Results 81 to 90 of about 45,705 (145)
Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) heterogeneous and heterojunction power devices. [PDF]
Fundam ResLi B +9 more
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A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability. [PDF]
Sci RepGuo J +5 more
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Radiation Displacement Defect in SuperJunction Insulated Gate Bipolar Transistor (SJ-IGBT)
2021 IEEE Region 10 Symposium (TENSYMP), 2021In this work, we report the impact of displacement defect due to radiation effect in the superjunction insulated gate bipolar transistor (SJ-IGBT). Simulations on its DC characteristics, breakdown voltage and power dissipation are carried out via technology computer-aided design (TCAD) simulation.
Gyeongyeop Lee +2 more
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SJ-FINFET: A New Low Voltage Lateral Superjunction MOSFET [PDF]
2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008 This paper proposes a new SOI lateral superjunction (SJ) power transistor structure, SJ-FINFET, to address the requirement for low voltage lateral MOSFETs with low specific on-resistance (Ron,sp). The SJ-FINFET consists of a 3D trench gate and a SJ drift region (the fin) to reduce both the channel resistance and the drift region resistance.
Y. Onishi +5 more
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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019
The Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES) device is being developed to enable a 2x increase in breakdown voltage of a Super-Lattice Castellated Field Effect Transistor (SLCFET) device. Incorporation of a diamond superjunction (SJ) within the drain region of a SLCFET was previously predicted to improve breakdown ...
Shamima Afroz +13 more
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The Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES) device is being developed to enable a 2x increase in breakdown voltage of a Super-Lattice Castellated Field Effect Transistor (SLCFET) device. Incorporation of a diamond superjunction (SJ) within the drain region of a SLCFET was previously predicted to improve breakdown ...
Shamima Afroz +13 more
openaire +2 more sources
Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT [PDF]
IEEE Electron Device Letters, 2012 In this letter, we report Eoff-versus- Vce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dEoff/dVce >;0 in a transition region between purely unipolar and strongly bipolar device behaviors.
Friedhelm Bauer +4 more
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
The soaring demand for electric vehicles has made it evident that the Insulated Gate Bipolar Transistor (IGBT), a crucial component, needs to evolve. To minimize switching loss, we need to focus on optimizing the front-side design and enhancing the drift
Arthur Su +4 more
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The soaring demand for electric vehicles has made it evident that the Insulated Gate Bipolar Transistor (IGBT), a crucial component, needs to evolve. To minimize switching loss, we need to focus on optimizing the front-side design and enhancing the drift
Arthur Su +4 more
openaire +2 more sources
Design and Simulation of GaN Superjunction Transistors With 2-DEG Channels and Fin Channels [PDF]
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019 High-performance 2-D-electron-gas (2-DEG) channel and submicron fin-shaped channel have recently been demonstrated in vertical GaN power transistors.
Ming Xiao, Ruizhe Zhang, Dong Dong
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On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept [PDF]
IEEE Electron Device Letters, 2017 In this letter, we present the "anode-side" SuperJunction trench field stop+ IGBT concept with drift region SuperJunction pillars placed at the anode side of the structure rather than the cathode side. The extent of the pillars toward the cathode side is
Marina Antoniou +2 more
exaly +7 more sources