Results 31 to 40 of about 45,705 (145)

Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement

Доклады Белорусского государственного университета информатики и радиоэлектроники
This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen, Dao Dinh Ha, I. Yu. Lovshenko, V. R. Stempitsky   +3 more
doaj   +1 more source

The avalanche-mode superjunction LED [PDF]

, 2017
Avalanche-mode light-emitting diodes (AMLEDs) in silicon (Si) are potential light sources to enable monolithic optical links in standard CMOS technology, due to the large overlap of their electroluminescent (EL) spectra with the responsivity of Si ...
Hueting, Raymond Josephus Engelbart; id_orcid, Anne-Johan Annema, Steeneken, Peter G., Peter G. Steeneken, Hueting, R.J.E. (author), Steeneken, P.G., Schmitz, J., Agarwal, Vishal Vishal, Annema, Anne J., Annema, A.-J. (author), Jurriaan Schmitz, Dutta, S. (author), Hueting, Raymond Josephus Engelbart, Steeneken, P.G. (author), Schmitz, J. (author), Raymond J. E. Hueting, Vishal Agarwal, Dutta, Satadal, Agarwal, V., Dutta, S., Hueting, R.J.E., Agarwal, V. (author), Satadal Dutta, Schmitz, Jurriaan, Annema, A.-J.   +24 more
core   +2 more sources

A Review of Vertical Ga2O3 Diodes: From Fabrication to Performance Optimization and Future Outlooks

physica status solidi (b), Volume 262, Issue 8, August 2025.
Gallium oxide (Ga2O3) diodes are emerging as promising components in power electronics, offering an ultrawide bandgap, high breakdown electric field, and cost‐effective growth methods. This article reviews recent advancements in Ga2O3 diodes, highlighting their fabrication techniques, performance in high‐voltage applications, and ongoing research ...
Jose Manuel Taboada Vasquez, Xiaohang Li
wiley   +1 more source

Performance limits of 4H-SiC and 2H-GaN vertical superjunction (SJ) devices [PDF]

, 2018
December 2018School of EngineeringIn our performance limits projections of stripe-cell superjunction devices (STR-SJ), the specific on-resistances are 0.1 mΩ-cm2 and 1 mΩ-cm2 for 4H-SiC and 0.03 mΩ-cm2 and 0.3 mΩ-cm2 for 2H-GaN with blocking voltages of ...
Zhou, Xiang
core  

Lateral superjunction power MOSFETs [PDF]

, 2001
grantor: University of TorontoPower semiconductor devices play a crucial role in the efficient control of power used in electronic systems. There is a great need for the reduction of the power losses during switching and on-state conduction of ...
Amberetu, Mathew Atekwana
core   +2 more sources

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices

Advanced Electronic Materials, Volume 11, Issue 1, January 2025.
The nickel oxide (NiO) is investigated as a p‐type material to pair with n‐type (ultra‐)wide‐bandgap semiconductors to construct multidimensional power devices. A tunable acceptor concentration is revealed in NiO with breakdown field up to 6.3 MV cm−1.
Yunwei Ma, Yuan Qin, Matthew Porter, Joseph Spencer, Zhonghao Du, Ming Xiao, Boyan Wang, Yifan Wang, Alan G. Jacobs, Han Wang, Marko Tadjer, Yuhao Zhang   +11 more
wiley   +1 more source

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride

Advanced Materials Interfaces, Volume 11, Issue 33, November 25, 2024.
Trench‐filling epitaxy using chlorinated deposition gas is a promising approach to manufacture superjunction power devices using silicon carbide (4H‐SiC). This article demonstrates the importance of trench profile features, such as sidewall angle and width, on the filling behaviors by chlorinated chemical vapor deposition and how the gas composition ...
Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah   +8 more
wiley   +1 more source

Ultrafast Switching Superjunction MOSFETs for Single Phase PFC Applications [PDF]

, 2014
This paper presents a guide on characterizing state-of-the-art silicon superjunction (SJ) devices in the 600V range for single phase power factor correction (PFC) applications. The characterization procedure is based on a minimally inductive double pulse
Hernandez Botella, Juan Carlos, Lars Press Petersen, Juan C. Hernandez, Michael A. E. Andersen, Niels H. Petersen, Petersen, Lars Press, Andersen, Michael A. E., Petersen, Niels H.   +7 more
core   +1 more source

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor [PDF]

, 2019
This letter presents the dual implant superjunction (SJ) trench reverse-conducting (RC) insulated-gate bipolar transistor (IGBT) concept with two implanted SJ pillars in the drift region: one from the cathode side and another from the anode side.
Antoniou, M, Udrea, F, ,, Findlay, EM
core   +4 more sources

Superjunction IGBT with Conductivity Modulation Actively Controlled by Two Separate Driving Signals [PDF]

, 2020
A dual-gate superjunction insulated gate bipolar transistor (IGBT) (DG-SJ-IGBT) is proposed and studied with numerical TCAD simulations. The new structure utilizes the superjunction structure as a controlling port for the strength of conductivity ...
Wei, Jin, Chen, Kevin J., Zhang, Meng
core   +1 more source