Results 101 to 110 of about 45,705 (145)

Fabrication and Optimization of 1550 V Semi-Superjunction MOSFET with Ultra-Low Specific On-Resistance and Enhanced Switching Performance

International Symposium on Power Semiconductor Devices and IC's
In this work, we have demonstrated a semi-superjunction (semi-SJ) MOSFET that exhibits a breakdown voltage (BV) exceeding 1500 V, while achieving a low specific on-resistance (RON,SP) and enhanced switching characteristics.
G. Yao, M. Qiao, Bo Zhang
semanticscholar   +1 more source

Outperformance of Asymmetric 4H-SiC Superjunction Geometry Beyond the Optimal Limit of Symmetric Design

International Symposium on Power Semiconductor Devices and IC's
The integration of juxtaposed $\mathbf{n}$ - and p-type semiconductor pillars into the conduction layer of power devices, termed superjunction (SJ) geometry, enables low specific onresistance ($R_{\text{on}, \text{sp}}$) while maintaining the desired ...
Daisuke Iizasa, Hiroaki Shiraga, Seigo Mori, Yuki Nakano   +3 more
semanticscholar   +1 more source

Revisiting the Vertical Superjunction in SiGe HBT Performance Optimization

IEEE Transactions on Electron Devices
We numerically investigate a new asymmetric superjunction (SJ) collector profile implemented in the context of high-speed 90-nm silicon-germanium heterojunction bipolar transistors (SiGe HBTs).
Justin P. Heimerl, Harrison P. Lee, C. Jungemann, John D. Cressler   +3 more
semanticscholar   +1 more source

Performance Limit of GaN Superjunction Devices

SoutheastCon
This paper presents a comprehensive analysis and design guidelines for superjunction (SJ) devices in gallium nitride (GaN). The performance limit of GaN SJ structure in the presence of charge imbalance has also been demonstrated.
Oluwaseun Samuel Shiyanbola, Monzurul Alam   +1 more
semanticscholar   +1 more source

Optimization of Specific On-Resistance for Superjunction With Insulating Pillar Including Temperature Dependence

IEEE Transactions on Electron Devices
Unified temperature-dependent models are developed to optimize ${R} {_{\text {sp}}}$ for the insulating pillar superjunction (IP-SJ) MOSFETs. The insulating pillar (i-pillar) could be intrinsic silicon in the compensated pillar SJ (CP-SJ) structure ...
Haimeng Huang, Xiao Wang, Haoyue Zhang, Zhentao Xiao, Juncheng Xiong, Hongqiang Yang   +5 more
semanticscholar   +1 more source

Effect of Charge Imbalance on the Balanced Optimized Superjunction Structures in GaN

2025 IEEE 34st Microelectronics Design & Test Symposium (MDTS)
The paper presents a simple analytical model to find the optimum performance and design parameters of a superjunction (SJ) device in gallium nitride (GaN).
Monzurul Alam
semanticscholar   +1 more source

Simulation Research on a Ga2O3-Based Superjunction Field Effect Transistor

ECS Journal of Solid State Science and Technology
The new superjunction (SJ) structure based on the charge compensation principle has greatly improved the limitation of low breakdown voltage (BV) and high specific on-resistance (Ron,sp) of conventional power devices.
Yixin Han, Zixiang Luo, Jialin Wang, Chunfu Zhang, Q. Feng, Jincheng Zhang, Yue Hao   +6 more
semanticscholar   +1 more source

Energy-Efficient Superjunction IGBT with Improved Breakdown Voltage Using Floating Island Structure

2025 International Conference on Electronics, Computing, Communication and Control Technology (ICECCC)
This paper presents a novel IGBT design with a floating island at the bottom of superjunction (SJ) IGBT. The proposed device structure significantly improves 8.33% in breakdown voltage and 6.67% in electric field, respectively.
A. Mallick, Alok Naugarhiya, Ashutosh Mishra   +2 more
semanticscholar   +1 more source

Theory of asymmetric geometry control for enhanced on-resistance in 4H-SiC semi-superjunction devices

Semiconductor Science and Technology
The trade-off between specific on-resistance and breakdown voltage in asymmetric 4H-SiC semi-superjunction (SJ) designs is theoretically explored. We demonstrate that the existing ideal performance limit of symmetric semi-SJ geometry in 4H-SiC can be ...
Daisuke Iizasa, Hiroaki Shiraga, Suguru Okuyama, Seigo Mori, Yuki Nakano   +4 more
semanticscholar   +1 more source

Extreme Optimization of 1200V SuperJunction IGBT, Competing with SiC MOSFET

International Symposium on Power Semiconductor Devices and IC's
1200V SuperJunction IGBT (SJ-IGBT) are optimized independently for switching-off and -on, by using comprehensive TCAD simulations. We propose, for the first time, that the turn-off and turn-on losses can be significantly reduced by adopting wider pillar ...
Masahiro Tanaka, N. Abe, Akio Nakagawa
semanticscholar   +1 more source