Results 91 to 100 of about 45,705 (145)

The SuperJunction MOS-controlled thyristor (SJ-MCT) with low power loss for high-power switching applications

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012
In this paper, a novel MOS controlled-thyristor (MCT) that employs the SuperJunction concept (SJ-MCT) has been investigated, for the first time. The SJ-MCT offers significant improvement in the on-state voltage drop (V on ) and turn-off switching loss (E off ) compared with the state-of-the-art conventional MCT.
Wanjun Chen, Jinhan Zhang, Bo Zhang, Huaping Jiang, Zhaoji Li   +4 more
openaire   +1 more source

The Effect of Charge Imbalance on Superjunction Power Devices: An Exact Analytical Solution [PDF]

IEEE Electron Device Letters, 2008
Charge imbalance in the drift region of superjunction (SJ) devices can significantly impair its breakdown voltage (BV). An analytical solution for the electric field and the BV of symmetrical SJ devices, which accounts for the effect of the charge ...
Ettore Napoli, Han Wang, F Udrea
exaly   +2 more sources

200-V Lateral Superjunction LIGBT on Partial SOI [PDF]

IEEE Electron Device Letters, 2012
This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process.
Wan Azlan Wan Zainal Abidin, Liang Yew Ng, Marina Antoniou   +2 more
exaly   +1 more source

5-kV SiC Deep-Implanted Superjunction MOSFETs

IEEE Electron Device Letters
This work presents the development and characterization of 5kV deep-implanted SiC superjunction (SJ) MOSFETs. In these switches, the $36\mu $ m deep n-type and p-type SJ pillars were formed using three rounds of epitaxial overgrowth and ultra-high ...
Reza Ghandi, Collin Hitchcock, T. Saha, E. Delgado, Stacey Kennerley   +4 more
semanticscholar   +1 more source

4H-SiC superjunction MOSFET with integrated high-K gate dielectric and split gate

Journal of Semiconductors
A 4H-SiC superjunction (SJ) MOSFET (SJMOS) with integrated high-K gate dielectric and split gate (HKSG-SJMOS) is proposed in this paper. The key features of HKSG-SJMOS involve the utilization of high-K (HK) dielectric as the gate dielectric, which ...
Jiafei Yao, Zhengfei Yang, Yuxuan Dai, Ziwei Hu, Man Li, Kemeng Yang, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo   +9 more
semanticscholar   +1 more source

Next-Generation Superjunction Power Device with Trench Sidewall Doping

International Symposium on Power Semiconductor Devices and IC's
This study proposes a novel Trench Sidewall Doping (TSD) Superjunction (SJ) architecture utilizing Plasma Doping (PLAD) technology to address scalability limitations in traditional SJ fabrication.
C. L. Liao, L. Renna, V. Ngwan, C. Galati, N. Spinella, G. Longo, F. Patane, G. Di-Stefano, J. X. Zheng, N. Xiang   +9 more
semanticscholar   +1 more source

Comparative Performance Evaluation and Analysis of High Voltage Superjunction, Charge-Balanced, and Conventional 4H-SiC DMOSFETs at Cryogenic and High Temperatures

International Symposium on Power Semiconductor Devices and IC's
We have experimentally investigated the static performance of 3.3kV Superjunction (SJ), a 3.3kV Charge-Balanced (CB), and 1.2kV commercial conventional (Conv) 4H-SiC DMOSFETs between cryogenic (77K) and high (423K) temperatures. Our results show that the
Z. He, R. Ghandi, C. Hitchcock, S. Kennerly, T. P. Chow   +4 more
semanticscholar   +1 more source

A novel lateral superjunction Ga2O3 MOSFET with a self-biased accumulation layer for ultra-low specific on-resistance and improved FOM

Semiconductor Science and Technology
In this article, a high-performance enhancement-mode (E-mode) lateral superjunction (SJ) β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating a self-biased p-type nickel oxide (NiO) layer was proposed and numerical ...
M. Kong, Mingliang Yang, Hongfei Deng, Zeyu Cheng, Zhaoyu Ai, Bo Yi, Hongqiang Yang, Bingke Zhang   +7 more
semanticscholar   +1 more source

Avalanche and Short Circuit Withstand Capabilities in 3.3 kV-Class SiC Superjunction MOSFET

International Symposium on Power Semiconductor Devices and IC's
3.3 kV-class silicon carbide superjunction (SJ) MOSFETs with three different column lengths were fabricated, and the influence of column length on their avalanche and short-circuit withstand capabilities were investigated.
S. Matsunaga, Takeshi Tawara, Syunki Narita, Masakazu Baba, K. Takenaka, Tadao Morimoto, Shinsuke Harada   +6 more
semanticscholar   +1 more source

Experimental Demonstration and Analysis of 4.5kV Bidirectional Superjunction Power DMOSFETs in 4H-SiC

International Symposium on Power Semiconductor Devices and IC's
We have experimentally demonstrated two configurations for a 4.5kV 4H-SiC bidirectional (BD) Superjunction (SJ) power DMOSFET for the first time, using two unidirectional (UD) General Electric (GE) 4.5kV 4H-SiC SJ DMOSFETs.
Z. He, R. Ghandi, C. Hitchcock, S. Kennerly, T. P. Chow   +4 more
semanticscholar   +1 more source