Results 21 to 30 of about 45,705 (145)
IEEE Access, 2021 This paper presents the concept and results of a novel resonant DC-DC converter which achieves high voltage gain at a low number of utilized switches, low voltage stress on transistors, ZVS and ZCS operation, high efficiency and variable voltage gain ...
Szymon Folmer, Robert Stala
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Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design
IEEE Journal of the Electron Devices Society, 2020 We discuss details of the Charge Sheet SuperJunction (CSSJ) in 4H-Silicon Carbide (SiC). This device was earlier proposed in Si material. A CSSJ is obtained by replacing the p-pillar of a SJ by a bilayer insulator, e.g., Al2O3/SiO2; the inter-layer ...
K. Akshay, Shreepad Karmalkar
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On the Specific on-State Resistance of Superjunction MOSFETs With a Compensated Pillar [PDF]
, 2018 In this letter, we report an analytical model for the on-state characteristics of a superjunction (SJ) metal–oxide–semiconductor field effect transistor, featuring a compensated pillar between the n-pillar and the p-pillar.
Kang, H, Udrea, F, ,
core +4 more sources
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Advanced Electronic Materials, Volume 4, Issue 1, January 2018., 2018 Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices and applications. This article surveys and presents an enumerated list of the materials, physics, device and associated application research ...
J. Y. Tsao +32 more
wiley +1 more source
, 2014 The power semiconductor devices control the energy flow in virtually every electric and electronic system. Most common applications are: automotive, traction, consumer electronics, air conditioning, electric engines.
NAPOLI, ETTORE, Ettore Napoli
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kV-class lateral NiOx/GaN superjunction diode via ammonia molecular beam epitaxy (NH3-MBE) [PDF]
APL Electronic DevicesThis study reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based superjunction (SJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The SJ diode capacitance–voltage (C–V) model
Yizheng Liu +4 more
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Modeling the switching behaviour of SuperJunction MOSFETs in cascode configuration with a low voltage silicon MOSFET [PDF]
, 2016 This work presents a piecewise model to predict electrical waveforms of SuperJunction Cascode Configurations (SJ-CCs) during hard-switching operation.
Rodríguez Méndez, Juan +9 more
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Simulation Studies of a Trench MOS Device Structure with Small Figures of Merit
MATEC Web of Conferences, 2018 We proposed a vertical high permittivity trench power MOS (HKTMOS) device with alternating N&P drift region and high permittivity (HK) trench sandwiched in between.
Li Junhong
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IEEE Access, 2019 The theoretical analysis of breakdown model for a deep trench superjunction (DT-SJ) SiC VDMOS is presented in this paper. The vertical electric field distribution is derived by the electric field decomposition.
Tao Liu +7 more
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A superjunction insulated Gate Bipolar Transistor with bilateral HK insulators: A solution to charge imbalance [PDF]
, 2014 A superjunction (SJ) IGBT(Insulated Gate Bipolar Transistor) with bilateral HK (high permittivity) insulators(BHK-SJ-IGBT) is proposed. In the OFF-state, the n/p pillars are not only depleted by each other, but also by the bilateral HK capacitors ...
Wei, Hang +5 more
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