Results 121 to 130 of about 613 (170)
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Application of workfunction engineering in vertical superjunction devices
Superlattices and Microstructures, 2017Abstract A novel device superjunction vertical single diffused metal oxide semiconductor (SJ VSDMOS) employing work function engineering has been proposed in this paper. Electron and hole plasma formation take place due to the work function difference at the metal-semiconductor contact.
Payal Nautiyal +2 more
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, 2014 The power semiconductor devices control the energy flow in virtually every electric and electronic system. Most common applications are: automotive, traction, consumer electronics, air conditioning, electric engines. The improvement in power devices results in improved power management circuits with increased efficiency. Reduced environmental pollution,
NAPOLI, ETTORE, Ettore Napoli
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Superjunction Power Devices, History, Development, and Future Prospects [PDF]
IEEE Transactions on Electron Devices, 2017 Superjunction has arguably been the most creative and important concept in the power device field since the introduction of the insulated gate bipolar transistor (IGBT) in the 1980s.
F Udrea, Gerald Deboy
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Charge Sheet Superjunction (CSSJ) - A new superjunction concept
2007 International Workshop on Physics of Semiconductor Devices, 2007A new superjunction concept called Charge Sheet Superjunction (CSSJ) is proposed based on simulation studies; a fabrication procedure for practical realization of this concept is also suggested. The CSSJ structure is obtained by replacing the p-pillar of a conventional Superjunction (SJ) by a negative charge sheet.
S. Srikanth, S. Karmalkar
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Design and Simulation of GaN Superjunction Transistors With 2-DEG Channels and Fin Channels [PDF]
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019 High-performance 2-D-electron-gas (2-DEG) channel and submicron fin-shaped channel have recently been demonstrated in vertical GaN power transistors.
Ming Xiao, Ruizhe Zhang, Dong Dong
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200-V Lateral Superjunction LIGBT on Partial SOI [PDF]
IEEE Electron Device Letters, 2012 This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process.
Wan Azlan Wan Zainal Abidin +2 more
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IEEE Electron Device Letters, 2010
In this letter, we propose a new device, the Semi-Superjunction (SJ) (Semi-SJ) insulated-gate bipolar transistor (IGBT) (Semi-SJ IGBT). The device offers significant improvement in the on state and switching tradeoff compared with the state-of-the-art FieldStop Trench IGBT (FS IGBT).
Marina Antoniou +3 more
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In this letter, we propose a new device, the Semi-Superjunction (SJ) (Semi-SJ) insulated-gate bipolar transistor (IGBT) (Semi-SJ IGBT). The device offers significant improvement in the on state and switching tradeoff compared with the state-of-the-art FieldStop Trench IGBT (FS IGBT).
Marina Antoniou +3 more
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Superjunction by Wafer Direct Bonding
Japanese Journal of Applied Physics, 1995A pn-junction having a very abrupt impurity profile, called a “superjunction” in this study, was realized by wafer direct bonding (WDB) and low-temperature annealing. To eliminate voids during the low-temperature annealing, a wafer with trenches on the surface was used.
Hitoshi Yamaguchi +3 more
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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019
The Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES) device is being developed to enable a 2x increase in breakdown voltage of a Super-Lattice Castellated Field Effect Transistor (SLCFET) device. Incorporation of a diamond superjunction (SJ) within the drain region of a SLCFET was previously predicted to improve breakdown ...
Shamima Afroz +13 more
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The Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES) device is being developed to enable a 2x increase in breakdown voltage of a Super-Lattice Castellated Field Effect Transistor (SLCFET) device. Incorporation of a diamond superjunction (SJ) within the drain region of a SLCFET was previously predicted to improve breakdown ...
Shamima Afroz +13 more
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JFET Depletion in SuperJunction Devices
2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008SuperJunction theory predicts that specific on- resistance improves as the widths of the N- and P-type regions in the drift region are reduced. In this paper, it is shown that there is a practical limit to improving on-resistance by shrinking these widths, due to JFET depletion of the conducting regions.
Don Disney, Gary Dolny
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