Results 61 to 70 of about 45,705 (145)

Superjunction MOSFET with dual built-in schottky diodes for fast reverse recovery: A numerical simulation study [PDF]

, 2019
A new superjunction MOSFET (SJ-MOSFET) architecture with dual built-in Schottky diodes is proposed and studied with the numerical TCAD simulations. This letter is based on silicon.
Jiang, Huaping, Wei, Jin, Li, Baikui, Zhou, Xianda, Chen, Kevin J., Zhang, Meng   +5 more
core   +1 more source

Theory of 3-D Superjunction MOSFET [PDF]

, 2019
The state-of-the-art superjunction (SJ) MOSFETs are based on the p-n pillar structures, arranged in a 2-D stripe geometry. This arrangement uses the superposition of the electric field components at the p-n junctions to create an enhanced depletion ...
Kang, H, Udrea, F, ,
core  

Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure. [PDF]

Micromachines (Basel), 2022
Li Y, Xu L, Guo Z, Sun H.
europepmc   +1 more source

Designs of 1.2 kV Rated Semi-Superjunction MOSFET on the 2D and 3D Planes for Practical Realization

Key Engineering Materials
This paper investigates the charge balancing and performance optimization of two 1.2 kV rated Semi-Superjunction (SSJ) MOSFETs. Beginning with a conventional double trench MOSFET, SJ trenches are imposed in 2D (within the X-Y plane unit cell) and in 3D ...
V. Kotagama, A. Renz, K. Melnyk, G. Baker, V. Shah, Marina Antoniou, P. Gammon   +6 more
semanticscholar   +1 more source

Static and Dynamic Figures of Merits (FOM) for Superjunction MOSFETs [PDF]

, 2019
The introduction of the superjunction has challenged the well-known limit of silicon. In spite of its widespread use, and despite its correct application in classical power MOSFETs, Baliga's figure of merit no longer can be used to give an accurate ...
Kang, H, Udrea, F, ,
core  

Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures. [PDF]

Micromachines (Basel), 2021
Chen CY, Lai YK, Lee KY, Huang CF, Huang SY.   +4 more
europepmc   +1 more source

Analytic Model of Specific ON-State Resistance for Superjunction MOSFETs With an Oxide Pillar [PDF]

, 2019
An analytical model for superjunction (SJ) MOSFETs having an oxide pillar between the n-pillar and the p-pillar is developed. Owing to the low permittivity of the oxide, a high electric field is sustained across the oxide.
Kang, H, Udrea, F, ,
core  

1 kV Self-Aligned Vertical GaN Superjunction Diode

IEEE Electron Device Letters
This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type nickel oxide (NiO).
Yunwei Ma, Matthew Porter, Yuan Qin, Joseph Spencer, Z. Du, M. Xiao, Yifan Wang, I. Kravchenko, Dayrl P. Briggs, Dale K Hensley, Florin Udrea, M. Tadjer, Han Wang, Yuhao Zhang   +13 more
semanticscholar   +1 more source

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Zhao D, Wang Y, Chen Y, Shao J, Fu Z, Duan B, Liu F, Li X, Li T, Yang X, Li M, Yang Y.   +11 more
europepmc   +1 more source

Improving the Reverse-Recovery Performance of Si SJ-MOSFETs with a Low-Voltage GaN HEMT in a Cascode Configuration [PDF]

The high reverse-recovery charge (Qrr) of the Si superjunction (SJ) mosfets' body diode leads to exacerbated switching loss and even destructive dynamic avalanche.
Zheng, Zheyang, Shu, Ji, Chen, Kevin J., Sun, Jiahui   +3 more
core   +1 more source