AIP AdvancesDesigning high voltage superjunction (SJ) power devices with wide bandgap and extreme bandgap semiconductors, when compared to silicon, can enhance the trade-off between RON,sp and BV significantly, due to their >10× higher avalanche breakdown electric ...
Mohamed Torky, T. Paul Chow
doaj +1 more source
IEEE Transactions on Electron DevicesWith the increasing use of power semiconductor devices in radiation-rich environments, it is essential to understand the effects of different radiation types on device performance.
Sangyun Song +3 more
semanticscholar +1 more source
SuperJunction IGBTS: An evolutionary step of silicon power devices with high impact potential [PDF]
, 2012 15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, major breakthrough in the field of silicon power devices.
Antoniou, M +5 more
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Optimal ON Resistance vs. Breakdown Voltage Trade-off in Superjunction Power Devices: a Novel Analytical Model [PDF]
, 2001 A two-dimensional (2-D) analytical model for the calculation of breakdown voltage of recently proposed power superjunction (SJ) devices is presented. The model is able to correctly estimate electric field and breakdown voltage giving a deep insight in ...
NAPOLI, ETTORE +1 more
core +1 more source
The lateral superjunction PSOI LIGBT and LDMOSFET [PDF]
, 2012 This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process.
Pilkington, SJ +6 more
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200 V Superjunction N-Type Lateral Insulated-Gate Bipolar Transistor With Improved Latch-Up Characteristics [PDF]
, 2013 This paper evaluates the technique used to improve the latching characteristics of the 200 V n-type superjunction (SJ) lateral insulated-gate bipolar transistor (LIGBT) on a partial silicon-on-insulator.
Pilkington, SJ +8 more
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Design of Dual-Gate Superjunction IGBT towards Fully Conductivity-Modulated Bipolar Conduction and Near-Unipolar Turn-Off [PDF]
, 2020 In this work, we propose to utilize a superjunction structure as a controlling port for the strength of conductivity modulation inside the IGBT, so that a low VON is obtained by a strong conductivity modulation during on-state and a near-unipolar turn ...
Kevin J. Chen +5 more
core +1 more source
Design and Optimization of Superjunction Vertical DMOS Power Transistors using Sentaurus Device Simulation [PDF]
, 2016 Vertical double-diffused metal oxide semiconductor (VDMOS) power transistor has been studied. The use of superjunction (SJ) in the drift region of VDMOS has been evaluated using three-dimensional device simulation.
Mendoza Macias, Raul
core +1 more source
Multi-Split SOI Super-Junction VDMOS: A TCAD Simulation Study of the Single-Event Effect
IEEE AccessThis work presents a radiation-hardened Superjunction Vertical Double-Diffused MOSFET (SJ-VDMOS) architecture designed to improve robustness against destructive single-event effects (SEEs), specifically Single-Event Gate Rupture (SEGR) and Single-Event ...
Sanjeev Manoj Ranjan +4 more
doaj +1 more source
200V superjunction lateral IGBT fabricated on partial SOI [PDF]
, 2013 A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process.
Hoelke, A +8 more
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