Fabrication of lateral superjunction devices using selective epitaxy [PDF]
, 2018 A lateral superjunction includes a substrate layer, a selective epitaxy layer deposited on the substrate layer, a trench formed into the selective epitaxy layer to expose a portion of the substrate layer, a first layer of semiconductor deposited in the ...
Harris, Harlan Rusty +1 more
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Multi-Split SOI Super-Junction VDMOS: A TCAD Simulation Study of the Single-Event Effect
IEEE AccessThis work presents a radiation-hardened Superjunction Vertical Double-Diffused MOSFET (SJ-VDMOS) architecture designed to improve robustness against destructive single-event effects (SEEs), specifically Single-Event Gate Rupture (SEGR) and Single-Event ...
Sanjeev Manoj Ranjan +4 more
doaj +1 more source
Effect of Pillar Ripple on Static and Dynamic Trade-Offs in Superjunction MOSFETs [PDF]
, 2020 Multi-epitaxially grown superjunctions feature a fluctuation of the doping concentration (ripple) in the pillars and the ripple is highly dependent on the supplied thermal energy during the fabrication. This study thoroughly investigates the relationship
Kang, H, Udrea, F, Donato, N, ,
core
200V superjunction lateral IGBT fabricated on partial SOI [PDF]
, 2013 A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process.
Hoelke, A +8 more
core
A new vertical power MOSFET with extremely reduced on resistance and high switching speed with multilayer structure [PDF]
, 2001 A vertical power MOSFET’s whose n-drift region is stacked by alternate pn structure named as MULTILAYER POWER MOSFET has been proposed for high voltage application with extremely low on-resistance.
Hakim, M.M.A., Alam, A.H.M. Zahirul
core
Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation. [PDF]
Micromachines (Basel), 2022 Zhao D +11 more
europepmc +1 more source
Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. [PDF]
Materials (Basel), 2023 Maimon O, Li Q.
europepmc +1 more source
Modular pulse synthesizer for transcranial magnetic stimulation with fully adjustable pulse shape and sequence. [PDF]
J Neural Eng, 2022 Li Z, Zhang J, Peterchev AV, Goetz SM.
europepmc +1 more source
Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices. [PDF]
Micromachines (Basel), 2023 Rafin SMSH +5 more
europepmc +1 more source
New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics. [PDF]
Materials (Basel), 2020 Zhang M, Li B, Wei J.
europepmc +1 more source