Results 151 to 160 of about 613 (170)
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Development of SiC Superjunction MOSFET: A Review

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2023
Yuhan Duan   +3 more
openaire   +1 more source

Superjunction IGBT with split carrier storage layer

Semiconductor Science and Technology
Abstract The insulated gate bipolar transistor (IGBT) is crucial in high-voltage applications due to its characteristics, like breakdown voltage (BV) and on-state voltage V CE(sat). However, its slower turn-off time, attributed to hole mobility, restricts its frequency range. Techniques such as the carrier storage layer
Tae Young Yoon   +3 more
openaire   +1 more source

A feasible superjunction device and process technology

30th Annual Conference of IEEE Industrial Electronics Society, 2004. IECON 2004, 2005
null Yin Yang   +3 more
openaire   +1 more source

First Demonstration of Vertical Superjunction Diode in GaN

2022 International Electron Devices Meeting (IEDM), 2022
Ming Xiao   +14 more
openaire   +1 more source

Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMT

IEEE Transactions on Electron Devices, 2013
Zhongda Li, T Paul Chow
exaly  

Proposal of 1.2kV thin wafer Semi-SuperJunction IGBT (SSJ-IGBT) surpassing Full SuperJunction IGBT

Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials
Masahiro Tanaka   +2 more
openaire   +1 more source

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