Results 11 to 20 of about 45,705 (145)
Recent research progress of SiC superjunction devices [PDF]
机车电传动, 2023 Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power.
ZHANG Jinping +4 more
doaj +2 more sources
Superjunction Power Transistors With Interface Charges: A Case Study for GaN [PDF]
IEEE Journal of the Electron Devices Society, 2020 Recent progress in p-GaN trench-filling epitaxy has shown promise for the demonstration of GaN superjunction (SJ) devices. However, the presence of n-type interface charges at the regrowth interfaces has been widely observed. These interface charges pose
Yunwei Ma +4 more
doaj +2 more sources
(Ultra-)Wide-Bandgap Heterogeneous Superjunction: Design, Performance Limit, and Experimental Demonstration [PDF]
IEEE Transactions on Electron DevicesSuperjunction (SJ) breaks the performance limit of conventional power devices via multidimensional electrostatic engineering. Following a commercial success in Si, it has been recently demonstrated in wide bandgap (WBG) and ultra-WBG (UWBG ...
Yuan Qin +6 more
semanticscholar +3 more sources
Normally-Off Trench-Gated AlGaN/GaN Current Aperture Vertical Electron Transistor with Double Superjunction [PDF]
TechnologiesThis study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD ...
Jong-Uk Kim +3 more
doaj +2 more sources
Analysis of Superjunction MOSFET (CoolMOS™) Concept Limitations-Part I: Theory. [PDF]
Materials (Basel)The CoolMOS™ (Infineon Technologies AG, Munich, Germany) has been considered a device that alleviates high-voltage limitations of unipolar power devices, but although the theoretical considerations seem to confirm such a possibility, this expectation has
Lisik Z, Podgórski J.
europepmc +2 more sources
A unified model for vertical doped and polarized superjunction GaN devices [PDF]
, 2020 A unified model is proposed to characterize the breakdown voltage (BV) and specific on-resistance (R on, sp) for vertical doped superjunction (d-SJ) and polarized superjunction (p-SJ) GaN power devices.
Junji Cheng +9 more
core +1 more source
Energies, 2022 This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance ...
Edemar O. Prado +3 more
doaj +1 more source
Superjunction LDMOS With Dual Gate for Low On-Resistance and High Transconductance
IEEE Journal of the Electron Devices Society, 2020 In this paper, a novel bulk silicon lateral superjunction double diffused MOSFET (SJ-LDMOS) with dual gate (DG) is proposed and its mechanism is investigated by numerical TCAD simulations.
Zhen Cao, Licheng Jiao
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2022 This paper studies the short-circuit safe operating area (SCSOA) of the conventional field-stop (FS) IGBT and the superjunction (SJ) FS IGBT, based on 1200 V-rated samples, with the help of numerical electrothermal simulations.
Zhihao Wang +4 more
doaj +1 more source
Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor. [PDF]
Micromachines (Basel)This paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages.
Kang KM, Hu JW, Huang CF.
europepmc +2 more sources