Results 131 to 140 of about 613 (170)

A Superjunction U-MOSFET With SIPOS Pillar Breaking Superjunction Silicon Limit by TCAD Simulation Study

IEEE Electron Device Letters, 2017
A novel superjunction (SJ) vertical UMOSFET with semi-insulating POly-crystalline silicon pillar (SIPOS SJ-UMOS) is proposed and its mechanism is investigated by TCAD simulations. In the off-state, the reshape effect of SIPOS pillars enhances the vertical electric field strength and weakens the lateral field component, which increases the breakdown ...
Zhen Cao, Baoxing Duan, Tongtong Shi, Song Yuan, Yintang Yang   +4 more
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Study of reliability in superjunction power VDMOSFET

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012
Comparing with CoolMOSTM, a new deep trench structure of superjunction power VDMOS has been developed in HHNEC. In this paper, we have studied main reliability failure mechanisms subjected to HTRB (High Temperature Reverse Bias). Positive improvement actions from both process and package assembly were showed.
Zeng-Yi Fan, Zheng-Yu Chu, Jing Luo, Gang Cao, Scott Liao   +4 more
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A Superjunction LDMOS with Steps Buried Oxide

Journal of Electronic Materials, 2018
A superjunction (SJ) LDMOS with steps buried oxide (SBOX) is proposed in this paper. The SJ LDMOS with SBOX designed is based on the Enhanced Dielectric Field (ENDIF). The drift region is divided into three parts according to the depths of the SBOX, which gradually increases from source to drain in order to optimize the drift region charge ...
Lijuan Wu, Hang Yang, Yinyan Zhang, Yue Song, Na Yuan, Bing Lei, Yiqing Wu   +6 more
openaire   +1 more source

Material Limit of Power Devices—Applied to Asymmetric 2-D Superjunction MOSFET [PDF]

IEEE Transactions on Electron Devices, 2018
In spite of the reporting of several mathematical approaches dealing with the behavior of the superjunction MOSFET's specific resistance, a study for the asymmetrical pillar (when the width of the n-pillar and the p-pillar are not the same at a given ...
H Kang, F Udrea
exaly   +1 more source

Theory of 3-D Superjunction MOSFET

IEEE Transactions on Electron Devices, 2019
The state-of-the-art superjunction (SJ) MOSFETs are based on the p-n pillar structures, arranged in a 2-D stripe geometry. This arrangement uses the superposition of the electric field components at the p-n junctions to create an enhanced depletion volume for higher breakdown capability.
H. Kang, F. Udrea
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Theory of Semiconductor Superjunction Devices

Japanese Journal of Applied Physics, 1997
A new theory of semiconductor devices, called “semiconductor superjunction (SJ) theory”, is presented. To overcome the trade-off relationship between breakdown voltage and on-resistance of conventional semiconductor devices, SJ devices utilize a number of alternately stacked, p- and n-type, heavily doped, thin semiconductor layers.
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Progression of Superjunction Power MOSFET Devices

IECON 2007 - 33rd Annual Conference of the IEEE Industrial Electronics Society, 2007
p-n column superjunction (SJ) MOSFET power devices are highly recognized for their higher blocking capability and lower specific on-state resistance. However, in practice, the performance of SJ devices is handicapped with difficulties in formation of perfect charge-balanced p-n columns due to the limitation of current process technology, especially for
Yu Chen, Yung C. Liang, Ganesh S. Samudra, Hanhua Feng   +3 more
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A Review of Superjunction Vertical Diffused MOSFET

IETE Technical Review, 2012
Superjunction has arguably been the most creative and important concept in power device field. Superjunction vertical diffused MOSFET (SJ VDMOS) has been commercialized and the research effort to l...
Jian Chen, Weifeng Sun, Long Zhang, Jing Zhu, Yanzhang Lin   +4 more
openaire   +1 more source

A Partial Narrow Mesa Superjunction IGBT

Advanced Materials Research, 2013
APartial Narrow Mesa (PNW)SJ IGBT structure is proposed in this paper.With a non-connected SJ implemented inthe PNW IGBT,the proposed structure combines the injection enhancement effectsfrom bothPNW and SJ structure,which improvesthecarrier concentrationnear the cathode sideand reducesthe on-state voltage drop.Meanwhile, the implementationof theSJ ...
Bo Liu, Xin Nan Lin, Frank X.C. Jiang, Jin He   +3 more
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Robustness of GaN vertical superjunction HEMT

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013
We have examined the robustness of the novel enhancement-mode GaN vertical superjunction HEMT using numerical simulations, which has been designed previously and projected to have best Ron, sp of 4.2 mQ-cm2 and BV of 12.4kV, and compared it with a GaN vertical HEMT with conventional drift region.
null Zhongda Li, T. Paul Chow
openaire   +1 more source