Results 51 to 60 of about 45,705 (145)

Cost-Effective Design and Optimization of a 3300-V Semi-Superjunction 4H-SiC MOSFET Device

Key Engineering Materials
This study investigates a cost-effective semi-Superjunction (SSJ) solution for 3.3 kV silicon carbide (SiC) MOSFETs, comparing planar and trench configurations.
K. Melnyk, M. Boccarossa, A. Renz, Q. Cao, P. Gammon, V. Shah, L. Maresca, A. Irace, Marina Antoniou   +8 more
semanticscholar   +1 more source

Performance and Reliability Codesign for Superjunction Drain Extended MOS Devices [PDF]

, 2017
Conventionally, integrated drain-extended MOS (DeMOS) like high-voltage devices are designed while keeping only performance targets for a given application in mind.
Shrivastava, Mayank, Bhat, M S, Somayaji, Jhnanesh, Kumar, Sampath B   +3 more
core   +1 more source

C_OSS Losses in Resonant Converters

Energies
High efficiency and high power density are key targets in modern power conversion. Operating power converters at high switching frequencies enables the use of smaller passive components, which, in turn, facilitate achieving high power density.
Giuseppe Samperi, Antonio Laudani, Nunzio Salerno, Alfio Scuto, Marco Ventimiglia, Santi Agatino Rizzo   +5 more
doaj   +1 more source

Design and Process Analysis of a Split-Gate Trench Power MOSFET With Bottom-Trench High-k Pillar Superjunction for Enhanced Performance

IEEE Access
In this paper, we propose a simulation-based novel Split-Gate Trench MOSFET structure with an optimized fabrication process to enhance power efficiency, switching speed, and thermal stability for high-performance semiconductor applications.
Yunteng Jiang, Zhentao Xiao, Zonghao Zhang, Junchen Zhang, Chenxing Wang, Wenjun Li, Haimeng Huang, Aynul Islam, Hongqiang Yang   +8 more
doaj   +1 more source

Simulation of the Effects of the Pillar Configurations on 1.2 kV 4H-SiC Superjunction DMOSFET

Microelectronics Journal
4H-SiC has been studied and applied in power semiconductor devices due to its wider band gap and higher thermal conductivity than those of Si and hence has great potential for power devices operating at high powers and high temperatures. The introduction
Keng-Ming Liu, Shih-Ching Ou
semanticscholar   +1 more source

Performance transition from full- to semi-superjunction geometries in 4H-SiC

Journal of Applied Physics
We present a numerical exploration of the trade-off between specific on-resistance and breakdown voltage in silicon carbide superjunction (SJ) devices along the [0001] crystal orientation. Our study spans vertical-symmetric full-SJ geometry to the hybrid
Daisuke Iizasa, Hiroaki Shiraga, Seigo Mori, Yuki Nakano   +3 more
semanticscholar   +1 more source

Economic Feasibility Analysis of Vertical High-Voltage 4H-SiC Superjunction MOSFETs Compared to Conventional Counterparts

Key Engineering Materials
Vertical high-voltage 4H-SiC superjunction (SJ) MOSFETs have emerged as a superior alternative compared to conventional SiC MOSFET or Si IGBT, as SJ MOSFETs present a better trade-off between specific on-resistance (RON,sp) and breakdown voltage (BV ...
M. Torky, Woongje Sung
semanticscholar   +1 more source

Superjunction IGBT vs. FS IGBT for 200°C operation [PDF]

, 2015
Adverse effects on the temperature-dependent properties of Insulated Gate Bipolar Transistors (IGBTs) are often observed when the junction temperature exceeds 175°C. It is believed that attempts in enabling the operation of IGBTs at 200°C will inevitably
Tang, Y, Camuso, G, Udrea, F, Ranjan, N, Charles, A, Hsieh, APS, Vytla, RK, Ng, C, ,   +8 more
core  

A superjunction snapback-free reverse-conducting insulated gate bipolar transistor with anti-parallel p-i-n diode [PDF]

, 2014
A superjunction reverse-conducting IGBT (SJ-RC-IGBT) with anti-parallel p-i-n diode is proposed in this paper. By introducing an additional trench oxide between the P anode and N anode, the proposed structure performes just like the conventional IGBT in ...
Wei, Hang, Frank X.C. Jiang, Jiang, Frank X.C., Yu, Ji, Hang Wei, Xinnan Lin, Lin, Xinnan, Ji Yu   +7 more
core   +1 more source

Methods to Suppress Earlier Leakage in 200V Superjunction LIGBT on Partial SOI [PDF]

, 2013
For most devices fabricated on SOI wafer, there is a consideration of backside coupling effect. This phenomenon becomes catastrophic if the device fabricated on the SOI wafer is an IGBT which consists of n-p-n-p structure and employs both the partial SOI
Ng, Liang Yew, Marina, Antoniou, Steven John, Pilkington, Alexander, Hölke, Wan Azlan, Bin Wan Zainal Abidin, Deb Kumar, Pal, Florin, Udrea, Kho Ching Tee, Elizabeth   +7 more
core   +1 more source