Results 111 to 120 of about 613 (170)

A megawatt ultra-wide bandgap semiconductor module for pulsed power electronics. [PDF]

Nat Commun
Gong H, Yang X, Wang B, Zhang Z, Yuchi Q, Yang Z, Porter M, Cui H, Qin Y, Zhang R, Wang H, Dong D, Ye J, Lu GQ, Zhang Y.   +14 more
europepmc   +1 more source

Advances in High-Temperature Irradiation-Resistant Neutron Detectors. [PDF]

Sensors (Basel)
Wang C, Yu R, Xia W, Gong J.
europepmc   +1 more source

The Overview of Silicon Carbide Technology: Status, Challenges, Key Drivers, and Product Roadmap. [PDF]

Materials (Basel)
Kamiński M, Król K, Kwietniewski N, Myśliwiec M, Sochacki M, Stonio B, Kisiel R, Martychowiec A, Racka-Szmidt K, Werbowy A, Żelazko J, Niedzielski P, Szmidt J, Strójwąs A.   +13 more
europepmc   +1 more source

Stimulus-responsive smart bioactive glass composites for repair of complex tissue defects. [PDF]

Theranostics
Yang Y, Qiu Y, Lin C, Chen X, Zhao F.
europepmc   +1 more source

Power superjunction devices: an analytic model for breakdown voltage [PDF]

Microelectronics Journal, 2001
Abstract The paper presents an analytic two-dimensional (2D) model for breakdown voltage of recently proposed superjunction structures. The 2D model is able to correctly estimate electric field and breakdown voltage giving an insight into superjunction devices behavior.
Ettore Napoli
exaly   +3 more sources

Theory of Superjunction Devices [PDF]

, 2020
Since the first ideal specific resistance model by Fujihira in 1997 and the first commercial superjunction MOSFET by Infineon technology in 1998, the technology and the understanding of superjunction devices have been gradually progressed. Although Fujihira’s ideal model was developed to estimate the specific on-state resistance at a given cell pitch ...
openaire   +3 more sources

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Novel strained superjunction VDMOS

Superlattices and Microstructures, 2015
Abstract In this paper, we have proposed novel strained superjunction (s-SJ) vertical double diffused MOS (VDMOS). Through channel engineering, we have introduced strain effects in s-SJ device using thin separate p-type silicon–germanium (p-SiGe) layer over silicon p-pillar.
Alok Naugarhiya, Shashank Dubey, Pravin N Kondekar   +2 more
exaly   +2 more sources

The lateral superjunction PSOI LIGBT and LDMOSFET [PDF]

CAS 2012 (International Semiconductor Conference), 2012
This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in both structures but also contributes to the on-state current in the LIGBT.
Marina Antoniou, Elizabeth Kho Ching Tee, Steven John Pilkington, Deb Kumar Pal, Florin Udrea, Alexander Dietrich Hoelke   +5 more
openaire   +2 more sources

SPICE modelling of the superjunction IGBT [PDF]

9th International Seminar on Power Semiconductors (ISPS 2008), 2008
This paper presents a SPICE model of the Superjunction Insulated Gate Bipolar Transistor (SJIGBT). SPICE simulation results are in good agreement with the DESSIS simulation results under DC conditions. This model consists of an intrinsic MOSFET and a parallel combination of a wide and a narrow base pnp BJTs. A parasitic JFET is also included to account
M. Antoniou, F. Udrea, F. Bauer
openaire   +2 more sources