Results 51 to 60 of about 613 (170)

New Super-Junction LDMOS Based on Poly-Si Thin-Film Transistors

IEEE Journal of the Electron Devices Society, 2016
A multi-channel super-junction lateral doubled-diffused MOSFET (SJ-LDMOS) that is developed from thin film transistor technology is proposed. To optimize the breakdown voltage (VBD) and to reduce the specific on-resistance (RSP), a new structure called ...
Jhen-Yu Tsai, Hsin-Hui Hu
doaj   +1 more source

A Comparison of the Hard-Switching Performance of 650 V Power Transistors With Calorimetric Verification

IEEE Open Journal of Power Electronics, 2023
We compare the switching losses of four equivalent silicon and wide-bandgap 650 V power transistors operated in a hard-switched half-bridge configuration, switching 400 V at 40 A.
Daniel J. Rogers, Jack Bruford, Aleksandar Ristic-Smith, Kawsar Ali, Patrick Palmer, Edward Shelton   +5 more
doaj   +1 more source

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride (Adv. Mater. Interfaces 33/2024)

Advanced Materials Interfaces, Volume 11, Issue 33, November 25, 2024.
Silicon Carbide The wide bandgap semiconductor material Silicon Carbide (SiC) is an attractive proposition to replace Silicon for the development of advanced novel power electronic devices, such as superjunction devices. Trench refill epitaxy (TFE) has been developed, where semiconductor processing techniques have been used to create microstructures in
Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah   +8 more
wiley   +1 more source

Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

IEEE Access, 2021
A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (RonA).
Miao Zhang, Zhiyou Guo, Yong Huang, Yuan Li, Jiancheng Ma, Xiaoyu Xia, Xiuyang Tan, Fan Xia, Huiqing Sun   +8 more
doaj   +1 more source

Temperature‐Dependent Characteristics of AlN/Al0.5Ga0.5N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts

physica status solidi (a), Volume 221, Issue 21, November 2024.
This study investigates the temperature‐dependent characteristics of AlN/Al0.5Ga0.5N high electron mobility transistors with highly degenerate n‐type GaN (d‐GaN) ohmic contacts fabricated via pulsed sputtering deposition. The regrown d‐GaN at the source and drain regions works as low‐resistive ohmic contacts within the temperature range of 77–473 K ...
Ryota Maeda, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka   +3 more
wiley   +1 more source

A unified model for vertical doped and polarized superjunction GaN devices [PDF]

, 2020
A unified model is proposed to characterize the breakdown voltage (BV) and specific on-resistance (R on, sp) for vertical doped superjunction (d-SJ) and polarized superjunction (p-SJ) GaN power devices.
Junji Cheng, Weijia Zhang, Ng, Wai Tung, Bo Yi, Haimeng Huang, Yi, Bo, Zhang, Weijia, Wai Tung Ng, Huang, Haimeng, Cheng, Junji   +9 more
core   +1 more source

Superjunction LDMOS With Dual Gate for Low On-Resistance and High Transconductance

IEEE Journal of the Electron Devices Society, 2020
In this paper, a novel bulk silicon lateral superjunction double diffused MOSFET (SJ-LDMOS) with dual gate (DG) is proposed and its mechanism is investigated by numerical TCAD simulations.
Zhen Cao, Licheng Jiao
doaj   +1 more source

Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n⁻/n⁺-Buffer Layer

Micromachines, 2022
In this paper, a novel silicon super-junction (SJ) MOSFET embedded with a soft reverse recovery body diode is proposed and studied by numerical simulation.
Zhi Lin, Wei Zeng, Da Wang, Ping Li, Shengdong Hu   +4 more
doaj   +1 more source

Effect of SiO2 Surface Passivation on the Performance of GaN Polarization Superjunction Heterojunction Field Effect Transistors

physica status solidi (a), Volume 221, Issue 4, February 2024.
In this article, the effects of the SiO2 surface passivation layer are firstly reported on the normally‐on 1.2 kV GaN polarization superjunction heterojunction field effect transistors. The static on‐state and off‐state performances of devices are improved after passivation through optimizing the sheet density of 2D electron gas and 2D hole gas.
Yangming Du, Sankara Narayanan Ekkanath Madathil, Hiroji Kawai, Shuichi Yagi, Hironobu Narui   +4 more
wiley   +1 more source

Optimization of Electrical Properties of Lateral Superjunction Devices [PDF]

, 2008
Diese Dissertation befasst sich mit dem Design, der Modellierung, der Simulation und der Charakterisierung neuartiger lateraler Hochvolt-Superjunction-Bauelemente mit Anwendungen in Smart-Power-ICs.
Permthammasin, Komet
core