Results 91 to 100 of about 178 (144)

The Semi-Superjunction IGBT

IEEE Electron Device Letters, 2010
In this letter, we propose a new device, the Semi-Superjunction (SJ) (Semi-SJ) insulated-gate bipolar transistor (IGBT) (Semi-SJ IGBT). The device offers significant improvement in the on state and switching tradeoff compared with the state-of-the-art FieldStop Trench IGBT (FS IGBT).
Marina Antoniou, Florin Udrea, Friedhelm Bauer, Iulian Nistor   +3 more
openaire   +1 more source

Superjunction by Wafer Direct Bonding

Japanese Journal of Applied Physics, 1995
A pn-junction having a very abrupt impurity profile, called a “superjunction” in this study, was realized by wafer direct bonding (WDB) and low-temperature annealing. To eliminate voids during the low-temperature annealing, a wafer with trenches on the surface was used.
Hitoshi Yamaguchi, Seiji Fujino, Tadashi Hattori, Yoshihiro Hamakawa   +3 more
openaire   +1 more source

Diamond Superjunction (SJ) Process Development: Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES)

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019
The Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES) device is being developed to enable a 2x increase in breakdown voltage of a Super-Lattice Castellated Field Effect Transistor (SLCFET) device. Incorporation of a diamond superjunction (SJ) within the drain region of a SLCFET was previously predicted to improve breakdown ...
Shamima Afroz, Virginia Wheeler, Marko J. Tadjer, James C. Gallagher, Geoffrey Foster, Karl D. Hobart, Brian Novak, Ken A. Nagamatsu, Kevin Frey, Patrick Shea, Rob Howell, Josephine Chang, Andrew D. Koehler, Tatyana Feygelson   +13 more
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JFET Depletion in SuperJunction Devices

2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008
SuperJunction theory predicts that specific on- resistance improves as the widths of the N- and P-type regions in the drift region are reduced. In this paper, it is shown that there is a practical limit to improving on-resistance by shrinking these widths, due to JFET depletion of the conducting regions.
Don Disney, Gary Dolny
openaire   +1 more source

SPICE modelling of the superjunction IGBT

9th International Seminar on Power Semiconductors (ISPS 2008), 2008
This paper presents a SPICE model of the Superjunction Insulated Gate Bipolar Transistor (SJIGBT). SPICE simulation results are in good agreement with the DESSIS simulation results under DC conditions. This model consists of an intrinsic MOSFET and a parallel combination of a wide and a narrow base pnp BJTs. A parasitic JFET is also included to account
M. Antoniou, F. Udrea, F. Bauer
openaire   +1 more source

Study of reliability in superjunction power VDMOSFET

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012
Comparing with CoolMOSTM, a new deep trench structure of superjunction power VDMOS has been developed in HHNEC. In this paper, we have studied main reliability failure mechanisms subjected to HTRB (High Temperature Reverse Bias). Positive improvement actions from both process and package assembly were showed.
Zeng-Yi Fan, Zheng-Yu Chu, Jing Luo, Gang Cao, Scott Liao   +4 more
openaire   +1 more source

A Superjunction LDMOS with Steps Buried Oxide

Journal of Electronic Materials, 2018
A superjunction (SJ) LDMOS with steps buried oxide (SBOX) is proposed in this paper. The SJ LDMOS with SBOX designed is based on the Enhanced Dielectric Field (ENDIF). The drift region is divided into three parts according to the depths of the SBOX, which gradually increases from source to drain in order to optimize the drift region charge ...
Lijuan Wu, Hang Yang, Yinyan Zhang, Yue Song, Na Yuan, Bing Lei, Yiqing Wu   +6 more
openaire   +1 more source

Theory of Semiconductor Superjunction Devices

Japanese Journal of Applied Physics, 1997
A new theory of semiconductor devices, called “semiconductor superjunction (SJ) theory”, is presented. To overcome the trade-off relationship between breakdown voltage and on-resistance of conventional semiconductor devices, SJ devices utilize a number of alternately stacked, p- and n-type, heavily doped, thin semiconductor layers.
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Theory of 3-D Superjunction MOSFET

IEEE Transactions on Electron Devices, 2019
The state-of-the-art superjunction (SJ) MOSFETs are based on the p-n pillar structures, arranged in a 2-D stripe geometry. This arrangement uses the superposition of the electric field components at the p-n junctions to create an enhanced depletion volume for higher breakdown capability.
H. Kang, F. Udrea
openaire   +1 more source

A Review of Superjunction Vertical Diffused MOSFET

IETE Technical Review, 2012
Superjunction has arguably been the most creative and important concept in power device field. Superjunction vertical diffused MOSFET (SJ VDMOS) has been commercialized and the research effort to l...
Jian Chen, Weifeng Sun, Long Zhang, Jing Zhu, Yanzhang Lin   +4 more
openaire   +1 more source