Analysis of the Operation Mechanism of Superjunction in RC-IGBT and a Novel Snapback-Free Partial Schottky Collector Superjunction RC-IGBT [PDF]
Micromachines, 2023 This paper explores the operation mechanism of the superjunction structure in RC-IGBTs based on carrier distribution and analyzes the advantages and challenges associated with its application in RC-IGBTs for the first time.
Song Yuan +5 more
doaj +2 more sources
A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer [PDF]
Micromachines, 2023 A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large ...
Zhigang Wang, Chong Yang, Xiaobing Huang
doaj +2 more sources
A TCAD Study on High-Voltage Superjunction LDMOS with Variable-K Dielectric Trench [PDF]
Micromachines, 2022 In this paper, a novel high voltage superjunction lateral double diffused MOSFETs (SJ-LDMOS) using a variable high permittivity (VHK) dielectric trench is presented.
Zhen Cao +5 more
doaj +2 more sources
A FIN-LDMOS with Bulk Electron Accumulation Effect [PDF]
Micromachines, 2023 A thin Silicon-On-Insulator (SOI) LDMOS with ultralow Specific On-Resistance (Ron,sp) is proposed, and the physical mechanism is investigated by Sentaurus.
Weizhong Chen +4 more
doaj +2 more sources
Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective [PDF]
Micromachines, 2023 The single-event effect reliability issue is one of the most critical concerns in the context of space applications for SiC VDMOS. In this paper, the SEE characteristics and mechanisms of the proposed deep trench gate superjunction (DTSJ), conventional ...
Tao Liu +7 more
doaj +2 more sources
A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations [PDF]
MicromachinesSuperjunction (SJ) technology offers a promising solution to the challenges faced by silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) operating at high voltages (>3 kV).
Marco Boccarossa +8 more
doaj +2 more sources
Machine Learning-Based Figure of Merit Model of SIPOS Modulated Drift Region for U-MOSFET [PDF]
MicromachinesThis paper presents a machine learning-based figure of merit model for superjunction (SJ) U-MOSFET (SSJ-UMOS) with a modulated drift region utilizing semi-insulating poly-crystalline silicon (SIPOS) pillars.
Zhen Cao +4 more
doaj +2 more sources
A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars
Crystals, 2022 In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance.
Rongyu Gao +6 more
doaj +1 more source
IEEE Access, 2021 A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (RonA).
Miao Zhang +8 more
doaj +1 more source
IET Power Electronics, Volume 15, Issue 7, Page 594-604, 20 May 2022., 2022 Abstract A simple and accurate analytical model for the estimation of switching losses on power MOSFETs is proposed. It consists of simplifying the non‐linear behaviour of Miller capacitance as a function of voltage. Experimental results are used to validate the model in the 5–500 kHz range. The proposed analytical model is compared to other frequently
Edemar O. Prado +3 more
wiley +1 more source