maximum operating voltage of 650 V.
Mrvić Jovan, Vukić Vladimir Đ.
doaj  

Simulation Study of a Super-Junction Deep-Trench LDMOS With a Trapezoidal Trench

IEEE Journal of the Electron Devices Society, 2018
A super-junction (SJ) deep-trench (DT) lateral double-diffused metal-oxide-semiconductor transistor improved by tilting the DT sidewalls is proposed. The incline of sidewalls introduces some vertically varying charges into the SJ drift regions on both ...
Junji Cheng, Ping Li, Weizhen Chen, Bo Yi, Xing Bi Chen   +4 more
doaj   +1 more source