Results 111 to 120 of about 45,705 (145)

Influence of the Charge-Imbalance Condition on the Short-Circuit Characteristics of the 4H-SiC Superjunction MOSFET

2025 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSS)
This paper conducts a study on the dynamic shortcircuit characteristics of Silicon Carbide (SiC) Superjunction Metal-Oxide-Semiconductor Field Effect Transistors (SJ MOSFETs) under charge imbalance conditions.
Huan Ning, Da Wang, Zhi Lin
semanticscholar   +1 more source

Empirical Formula to Calculate the Design and Performance Parameters of 4H-SiC Superjunction Structure in the Presence of Charge Imbalance

IEEE Workshop on Wide Bandgap Power Devices and Applications
This paper offers a detailed analysis of the optimum design and performance parameters in the presence of charge imbalance for superjunction devices in 4H-SiC.
Monoara Begum, Monzurul Alam
semanticscholar   +1 more source

Low EMI Noise Superjunction MOSFET With an N-dot Region in the P-Pillar

International Symposium on Power Semiconductor Devices and IC's
This paper presents a low electromagnetic interference (EMI) noise superjunction metal-oxidesemiconductor field-effect transistor (SJ-MOSFET) with an Ndot region in the $\mathbf{P}$-pillar region.
Ping Li, Rongyao Ma, Xin Zhang, Daili Wang, Kaifeng Tang, W. Zeng, Wentong Zhang, Teng Liu   +7 more
semanticscholar   +1 more source

Optimization of Three-dimensional High-k Superjunction under Non-Punch-Through Mode: Theoretical Modeling and Comparison

International Conference on ASIC
This paper proposes a Non-Punch-Through (NPT) optimization methodology for three-dimensional (3D) high-permittivity superjunction (Hk-SJ) MOSFETs under three constraints.
Zhentao Xiao, Chenxing Wang, Zonghao Zhang, Haimeng Huang   +3 more
semanticscholar   +1 more source

A novel SiC superjunction trench MOSFET with integrated heterojunction diode for reduced power loss and saturation current

Semiconductor Science and Technology
A novel silicon carbide (SiC) superjunction trench metal-oxide-semiconductor field-effect transistor (SJ TMOS) with integrated heterojunction diode (HJD-SJ TMOS) is proposed and characterized to effectively reduce power loss and saturation current (Idsat)
Jin-ping Zhang, Wei Hou, Wei Chen, Kun Zhang, Yang Liu, Xudong Ma, Bo Zhang   +6 more
semanticscholar   +1 more source

Optimisation of the Fabrication of Sidewall-Implanted Trenches in a 3.3 kV SiC Semi-Superjunction Schottky Barrier Diode

International Symposium on Power Semiconductor Devices and IC's
In this paper we demonstrate a fully optimized process flow for silicon carbide semi-Superjunction (semi-SJ) Schottky barrier diodes, achieving high performance with readily available foundry technology.
A. Renz, K. Melnyk, N. Iosifidis, R. Jefferies, M. Zignale, P. Fiorenza, L. Maresca, A. Irace, F. Roccaforte, N. Lophitis, P. Gammon, Marina Antoniou   +11 more
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Comparative Performance Evaluation for GaN Bidirectional, 1.2–10kV, Conventional and Superjunction Current Aperture Vertical Electron Transistors (CAVETs) and UMOSFETs

ECS Meeting Abstracts
The performance potentials and limits of bidirectional (BD) GaN current aperture vertical electron transistor (CAVET) and BD GaN UMOSFETs are evaluated for breakdown voltage (BV) ratings ranging from 1.2–10kV.
Giorgian Borca-Tasciuc, T. P. Chow
semanticscholar   +1 more source

A Novel Low Loss Superjunction MOSFET with Hybrid Conduction Modes

IEEE Electron Devices Technology and Manufacturing Conference
A novel superjunction MOSFET with hybrid conduction modes (HCM SJ-MOSFET) is proposed. The proposed HCM SJ-MOSFET can operate in unipolar conduction mode in the N- pillar and bipolar conduction mode in P- pillar, which dramatically reduces the specific ...
Yun Xia, Gang Chen, Yuxi Wan, Wanjun Chen, Ruize Sun, X. Wang, Yan Wang, Xiaoping Wang   +7 more
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A Superjunction MOSFET with Self-Adjustable Electron Path for Low Reverse Recovery Charge

International Symposium on Power Semiconductor Devices and IC's
A novel superjunction MOSFET (SJ-MOSFET) with self-adjustable electron path (SEP) is proposed. The SEP is formed by a floating ohmic contact (FOC) and two parasitic diodes.
Tongyang Wang, Zehong Li, Ziming Xia, Yige Zheng, Jing Feng   +4 more
semanticscholar   +1 more source

Intelligent Design of Superjunction Devices Based on Physics-Informed Neural Network

International Symposium on Power Semiconductor Devices and IC's
A physics-informed neural network for the intelligent design of superjunction power devices (SJ-PiNN) is proposed for the first time and experimentally validated.
Jing Chen, Huiyuan Li, Haiwei Tan, Zhekai Hu, Jiafei Yao, Ziwei Hu, Ping Li, Rongyao Ma, Wentong Zhang, Bo Zhang, Yufeng Guo   +10 more
semanticscholar   +1 more source