Results 51 to 60 of about 733 (170)
physica status solidi (a), Volume 221, Issue 21, November 2024.This study investigates the temperature‐dependent characteristics of AlN/Al0.5Ga0.5N high electron mobility transistors with highly degenerate n‐type GaN (d‐GaN) ohmic contacts fabricated via pulsed sputtering deposition. The regrown d‐GaN at the source and drain regions works as low‐resistive ohmic contacts within the temperature range of 77–473 K ...
Ryota Maeda +3 more
wiley +1 more source
IGBTs: Concept, Development and New Structures
Kongzhi Yu Xinxi Jishu, 2017 The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj
Recent research progress of SiC superjunction devices
机车电传动, 2023 Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power.
ZHANG Jinping +4 more
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New Super-Junction LDMOS Based on Poly-Si Thin-Film Transistors
IEEE Journal of the Electron Devices Society, 2016 A multi-channel super-junction lateral doubled-diffused MOSFET (SJ-LDMOS) that is developed from thin film transistor technology is proposed. To optimize the breakdown voltage (VBD) and to reduce the specific on-resistance (RSP), a new structure called ...
Jhen-Yu Tsai, Hsin-Hui Hu
doaj +1 more source
IEEE Access, 2021 A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (RonA).
Miao Zhang +8 more
doaj +1 more source
Current Saturation Behavior in GaN Polarization Superjunction Hybrid Diode
physica status solidi (a), Volume 221, Issue 21, November 2024.This is the first report on the current saturation behavior observed in the forward characteristics of polarization superjunction (PSJ)‐based hybrid PiN‐Schottky GaN power diodes fabricated on Sapphire. As a result, most of the applied anode voltage is dropped across the regions immediately adjacent to the edge of the doped P‐GaN region closest to the ...
Yangming Du +4 more
wiley +1 more source
physica status solidi (a), Volume 221, Issue 4, February 2024.In this article, the effects of the SiO2 surface passivation layer are firstly reported on the normally‐on 1.2 kV GaN polarization superjunction heterojunction field effect transistors. The static on‐state and off‐state performances of devices are improved after passivation through optimizing the sheet density of 2D electron gas and 2D hole gas.
Yangming Du +4 more
wiley +1 more source
Superjunction LDMOS With Dual Gate for Low On-Resistance and High Transconductance
IEEE Journal of the Electron Devices Society, 2020 In this paper, a novel bulk silicon lateral superjunction double diffused MOSFET (SJ-LDMOS) with dual gate (DG) is proposed and its mechanism is investigated by numerical TCAD simulations.
Zhen Cao, Licheng Jiao
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Analytical modeling of breakdown voltage of superjunction power devices
, 2000 The paper presents an analytic bidimensional model for breakdown voltage of recently proposed superjunction structures. The bidimensional model is able to correctly estimate electric field and breakdown voltage giving an insight in optimal design of ...
NAPOLI, ETTORE +1 more
core +1 more source
BJT application expansion by insertion of superjunction [PDF]
, 2010 International audienceIn this paper, some high voltage Bipolar Junction Transistors are presented and compared in order to suggest a switch for household appliances with fully turn-on, turn-off control. For the first time, a comparative theoretical study,
Quoirin, Jean-Baptiste +5 more
core +2 more sources