Results 71 to 80 of about 45,705 (145)

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices. [PDF]

Micromachines (Basel), 2023
Rafin SMSH, Ahmed R, Haque MA, Hossain MK, Haque MA, Mohammed OA.   +5 more
europepmc   +1 more source

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. [PDF]

Materials (Basel), 2023
Maimon O, Li Q.
europepmc   +1 more source

3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance

IEEE Transactions on Electron Devices
This study describes the design and optimization of a 3.3 kV silicon carbide (SiC) semi-superjunction (semi-SJ) Schottky barrier diode (SBD). The proposed structure features a $7~\mu $ m deep trench filled with silicon dioxide (SiO2).
K. Melnyk, A. Renz, Q. Cao, P. Gammon, N. Lophitis, L. Maresca, A. Irace, Iulian Nistor, Munaf Rahimo, M. Antoniou   +9 more
semanticscholar   +1 more source

New Power MOSFET with Beyond-1D-Limit R_SP-BV Trade-Off and Superior Reverse Recovery Characteristics. [PDF]

Materials (Basel), 2020
Zhang M, Li B, Wei J.
europepmc   +1 more source

150-200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers. [PDF]

Micromachines (Basel), 2020
Chien FT, Wang ZZ, Lin CL, Kang TK, Chen CW, Chiu HC.   +5 more
europepmc   +1 more source

Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs. [PDF]

Micromachines (Basel)
Cui W, Liao P, Wang Y, Guo J, Yang Y, Zhang DW, Xu H.   +6 more
europepmc   +1 more source

Analysis of Superjunction MOSFET (CoolMOS^TM) Concept Limitations-Part II: Simulations. [PDF]

Materials (Basel)
Lisik Z, Podgórski J.
europepmc   +1 more source

Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm². [PDF]

Micromachines (Basel)
Song CW, Lee T, Kim D, Kyoung S, Woo S.
europepmc   +1 more source

Design and optimization of 3.3 kV silicon carbide semi-superjunction schottky power devices [PDF]

Silicon carbide (SiC) based power devices are highly competitive and widely used, especially in the electric vehicle (EV) market. Beyond the “conventional” 650-1700 V blocking voltage space for EV applications, high-voltage (>3 kV), high-current (>100 A)
Gammon, Peter M., Cao, Qinze, Maresca, Luca, Borghese, Alessandro, Rahimo, Munaf, Antoniou, Marina, Shah, Vishal, Nistor, Iulian, Melnyk, Kyrylo, Renz, Arne Benjamin, Lophitis, Neophytos, Irace, Andrea   +11 more
core  

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source