Results 71 to 80 of about 733 (170)

Evaluation of etching damage of unintentionally doped GaN by C–V characteristics for charge balance evaluation of polarization superjunction GaN FET

Applied Physics Express
The plasma etching of GaN induces an n-type surface conductive layer (SCL) that may disrupt the charge balance of the polarization superjunction structure formed by the polarization charge.
Eito Kokubo, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano   +5 more
doaj   +1 more source

Optimization of Electrical Properties of Lateral Superjunction Devices

, 2008
Diese Dissertation befasst sich mit dem Design, der Modellierung, der Simulation und der Charakterisierung neuartiger lateraler Hochvolt-Superjunction-Bauelemente mit Anwendungen in Smart-Power-ICs.
Permthammasin, Komet
core  

Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage

The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly ...
Qin, Yuan, Srijanto, Bernadeta, Zhang, Yuhao, Ma, Yunwei, Kravchenko, Ivan, Porter, Matthew A., Briggs, Dayrl   +6 more
core   +1 more source

High Pillar Doping Concentration for SiC Superjunction IGBTs

, 2018
This paper is a theoretical study of the optimum doping concentration for the n and p pillars of a superjunction IGBT. As the concentration of the pillar for a silicon-carbide superjunction device increases up to 10 times higher than that of silicon ...
Kang, H, Udrea, F, ,
core  

Analytical calculation of the breakdown voltage for balanced, symmetrical superjunction power devices

, 2010
The superjunction concept allows the design of power semiconductor devices with improved performances compared to conventional sustaining layers. Due to the lack of accurate analytical models to characterize superjunction devices the design phase is ...
Udrea, Florin, Napoli, Ettore, Wang, Han
core   +1 more source

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

Micromachines
In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations.
Rongyao Ma, Ruoyu Wang, Hao Fang, Ping Li, Longjie Zhao, Hao Wu, Zhiyong Huang, Jingyu Tao, Shengdong Hu   +8 more
doaj   +1 more source

Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode

, 2019
This paper presents the analyses on the self-sustained oscillation of superjunction MOSFET intrinsic diode. At first, the characteristics of the self-sustained oscillation for the superjunction MOSFET intrinsic diode are identified by the double-pulse ...
Riccio, Michele, Maresca, Luca, Breglio, Giovanni, XUE, PENG, Irace, Andrea   +4 more
core   +1 more source

Lateral superjunction power MOSFETs

, 2001
grantor: University of TorontoPower semiconductor devices play a crucial role in the efficient control of power used in electronic systems. There is a great need for the reduction of the power losses during switching and on-state conduction of ...
Amberetu, Mathew Atekwana
core   +2 more sources

Simulation Studies of a Trench MOS Device Structure with Small Figures of Merit

MATEC Web of Conferences, 2018
We proposed a vertical high permittivity trench power MOS (HKTMOS) device with alternating N&P drift region and high permittivity (HK) trench sandwiched in between.
Li Junhong
doaj   +1 more source

Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator [PDF]

, 2014
Lateral insulated-gate bipolar transistors (LIGBTs) have long been proposed for use in integrated Power Integrated Circuits (PICs). LIGBTs can be fabricated on either bulk silicon substrate or silicon-on-insulator (SOl).
Kho, Elizabeth Ching Tee
core