Results 141 to 150 of about 613 (170)
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Current density and Gate Ringing in Superjunction MOSFETs
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020It is common knowledge that the gate ringing of a power MOSFET is proportional to the dV/dt during the dynamic switching. In this study we show a particular situation when the gate ringing can be reduced significantly with a faster dV/dt. The faster dV/dt occurs when the driving current in the superjunction MOSFET increases, leading to faster charging ...
H. Kang, F. Udrea
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Experimental investigation of 650V superjunction IGBTs
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016650V superjunction IGBTs have been fabricated. Depending on IGBT structures as well as process conditions, competitive trade-off performances have been observed. Vcesat of 1.4V and tf around 35 ns at the collector current density of 250A/cm2 were obtained with the prototype of superjunction FS IGBT. The superjunction NPT IGBT also shows tf of 35ns with
Kwang-Hoon Oh +6 more
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COSS hysteresis in advanced superjunction MOSFETs
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016In this work, a Sawyer-Tower circuit is employed to characterize the output capacitance (COSS) of advanced superjunction MOSFETs. It is shown that some of the most advanced superjunction MOSFETs exhibit significant hysteresis in their output capacitance which leads to unrecoverable power loss.
J.B. Fedison, M.J. Harrison
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A pn-Coupled Superjunction IGBT for High Switching Speed
2019 IEEE 13th International Conference on ASIC (ASICON), 2019In this paper, a pn-coupled superjunction(SJ) IGBT is proposed. It is a four-terminal device composed of a n-IGBT and a p-IGBT which couples with each other via the SJ pillar. Simulations on its fabrication process and electrical performances are carried out via Sentaurus TCAD.
Lei Liu +4 more
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Improved theoretical minimum of the specific on-resistance of a superjunction
Semiconductor Science and Technology, 2020Abstract We derive simple closed-form solutions for the optimum pillar parameters—length L opt, width 2W opt and doping N opt of a superjunction. The parameters yield the minimum specific on-resistance, R ONSP, for a target breakdown voltage, V BR ...
K Akshay, Shreepad Karmalkar
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Recent developments in superjunction power devices
Journal of SemiconductorsAbstract Superjunction (SJ) is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a "milestone" in power MOS. Its balanced charge field modulation mechanism breaks through the strong dependency between the doping concentration in the drift region and the breakdown voltage V
Chao Ma +4 more
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Novel Accumulation Mode Superjunction Device With Extended Superjunction Gate
IEEE Transactions on Electron Devices, 2022Lijuan Wu +4 more
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Superjunction LDMOS on thick-SOI technology for RF applications
Microelectronics Journal, 2008The feasibility of applying the superjunction (SJ) concept to a thick-SOI LDMOS transistor for RF base station applications is studied in this paper. The electrical performances of SJ thick-SOI LDMOS transistors are compared with those of the conventional RF LDMOS counterparts through an extensive 3D simulation work in terms of transconductance (g"m ...
Ignasi Cortés +4 more
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Optimization and New Structure of Superjunction With Isolator Layer
IEEE Transactions on Electron Devices, 2017An optimization theory is developed for the balanced symmetric superjunction with the interface isolator layer (I-SJ) in this paper. The theory includes two parts: the electric field calculation by the Taylor series method; the design formulas by the minimum specific on-resistance $R_{\mathrm{\scriptscriptstyle ON},\mathrm {min}}$ optimization ...
Wentong Zhang +5 more
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Simulated superior performances of semiconductor superjunction devices
Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 2002The performances of majority- and minority-carrier semiconductor superjunction devices are examined and compared to that of standard devices in terms of forward current density, reverse leakage current, and switching charge. Based on two-dimensional simulations and theoretical calculations, it is shown that two orders of magnitude improvement in ...
T. Fujihira, Y. Miyasaka
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