Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors [PDF]
Zbornik Radova: Elektrotehnički Institut "Nikola Tesla", 2020 The subject of this paper is the mutual comparison of switching energy losses in cascode gallium nitride HEMT and silicon "superjunction" MOSFET transistor, both designed for a maximum operating voltage of 650 V.
Mrvić Jovan, Vukić Vladimir Đ.
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Performance limits of 4H-SiC and 2H-GaN vertical superjunction (SJ) devices [PDF]
, 2018 December 2018School of EngineeringIn our performance limits projections of stripe-cell superjunction devices (STR-SJ), the specific on-resistances are 0.1 mΩ-cm2 and 1 mΩ-cm2 for 4H-SiC and 0.03 mΩ-cm2 and 0.3 mΩ-cm2 for 2H-GaN with blocking voltages of ...
Zhou, Xiang
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SuperJunction insulated gate bipolar transistor [PDF]
, 2009 The main achievement of this work is that we show that by intelligently coupling the ideas and designs from various power semiconductor devices, that do not combine under conventional approaches, we can lower the turn-off losses by a factor of 5 (or more)
Antoniou, M A
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Design and Optimization of Superjunction Vertical DMOS Power Transistors using Sentaurus Device Simulation [PDF]
, 2016 Vertical double-diffused metal oxide semiconductor (VDMOS) power transistor has been studied. The use of superjunction (SJ) in the drift region of VDMOS has been evaluated using three-dimensional device simulation.
Mendoza Macias, Raul
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Simulation Study of a Super-Junction Deep-Trench LDMOS With a Trapezoidal Trench
IEEE Journal of the Electron Devices Society, 2018 A super-junction (SJ) deep-trench (DT) lateral double-diffused metal-oxide-semiconductor transistor improved by tilting the DT sidewalls is proposed. The incline of sidewalls introduces some vertically varying charges into the SJ drift regions on both ...
Junji Cheng +4 more
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SJ-FINFET: A New Low Voltage Lateral Superjunction MOSFET [PDF]
, 2008 This paper proposes a new SOI lateral superjunction (SJ) power transistor structure, SJ-FINFET, to address the requirement for low voltage lateral MOSFETs with low specific on-resistance (Ron,sp). The SJ-FINFET consists of a 3D trench gate and a SJ drift
Y. Onishi +11 more
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kV-class lateral NiOx/GaN superjunction diode via ammonia molecular beam epitaxy (NH3-MBE) [PDF]
APL Electronic DevicesThis study reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based superjunction (SJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The SJ diode capacitance–voltage (C–V) model
Yizheng Liu +4 more
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Design, simulation and analysis of 4H-SiC superjunction structures [PDF]
The superior material properties of Silicon Carbide (SiC) when compared to Silicon (Si), will be instrumental in the next generation of power devices. Notably, the critical electric field which is 10 times greater than Si allows for faster switching and ...
Baker, Guy
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Lateral superjunction power MOSFETs [PDF]
, 2001 grantor: University of TorontoPower semiconductor devices play a crucial role in the efficient control of power used in electronic systems. There is a great need for the reduction of the power losses during switching and on-state conduction of ...
Amberetu, Mathew Atekwana
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Evaluation of SuperJunction MOSFETs in Cascode Configuration for Hard-Switching Operation [PDF]
, 2017 Superjunction MOSFETs in cascode configuration with low-voltage silicon MOSFETs are evaluated in this paper. The proposed structure combines the good switching performance provided by the cascode configuration with the benefits of the silicon technology ...
Rodríguez Méndez, Juan +4 more
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